Self-heating of ultra-scaled system-on-chips is becoming a severe challenge in the electronic industry, which demands a fast on-chip heat-spreading solution. Graphene is predicted to be a potential heat spreader due to its high thermal conductivity. However, low cross-plane thermal conductivity of graphene with metal is a serious concern.  This work, for the first time, proposes and demonstrates a unique orbital overlap engineering solution to enhance the phonon coupling of graphene with a hot spot source. 

Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders

We reveal, for the first time, a comprehensive physical insight into high-field electrical breakdown in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. Electrical, optical, and electro-optic properties of 2D TMD FETs are extensively analyzed in the FETs operated in the non-destructive breakdown regime. Careful investigations reveal that hot carrier electroluminescence (EL) observed in the devices operated at the verge of breakdown can have two distinct origins.

Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs

In this work, for the first time, we report an electric-field coupled molecular dynamics to investigate the impact of electric-field and Joule’s heating at an atomic level in 2D-monolayer MoS2. The results indicate a breakdown vulnerability in zigzag direction at a lower electric-field than in armchair direction under similar conditions. Moreover, it is observed that a high-voltage ramp rate (dV/dt) and Joule’s heating enhance tensile-strain of Mo-S bonds which further lowers breakdown field of MoS2.

P71.TX -Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs

We report distinct breakdown mechanisms in CVD monolayer MoS2 FET devices for the first time mediated by either voltage or currents in devices. A detailed analysis of the breakdown physics explains the operational effects led shortcomings expected in downscaled devices. Operating short channel TMDs devices would be tricky owing to the dipole moment making it imperative to address the piezoelectric response related drifts in search of reliable performance.

Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs

8B (Packaging & 2.5/3D Assembly)

technical paper

#### Welcome to the 62nd IEEE International Reliability Physics Symposium (IRPS)! 
**The 2024 IEEE International Reliability Physics Symposium (IRPS) was held in Dallas, Texas from April 14 to 18, 2024.** 

[![](https://assets.underline.io/uploads/markdown_image/1/image/9cc005f94b4ba4a81918eb49e0a51057.png)](https://underline.io/events/446/reception)
[![](https://assets.underline.io/uploads/markdown_image/1/image/acae953ba70ae2a57eed7b0250d6dd7d.png)](https://www.irps.org/)
[![](https://assets.underline.io/uploads/markdown_image/1/image/e1806748f2fc69f825e596872a7afdfd.png)](https://drive.google.com/drive/folders/1SmhpLZD9swYxrfP0TYF6327QTIciy3tV?usp=drive_link)
 

**[IRPS 2024 eGuide](https://drive.google.com/file/d/1DHxkWbafodK_D2HlDi7lwRK7KatgBgBD/view?usp=drive_link)** 
Please save the zip file locally and click the "start.pdf" to view the file. 
 
**IRPS 2024 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2024, scheduled to take place from April 14-18, 2024, in Dallas, TX. 
Over its 62-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2024 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics beyond CMOS device, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on neuromorphic computing, dielectric breakdown in leading edge devices, and GaN technology will be provided on Monday after the tutorials.

The IRPS 2024 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Prof. Shinichi Takagi from The University of Tokyo and Dr. Su Jin Ahn from Samsung on Tuesday, Dr. Rajeev Malik from IBM on Wednesday, and Dr. Sameer Pendharkar from Texas Instruments on Thursday. The technical program, organized into three parallel tracks, consists of contributed and seventeen invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2023 and the International Integrated Reliability Workshop (IIRW) 2023, will be given in the technical program. 

Tuesday evening will host ten workshops, offering an opportunity for in-depth, face-to-face discussions on emerging reliability challenges, including the three IRPS 2024 focus topics. A poster session will be held in the Austin Ranch outside the symposium building on Wednesday evening. Both events are sure to be lively. The IRPS 2024 and the International ESD Workshop (IEW) will be co-hosted with IEW registrants participating in both IRPS and IEW programs.

The IRPS 2024 will adopt a hybrid conference style, allowing virtual access to live oral presentations hosted by the Underline. Real-time streaming of all technical events (excluding Workshops and Posters) will be available in the US Central Timezone, providing virtual attendees with Q&A opportunities. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees after the symposium. All authors will be presenting in person.

Finally, I would like to extend my extreme gratitude to our patrons, exhibitors, and all participants for their invaluable support, which makes IRPS successful. 

Please enjoy the IRPS 2024!

Koji Eriguchi, General Chair 
of 2024 IRPS Management Committee
 
**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

You need to log in with the email address you registered with. Access credentials have been sent to your email. 

Please be sure to check your spam and other email folders if you do not see an email confirmation right away.

Please log in to explore this event.

It looks like you are not registered for this event. 

To access the site please register [**here**](https://www.irps.org/registration-fees). 

Please register!

IRPS 2024 Main Conference

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

Aadil Bashir Dar

4

SHORT BIO

Presentations

Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders

Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs

P71.TX -Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs

Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES