In this talk, we first report the roadmap and development of advanced perpendicular magnetic tunnel junctions based on low-damping magnetic materials with crystalline anisotropy that can be scaled down to sub-3-nm diameter with 10 years’ retention time [1]. Then, we will present the perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields. Traditional voltage-controlled magnetic anisotropy only linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we propose and demonstrate a bipolar electric field effect switching of 100-nm p-MTJs through voltage-controlled exchange coupling (VCEC) [2]. The switching current density, ~1.1×105 A/cm2, is one order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that electric field induces a ferromagnetic-antiferromagnetic exchange coupling transition and generates a field-like interlayer exchange coupling torque, which cause the bidirectional magnetization switching. We will further report our recent results to switch the p-MTJs using the interplay of SOT and VCEC, which lowers the VCEC switching current density to ~5×103 A/cm2[3]. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications. This technology can be used directly for the future spin-orbit-torque (SOT) MRAM [3] and spin logic devices [4]. 
**References** [1] D. Zhang, et al, Phys. Rev. Applied, (2018) vol. 9, 044028 
[2] D. Zhang, et al, Nano Letters (2022), doi.org/10.1021/acs.nanolett.1c03395 
[3] B. Zink, et al, Advanced Electronic Materials, (2022), DOI: 10.1002/aelm.202200382 
[4] M. Mankalale, et al, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 3 (2017) 27-36; 10.1109/JXCDC.2017.2690629 

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Perpendicular Magnetic Tunnel Junctions with Crystalline Anisotropy and Energy efficient Switching of Synthetic Antiferromagnet pMTJs by voltage

Magnetic random access memory (MRAM) is a promising candidate for beyond-CMOS memory and logic technologies and has been developed for commercial purposes in recent years (1). The key building block of commercial MRAM is magnetic tunnel junction (MTJ), which is operated through either spin transfer torque (STT) or spin-orbit torque (SOT). STT-based MRAM benefits from higher cell density but suffers from reliability and energy-efficiency due to the current flow through the MTJ whereas SOT-based MRAM has superior reliability, endurance, and faster switching times (2). For realizing the ultralow switching current density and ultrafast switching MRAM cell, two or more driving forces are normally employed to switch MTJs. One acts as the principal switching mechanism and the other serves to assist in switching. For example, ultrafast switching speed of ~ 0.27 ns has been reported in SOT switching of perpendicular MTJs (p-MTJs) assisted with STT and voltage-controlled magnetic anisotropy (VCMA), however, the key challenge is still large switching current densities (Jc) ~ 2.0×108 A/cm2 for SOT and ~ 2.3×106 A/cm2 for STT (3).
Voltage controlled exchange coupling (VCEC) occurs in perpendicular MTJs (p-MTJs) with synthetic antiferromagnetic (SAF) free layers and can realize bidirectional switching at switching current densities as low as 1 x 105 A/cm2 (4). In this work, we designed and fabricated the p-MTJ stacks with SAF free layers on bi-layered spin Hall channels (Ta/Pd). The p-MTJ stacks were patterned into 150-nm pillars, and MTJ devices are switched through combination of SOT and VCEC effects, as illustrated in Fig. 1(a). Bidirectional switching of p-MTJs were obtained with current densities as low as 3×103 A/cm2 for VCEC and 6.8×107 A/cm2 for SOT, as shown in Fig. 1(b), where the VCEC switching current density is two orders of magnitude lower than the reported value for VCEC-only switching [4]. Furthermore, by studying the contribution of SOT and VCEC for MTJ switching, it is found that SOT plays a crucial role for ultralow-energy VCEC bidirectional magnetization switching. 

**References:** 
(1) J.-P. Wang et al, DAC '17: Proceedings of the 54th Annual Design Automation Conference 16, pp. 1-6 (2017). 
(2) Y. C. Liao et al, IEEE J. Explor. Solid-State Computat. 6, pp. 9-17 (2020). 
(3) E. Grimaldi et al, Nat. Nanotechnol. 15, pp. 111-117 (2020). 
(4) D. Zhang et al, Nano Lett., 22, pp. 622-629 (2022). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/cc395ac5760d53440cf052a95d03652a.png)

Ultra low current density switching via voltage

The generation of phonons by ferromagnetic resonance in magnetic thin films and subsequent propagation of phonons into the substrate is an effect known as phonon pumping [1-2]. This effect can be utilized in spintronic devices that rely on magnetoelastic coupling for information transfer. The phonon pumping effect is most efficient in the perpendicular configuration, and can therefore be suitably integrated in devices composed of PMA materials. Here we demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]n multilayers (n = 6, 11, 15, and 20) with large magnetostriction and perpendicular anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to standing wave phonons across the multilayer. The strength of this effect is strongly dependent on temperature—approximately a factor of 4 larger at 10 K compared to room temperature (see figure). Lastly, we demonstrate that the damping enhancement coincides with a shift in the ferromagnetic resonance field, and further that it is a complementary effect that can be predicted from the resonant damping enhancements. We emphasize that [Co/Pd]n multilayers are an ideal platform for studying this effect due to their large magnetostriction and perpendicular anisotropy. Importantly, the PMA does not show significant dependence on multilayer thickness, so devices can be engineered that have phonon pumping resonances at zero applied field. This work was supported by SMART, a center funded by nCORE, a Semiconductor Research Corporation program sponsored by NIST.
References [1] S. Streib, H. Keshtgar, and G. E. W. Bauer, Damping of Magnetization Dynamics by Phonon Pumping, Phys. Rev. Lett. 121, p.027202 (2018).
[2] K. An, A. N. Litvinenko, R. Kohno, A. A. Fuad, V. V. Naletov, L. Vila, U. Ebels, G. de Loubens, H. Hurdequint, N. Beaulieu, J. Ben Youssef, N. Vukadinovic, G. E. W. Bauer, A. N. Slavin, V. S. Tiberkevich, and O. Klein, Coherent long-range transfer of angular momentum between magnon Kittel modes by phonons, Phys. Rev. B 101, p.060407(R) (2020).

![](https://assets.underline.io/uploads/markdown_image/1/image/3704a35d4e1ee87bd33e2993e6fa34b3.jpg)

Ferromagnetic resonance linewidth enhancements due to phonon pumping at different temperatures for the [Co/Pd]11 multilayer. Linewidth contributions from Gilbert damping and inhomogeneous broadening are excluded. Vertical dashed lines at 23 and 46 GHz show positions of phonon pumping resonances.

Anomalous Temperature Dependence of Phonon Pumping by Ferromagnetic Resonance in [Co/Pd]n Multilayers with Perpendicular Anisotropy

Spin-orbit torque (SOT) switching of perpendicular magnetic tunnel junctions (p-MTJs) has been attracted considerable interest recently for spin memory applications due to the fast magnetization switching speed (1~4). Recently, the synthetic antiferromagnetic (SAF) free layer provides lots of benefits for MTJ performance, such as very small stray field, ultrafast switching speed, and large thermal stability (5~6). In this presentation, we will show our experimental results about the SOT switching of the SAF free layer via the bilayer spin Hall channel. The SAF stack of the [Co/Pd]/Co/Ru/Ta/CFB with perpendicular magnetic anisotropy (PMA) was developed on Ta/Pd seed layers which also serve as the spin Hall channel for spin-orbit torque (SOT) switching. First of all, the antiferromagnetic coupling behavior of the SAF layers was verified under a sweeping magnetic field with VSM and AHE measurements. Then, the Second Harmonic Hall measurement was conducted to characterize the SOTs generated by the Ta/Pd bilayers. The results are plotted in Fig. 1(a). We can find that the spin-torque efficiency of the Ta/Pd bilayer increases as increasing of the thickness of the Pd layer. With the thinner Pd layer, the spin torque efficiency cancels each other because of the opposite spin Hall angle. When the thickness of the Pd layer increases, the spin torque efficacy is dominant by the Pd layer. Furthermore, the current switching of the SAF layers with SOT was then demonstrated as shown in Fig. 1(b). In addition, magnetic field-free SOT switching of the SAF layer with PMA was also realized at a certain configuration of the Ta/Pd bilayer structure.

**References:**

 1. I. M. Miron, K. Garello, G. Gaudin, P.-J. Zermatten, M. V. Costache, S. Auffret, S. Bandiera, B. Rodmacq, A. Schuhl and P. Gambardella, Nature 476, 189–193 (2011) 2. L. Liu, C. F. Pai, Y. Li, H. W. Tseng, D. C. Ralph, R. A. Buhrman, Science 336, 555-558 (2012) 3. A. Manchon, J. Zelezny, I. M. Miron, T. Jungwirth, J. Sinova, A. Thiaville, et al., Rev. Mod. Phys. 91, 035004 (2019). 4. E. Grimaldi, V. Krizakova, G. Sala, F. Yasin, S. Couet, G. S. Kar, K. Garello, and P. Gambardella, Nat. Nanotech. 15, 111–117(2020) 5. C. Yoshida, T. Takenaga, Y. Iba, Y. Yamazaki, H. Uehara, H. Noshiro, K. Tsunoda, A. Hatada, M. Nakabayashi, A. Takahashi, M. Aoki, and T. Sugii, IEDM13-68, 3.4.1 6. A. Bergman, B. Skubic, J. Hellsvik, L. Nordström, A. Delin, and O. Eriksson, Phys. Rev. B 83, 224429 (2011)

**Images:**

![](https://assets.underline.io/uploads/markdown_image/1/image/92188869b59cbf4de9d50735a1fa44b6.jpg)
FIG. 1. (a) the damping-like spin Hall efficiency (τDL) as a function of the thickness of the Pd layer (tPd). (b) SOT switching of SAF layer through the bilayer spin Hall channel.

 Spin-orbit torque switching of synthetic antiferromagnetic layer by metallic bilayers with opposite spin Hall angles

In recent years, magnon-phonon coupling has attracted renewed interest[1] both from the physics and technological perspectives owing to its efficient conversion of energy between magnon and phonon. In particular, the magneto-acoustic resonance, has become a focal point, partly owing to the possibility for rapid switching, which is significant for applications in cloud storage, advanced spin memory, logic, and other spintronic devices. An ultrafast optical approach, specifically femtosecond laser pulses, is a powerful tool to initiate the coupling and its successive detection. The laser pulse simultaneously generates the phonon and magnon, through thermal expansion and fast demagnetization. The thermal expansion produces a local strain or phonon, whose frequency is tunable by both the material composition and geometry. At the same time, the fast demagnetization excites the magnetization out of equilibrium and creates magnons. The femtosecond time scale of the laser pulse benefits the detection of both magnon and phonon, as their dynamics endure longer than the pulse time scale. However, research reported in the literature mostly launch strain electrically in piezoelectric materials, which leads to a different phonon propagation direction. In addition, the literature study of the coupling is confined to materials unsuitable for spintronic applications. These materials, limit the resonance frequency or require low temperature for the magnetoacoustic resonance. To date, direct demonstration of magnon-phonon coupling remains elusive in materials with high perpendicular magnetic anisotropy, which are capable of achieving ultrahigh frequency resonance at room temperature. Here, we report an extremely high frequency magnetoacoustic resonance up to 60 GHz, originating from magnon-phonon coupling in [Co/Pd]n multilayer with perpendicular magnetic anisotropy. Our theory uncovers the physics of resonance in a coupled system, and is based on the equation of motion for both magnon and phonon, with coupling introduced in the Hamiltonian through the magnetostrictive energy. Owing to the magnon and phonon possessing the same symmetry, the physics at resonance presents an enhanced wave envelope in the time domain, an anticrossing in the frequency domain, and significant hybridization of both magnons and phonons. When the frequencies of magnon and phonon approach each other in the resonance regime, these two modes hybridize into a quasiparticle contributed by both magnon and phonon. This hybridization generates an anticrossing in the dispersion with a frequency gap Δf in Fig. (a), which is quantitatively determined by the coupling coefficient in our model and consistent with our experiment. The amplitudes of both modes increase in the hybridization regime in Fig. (b): the original phonon mode is now highly visible owing to the admixed magnon, the original magnon mode is enhanced owing to the pumping from phonons. In addition, the resonance in the time domain (an enhanced wave envelope) indicates the strain substantially influences the spin dynamics at an ultrafast picosecond time scale. All these physical features are demonstrated in both ultrafast optical measurements and micromagnetic simulations. The ultrafast optical measurements [3] of the time-resolved magneto-optical Kerr effect (TR-MOKE) and time-domain thermoreflectance (TDTR) directly observe the dynamics of magnon and phonon. The frequency and the amplitude of TR-MOKE and TDTR signals are consistent with the modeling, which indicates the transition of the system from hybridization to de-hybridization, controlled by the external applied field. The simulations apply the properties of the [Co/Pd]n multilayers, whose structures are optimized to achieve a maximum resonance frequency allowable with current experimental settings. All the [Co/Pd]n multilayers samples were prepared in an ultra-high vacuum magnetron sputtering system. With an appropriate strain, the simulation predicts that the system is able to undergo a large-angle magnetization precession and achieve a rapid switching. In summary, our work demonstrates an efficient energy transfer among magnon and phonon at an ultrafast picosecond scale, which paves a potential pathway for enabling an ultrahigh speed strain-assisted magnetization switching in a technologically relevant magnetic system.

**References:**

[1] A. Kirilyuk, A. V. Kimel, T. Rasing, Ultrafast optical manipulation of magnetic order. Rev. Mod. Phys. 82, 2731–2784 (2010). [2] D.-L. Zhang, J. Zhu, T. Qu, D. M. Lattery, R. H. Victora, X. Wang, J.-P. Wang, High frequency magnetoacoustic resonance through strain-spin coupling in perpendicular magnetic multilayers. Sci. Adv. 6, eabb4607 (2020) [3] D. B. Huang, D. Lattery, X. Wang, Materials Engineering Enabled by Time-Resolved Magneto-Optical Kerr Effect for Spintronic Applications, ACS Appl. Electron. Mater., 2020 (appears online).

**Images:**

![](https://assets.underline.io/uploads/markdown_image/1/image/da1d7a3d7e4d08d14d19d9c77f1710f1.jpg)
The frequency of the [Co(0.8 nm)/Pd(1.5 nm)]11 multilayers as a function of Hext. Two frequencies of spin precession (mode 1, open black circles; mode 2, open red diamonds) are derived by fitting the experimental data of TR-MOKE. The figure also includes the frequency of acoustic waves measured from TDTR (blue stars). The anticrossing point of mode 1 and mode 2 occur at the resonance field (Hext ≈ 21 kOe), where the frequencies of modes 1 and 2 split and open a gap Δf. We assign the strain mode as the one with field-independent frequencies that are nearly identical to the acoustic wave frequencies from TDTR. The frequency of the FMR mode increases linearly with Hext.

![](https://assets.underline.io/uploads/markdown_image/1/image/33d75b34edaa03dce17f237aff203cd9.jpg)
The individual Mz amplitudes of modes 1 and 2 as a function of Hext for the [Co(0.8nm)/Pd(1.5nm)]11 multilayers. There exists an apparent amplification of both modes due to the coupling between these two modes near the anticrossing point. (Figure is taken from Ref. 2.)

 High-frequency magnetoacoustic resonance through strain-spin coupling in perpendicular magnetic multilayers INVITED

Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultra-high density and ultralow energy-consumption spintronic devices (1~5). In this presentation, we will report the experimental investigation on the structure, thermal stability, and magnetic properties of FePd thin films seeded by a Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (Ku ~ 10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a Ku ~ 6.8 Merg/cm3 can be obtained with the annealing temperature of 500 oC. In addition, the damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for the as-deposited FePd sample and from 0.006 to 0.012 for the FePd sample annealed at 400 oC as the testing temperature changes from 25 oC to 150 oC (6). These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices.

**References:**

 1. M. Weisheit, S. Fähler, A. Marty, Y. Souche, C. Poinsignon, and D. Givord, Science 315, 349-351 (2007). 2. S. Iihama, A. Sakuma, H. Naganuma, M. Oogane, T. Miyazaki, S. Mizukami, and Y. Ando, Appl. Phys. Lett. 105, 142403 (2014). 3. S. Iihama, A.Sakuma, H. Naganuma, M. Oogane, S. Mizukami, and Y. Ando, Phys. Rev. B 94, 174425 (2016). 4. D.-L. Zhang, K. B. Schliep, R. J. Wu, P. Quarterman, D. R. Hickey, Y. Lv, X. Chao, H. Li, J.-Y. Chen, Z. Zhao, M. Jamali, K. A. Mkhoyan, and J.-P. Wang, Appl. Phys. Lett. 112, 152401 (2018). 5. D.-L. Zhang, C. Sun, Y. Lv, K. B. Schliep, Z. Zhao, J.-Y. Chen, P. M. Voyles, and J.-P. Wang, Phys. Rev. Applied 9, 044028 (2018). 6. D.-L. Zhang, D. Huang, R. J. Wu, D. Lattery, J. Liu, X. Wang, D. B. Gopman, K. A. Mkhoyan, J.-P. Wang, and X. Wang, Appl. Phys. Lett. 117, 082405 (2020)

**Images:**

![](https://assets.underline.io/uploads/markdown_image/1/image/759ad544c5fd3f1e39164b751e71e26b.jpg)
FIG. 1. (a) Atomic-resolution HAADF-STEM image of the as-deposited Ru-seeded FePd thin film. (b) The out-of-plane (θ-2θ scans) XRD patterns as a function of the annealing temperatures for Ru-seeded FePd thin films. The very clear (001) and (002) peaks of L10-phase are observed, indicating the high-ordered FePd thin films. (c), (d) The temperature-dependent effective anisotropic field (Hk,eff) and damping constant extracted from TR-MOKE measurements for both as-deposited and 400 oC-annealed samples.

 Low Gilbert damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films at elevated temperatures

Enhancement of switching perpendicular magnetic tunnel junctions (p-MTJs) with an electric-field has been a milestone for realizing ultra-low energy memory and computing devices. To integrate with current STT-MTJ and SOT-MTJ devices the typical linear fJ/Vm range voltage controlled magnetic anisotropy (VCMA) needs to be enhanced through stack engineering. We have investigated possible non-linear voltage controlled magnetic anisotropy (VCMA) in heavily electron depleted devices, where the magnetic anisotropy could be reduced with positive and negative voltages, differing with the typical linear VCMA voltage behavior. A possible bidirectional and 1.1 pJ/Vm VCMA effect can be realized based on theoretical predictions with heavily electron depleted Fe/MgO interfaces. To improve upon existing VCMA technology we have proposed inserting high work function materials under the magnetic layer which will deplete electrons from the magnetic layer biasing the gating window into the electron-depleted regime where the pJ/Vm and bidirectional VCMA effect was predicted. We have demonstrated tunable control of the under-layer’s work function by utilizing Ta/Pd(x)/Ta trilayers. By modulating the Pd thickness from 0-20 nm we have observed a tunable change in the Ta layer’s work function from 4.3eV to 4.8eV. To investigate the extent of the electron depletion as a function of the Pd thickness in the trilayer we have performed DFT calculations on supercells of Ta/Pd (X)/Ta /CoFe /MgO. We are working to improve the quality of our gate dielectric materials to avoid hysteretic ionic effects allowing for a reliable VCMA measurement of the Ta/Pd/Ta samples.

![](https://assets.underline.io/uploads/markdown_image/1/image/a8360ad2cb5f5ae617004083260b5005.jpg)

Enhancement of Voltage Controlled Magnetic Anisotropy (VCMA) Through Electron Depletion

Enhancement of Voltage Controlled Magnetic Anisotropy (VCMA) Through Electron Depletion

Application of electric fields (E-fields) on perpendicular magnetic tunnel junctions (p-MTJs) is a promising solution for improving energy efficiency in spintronics based memory and logic systems [1]. Many studies on E-field effects on p-MTJs have focused on voltage-controlled magnetic anisotropy (VCMA) of the p-MTJs free layer to reduce the energy required for p-MTJs to switch magnetization states [2]. In this approach, VCMA temporarily decreases the energy barrier separating the two magnetization states and bidirectional switching is achieved using either an external magnetic field or a spin-polarized current. Another approach is to utilize voltage controlled exchange coupling (VCEC) between two ferromagnetic layers in synthetic antiferromagnetic (SAF) structures. Recently, bidirectional switching through VCEC has been demonstrated on p-MTJs with bottom dual-SAF free layers [3]. Benchmarking on MRAM technologies has shown VCEC-MRAM to have much lower energy dissipation than spin-orbit torque (SOT) MRAM [4]. However, SOT-MRAM has faster write speeds since SOT allows for ultra-fast (≤ 400ps) switching [5]. In this work, we explore the potential for SOT-assisted VCEC switching on p-MTJs with bottom dual-SAF free layers fabricated on bilayer spin hall channels. Fig. 1 shows that the SOT current can tune the coercivity of the p-MTJ, which illustrates that SOT can assist in VCEC switching. Fig. 2 shows that a voltage applied to the MTJ causes either a positive or negative shift in its stray field (center of the field switching curve), which indicates that voltage influences interlayer exchange coupling in the SAF free layer, thus demonstrating VCEC. Since the coercivity of the p-MTJs can be tuned with both VCEC and SOT, dual-biasing of SOT+VCEC can possibly generate stochastic signals for probabilistic-bits. By utilizing the effects of both VCEC and SOT, we introduce a potential solution for low-energy and ultra-fast MRAM technology as well as more novel computing paradigms such as probabilistic spin logic.

![](https://assets.underline.io/uploads/markdown_image/1/image/c46c24b4bba3f3242ec62765e893ac77.jpg)

Fig. 1. Anomalous hall resistance versus field measurements at SOT currents ranging from 1mA to 2.25mA.

![](https://assets.underline.io/uploads/markdown_image/1/image/98c15c49ed5dd8b81e43a340598f2316.jpg)

Fig. 2. Tunneling magneto-resistance (TMR) vs. field measurements at VCEC voltages of +1.1V and -1.1V.

Spin-orbit torque assisted switching with voltage controlled exchange coupling

***Supported by *** 

![](https://assets.underline.io/uploads/markdown_image/1/image/7647be6e9af5f051a0be439ab0ffd8c0.png)

SB: Recent Developments in Advanced Magnetic Tunnel Junctions

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Presentations

Perpendicular Magnetic Tunnel Junctions with Crystalline Anisotropy and Energy efficient Switching of Synthetic Antiferromagnet pMTJs by voltage

Ultra low current density switching via voltage

Anomalous Temperature Dependence of Phonon Pumping by Ferromagnetic Resonance in [Co/Pd]n Multilayers with Perpendicular Anisotropy

Spin-orbit torque switching of synthetic antiferromagnetic layer by metallic bilayers with opposite spin Hall angles

High-frequency magnetoacoustic resonance through strain-spin coupling in perpendicular magnetic multilayers INVITED

Low Gilbert damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films at elevated temperatures

Enhancement of Voltage Controlled Magnetic Anisotropy (VCMA) Through Electron Depletion

Spin-orbit torque assisted switching with voltage controlled exchange coupling

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