Professional Development Strategies to Unleash the Highest Potential of Faculty, Postdoctoral Scholars, and Graduate Students in the MSI Environment

Spin based photovoltaic (PV) effect is novel research in energy harvesting area.Recently, spin-PV effect was demonstrated on magnetic tunnel junction-based molecular spintronics (MTJMSD).This prior work mainly focused on NiFe/AlOx/NiFe MTJ[1].To advance this field there is a critical need of investigating a wide range of magnetic materials.MgO insulator and CoFeB electrode-based MTJS are well established for showing high TMR ratio and heavily studied for computer memory operation.However,they have never been integrated into the molecular spintronics study.This study made effort to develop a fabrication method by which CoFeB/MgO/CoFeB MTJ could be produced in the cross-junction form to facilitate transport and electrical measurements.To do so we had to overcome numerous fabrication challenges.First, we investigated the air stability of CoFeB using reflectance study as a function of temperature.We observed that CoFeB was stable in air up to ~100C.To produce stable and low leakage current tunnel junctions we iteratively investigated the role of multiple bottom electrode fabrication factors through Taguchi Design of experiment.We produced bottom electrode in such a way that thin films have optimum tapered edge geometry and ~0.15 nm Rq roughness.To produce exposed side edges for molecule spin channel attachment we deposited MgO and top electrode through photolithorgraphically produced cavity perpendicular to the bottom electrode. To convert MTJ into MTJMSD we electrochemically bridged the SMM molecules across MgO and conducted current-voltage study before and after molecule spin channel creation.Interestingly, SMM produced current suppression at room temperature by ~200% at 300mV. Also, we observed PV effect. This MTJ produced 0.08 open circuit voltage and 5.19E-9 saturation current under 1sun(1000 mW/cm2) light intensity. To investigate the mechanism, we perform KPAFM. The difference between electrodes before and after SMM bridging was 33 and 150 mV, respectively. Higher difference in KPAFM voltage signifies a large difference in electrode resistivity. KPAFM also suggests the observed PV effect is mainly from the impacted ferromagnetic electrode region and not due to the interaction of light at molecular channels. 
**References** 1- P. Tyagi and C. Riso, "Molecular spintronics devices exhibiting properties of a solar cell," Nanotechnology, vol. 30, p. 495401, 2019/09/19 2019.
2- P. Tyagi and C. Riso, "Magnetic force microscopy revealing long range molecule impact on magnetic tunnel junction based molecular spintronics devices," Organic Electronics, vol. 75, p. 105421, 2019/12/01/ 2019.
3-Heersche, H. B., De Groot, Z., Folk, J. A., Van Der Zant, H. S. J., Romeike, C., Wegewijs, M. R., ... & Cornia, A. (2006). Electron transport through single Mn 12 molecular magnets. Physical review letters, 96(20), 206801.
4- Jo MH, Grose JE, Baheti K, Deshmukh MM, Sokol JJ, Rumberger EM, Hendrickson DN, Long JR, Park H, Ralph DC. Signatures of molecular magnetism in single-molecule transport spectroscopy. Nano Lett. 2006 Sep;6(9):2014-20. doi: 10.1021/nl061212i. PMID: 16968018.
5- Bogani, L., Wernsdorfer, W. Molecular spintronics using single-molecule magnets. Nature Mater 7, 179–186 (2008). https://doi.org/10.1038/nmat2133 
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Single Molecular Magnet (SMM) Producing Photovoltaic Effect(PV) on Magnetic Tunnel Junction

When paramagnetic molecules covalently bond to a ferromagnet (FM), they undergo extensive hybridization with the surface and result in a spin-polarized molecule-ferromagnet interface. The resulting ferromagnet-molecule hybridization leads to a wide range of active functionalities, such as energy-level control and spin filtering capabilities . Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are fabricated by bridging monolayers of molecules across the MTU's tunnel barrier, where they chemically bond with the FM electrodes. Thus, MTJMSDs become a highly promising testbed for controlled spintronics at room temperature MTJMSD testbed also allows the molecule-ferromagnet interface to become a significant spin pathway enabling new equilibrium density of states over long range’ ”’ Understanding the role of spin fluctuations in MTJMSD with various types of metallic electrodes is exceptionally challenging. We conducted theoretical studies to understand the free electrons spin effect on MTJMSD magnetization using 3D Heisenberg-based Monte Carlo simulations. For this study, we varied the electron spin in 1) ferromagnetferromagnet, 2) ferromagnet-paramagnet, and 3) ferromagnet-antiferromagnet electrode pairs. In general, we found that as the magnitude of free electrons spin in the electrodes and molecules increased, the device magnetization increased when the free electron had parallel coupling with its host atom. Conversely, the total device magnetization decreased for antiparallel electron-atom coupling. Interestingly, long-range ordering in antiferromagnetic electrodes diminished with antiparallel electron-atom coupling and was enhanced with parallel coupling for a free-electron spin of equal magnitude at room temperature. In this study, we also recorded the correlated distribution of the devices’ magnetic moment to elucidate the spatial impact range of molecules as a function of free electron spin. We also explored the electron spin effect on magnetic susceptibility and heat capacity. This research may inform the designing of novel molecular spintronics devices by providing a knowledge base about the impact of free electron spin for varying electrode materials. This research is supported by National Science Foundation-CREST Award (Contract # HRD- 1914751), Department of Energy/ National Nuclear Security Agency (DE-FOA-0003945). 1. A. Cornia and P. Seneor, Nature Materials 16 (5), 505-506 (2017). 2. P. Tyagi, C. Riso, U. Amir, C. Rojas-Dotti and J. Martinez-Lillo, RSC Advances 10 (22), 13006-13015 (2020). 3. P. Tyagi, C. Riso and E. Friebe, Organic Electronics 64, 188-194 (2019).

Spin Fluctuation Effect on Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSD)

Abstract Body: Molecular Spintronics devices (MSD), which possess tunable spin states, are crucial for the advancement of futuristic quantum computing technology [1]. To overcome the dominant issue of reliable mass producibility for existing MSD technology, we have designed a magnetic tunnel junction based molecular spintronics device (MTJMSD). MTJMSD is fabricated by bridging paramagnetic molecules across the edges of the ferromagnetic electrodes to create spin channels. MTJMSD enables the utilization of ferromagnetic electrodes with a wide range of magnetic anisotropies. There is a knowledge gap about the role of magnetic anisotropy on the magnetic swicthing mechanism and equilibrium magnetic prperties of the MTJMSDs. Understanding the role of anisotropy is crucial to apply this technology in futuristic spin valve type memory device applications. In this study we investigated the effect of anisotropy on the nature of the hysteresis curves generated computationally using Monte Carlo Simulations (MCS). We applied the in-plane magnetic anisotropy () along the ferromagnetic electrode of a magnetic tunnel junction. The magnitude of A varied numerically from 0 to1. A=1 represented strong anisotropy of the order of interatomic Heisenberg exchange on the ferromagnetic electrodes. We also varied the thermal energy of the device from = 0.05 to 1.1. Here, = 0.1 corresponds to the operating temperature ranges from 500C to 900C with the assumption that the Curie temperature of the device lies between 5000C to 9000C. The effect of the anisotropy transformed the regular magnetic hysteresis of MTJMSD into a “wasp-waisted” -like hysteresis curve[2]. The “wasp-waisted” -like hysteresis curve is hypothesized due to the presence of multiple magnetic phases present on the ferromagnetic electrodes caused by strong magnetic anisotropy. Here, the materials possess hard and soft magnetic phases due to the higher and lower values of coercive fields. The “wasp-waisted” -like hysteresis curve was observed relatively at lower magnitudes of anisotropy at low thermal energy. The effect was observed up to = 0.8 with the high magnitude magnetic anisotropy ( 0.9). As a result, the effect of anisotropy keeps high magnetization of the device close to Curie temperature even when all the coupling effects get nullified due to thermal agitation. This research is supported by National Science Foundation-CREST Award (Contract # HRD- 1914751), Department of Energy/ National Nuclear Security Agency (DE-FOA-0003945). References [1] A. R. Rocha, V. M. García-suárez, S. W. Bailey, C. J. Lambert, J. Ferrer, and S. Sanvito, "Towards molecular spintronics," Nature Materials, vol. 4, no. 4, pp. 335-339, 2005/04/01 2005, doi: 10.1038/nmat1349. [2] T. M. de Lima Alves et al., "Wasp-waisted behavior in magnetic hysteresis curves of CoFe 2 O 4 nanopowder at a low temperature: Experimental evidence and theoretical approach," RSC advances, vol. 7, no. 36, pp. 22187-22196, 2017.

Impact of Anisotropy on the Magnetic Hysteresis of Magnetic Tunnel Junction Based Molecular Spintronics Device (MTJMSD) Properties

Poster Session I

poster

### Welcome to the 2023 Understanding Interventions/NSF CREST Annual Conference
Welcome to our annual conference, a gathering where the knowledge of our scientific communities share what they have researched since we last met. If it is your first time attending, then thank you for stepping into our world! If you are a returning guest, then thank you for coming back! Whether you are attending for the first or the fourteenth, we treasure your trust in what we have to offer. We promise to make it worth your while.

As in years past, we have put together an energetic collection of seminars, deeper dives, speeches, posters, and workshops to whet your appetite for learning. 

We are delighted that you have chosen to attend the 2023 Annual Understanding Interventions (UI) Conference, in partnership with the NSF Centers for Research Excellence in Science and Technology (CREST) Program. 

### About the Conference 
This conference was established to facilitate dissemination and exchange of hypothesis-based research on interventions and initiatives that broaden participation in science and engineering research careers. The conference is designed to create a dialogue among behavioral/social science and education researchers, evaluators, and faculty in STEM (science, technology, engineering, and mathematics) fields who participate in intervention programs. Workshops, sessions, and posters will communicate effective strategies from successful STEM intervention programs, present results from empirical research studies, and synthesize the translation of research findings into practice on STEM learning, undergraduate research, graduate education, and student retention.

Thank you again, and welcome! 
**[Download Program Agenda](https://drive.google.com/file/d/1rTKTrWC2DOqnIF06po5xo4buAL3mPTqZ/view?usp=sharing)**

15th Conference on Understanding Interventions 2023 

This conference was established to facilitate dissemination and exchange of hypothesis-based research on interventions and initiatives that broaden participation in science and engineering research careers. The conference is designed to create a dialogue among behavioral/social science and education researchers, evaluators, and faculty in STEM (science, technology, engineering, and mathematics) fields who participate in intervention programs.

**Presenter:** Pawan Tyagi, University of the District of Columbia Academic and funded programs' success rests in unleashing the full potential of faculty, staff, and students. This workshop will engage participants in discussions on some of the key successful professional development strategies the presenter applies. This workshop will focus on the foundational knowledge of positive intelligence and practical ways to apply it to prepare anyone involved at any level to be knowledgeable about the factors that need to be addressed to unleash full human potential. We will then focus on faculty-specific important efficacy areas to navigate in typical minority institution environments and strategies to boost faculty motivation to perform at the highest level in STEM fields. This workshop will discuss the postdoctoral scholar's expectations and different strategies to promote their output during the postdoc phase in the process of supporting them to achieve their career goal. Lastly, we will discuss the ways to engage and professionally develop graduate students in the MSI environment. This workshop will also focus on training strategies for journal and proposal writing skills, adopting an industrially practiced Design of Experiment approach for boosting productivity in research, and pursuing patents and innovation commercialization in the MSI environment.

W04: Professional Development Strategies to Unleash the Highest Potential of Faculty, Postdoctoral Scholars, and Graduate Students in the MSI Environment

workshop paper

FOA: Spin Dynamics

technical paper

#### Welcome to the 67th Annual Conference on Magnetism and Magnetic Materials, MMM 2022!

The Conference was held from October 31 to November 4 and offers both in-person and on-demand content.

MMM 2022 is sponsored jointly by AIP Publishing and the IEEE Magnetics Society. Members of the international scientific and engineering communities interested in recent developments in fundamental and applied magnetism are invited to attend and contribute to the technical sessions. The technical program will include invited and contributed papers in oral and poster sessions, invited symposia, a tutorial, and several special sessions. This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

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MMM 2022

This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

Poster Session

After two years of virtual conferences, we're excited to host EMC 2022 in person at The Ohio State University in Columbus, Ohio. In addition to cutting-edge technical presentations given in multiple parallel sessions, opportunities to network with colleagues will be present throughout the conference. The size and format of the meeting makes networking easy, whether you have been coming to the conference for many years or are a first-time attendee.

EMC is coordinated with the Device Research Conference (DRC), which will be held the same week, from June 26-29. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchange of information between attendees of both Conferences.

For information on the 80th Device Research Conference, please visit the DRC 2022 website.



EMC 2022

The Electronic Materials Conference (EMC) is the premier annual forum on the preparation, characterization and use of electronic materials. This year’s event will feature a plenary session, topical sessions, a poster session and more.

DD: Materials for Memory and Logic

The Electronic Materials Conference (EMC) is the premier annual forum on the preparation, characterization and use of electronic materials. This year’s event will feature a plenary session, topical sessions, a poster session and more.

EMC is coordinated with the Device Research Conference (DRC), which will be held during the same week, from June 20-23. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchange of information between attendees of both Conferences.

![](https://assets.underline.io/uploads/markdown_image/1/image/eb26c24a18d5d1030616afa4f993cf89.png)
	
<a href="https://www.mrs.org/docs/default-source/meetings-events/mrs-conference-services/2021/emc-2021/2021-emc-program-at-a-glance-6-16-21.pdf?sfvrsn=e39f950c_4">Latest Program-at-a-Glance</a>

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Pawan Tyagi

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Professional Development Strategies to Unleash the Highest Potential of Faculty, Postdoctoral Scholars, and Graduate Students in the MSI Environment

Professional Development Strategies to Unleash the Highest Potential of Faculty, Postdoctoral Scholars, and Graduate Students in the MSI Environment

Single Molecular Magnet (SMM) Producing Photovoltaic Effect(PV) on Magnetic Tunnel Junction

Spin Fluctuation Effect on Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSD)

Impact of Anisotropy on the Magnetic Hysteresis of Magnetic Tunnel Junction Based Molecular Spintronics Device (MTJMSD) Properties

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