Susumu Shuto received the B.S. and M.S. degrees in physics from Nagoya University, Japan, in 1989 and 1991, respectively. In 1991, he joined the R&D Center of Toshiba Corporation. Since then, he has been engaged in the research and development of NAND Flash memories, nano-flash memories and ferroelectric memories. He was a visiting scholar at the Center for Integrated Systems, Stanford University, Stanford, CA, from 1999 to 2001. He is now working in the Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation. He is currently interested in the process integration and reliability of ferroelectric memories.