Andrew Allerman is a Distinguished Member of Technical Staff in the Advanced Electronic and Optoelectronic Materials Department at Sandia National Laboratories in Albuquerque, NM. Throughout his career, he has specialized in the development of MOCVD processes for a wide range of compound semiconductor materials and device technologies. His work on AlGaN alloys has spanned more than 20 years and enabled UV laser diodes and LEDs, UV-sensitive photodetectors, intersubband, electro-absorptive modulators at 1550 nm, and more recently Al-rich AlGaN-channel HEMTs and power diodes along with high temperature MOCVD growth processes for h-BN. His prior work includes MOCVD growth of As-P-Sb and dilute nitride III-V compound semiconductors for mid-IR laser diodes and LEDs, near-IR VCSELs, HBTs, HFETs, HEMTs, solar cells (1 eV) and photonic integrated circuits. Andy is a member of several international advisory boards for III-Nitride semiconductor conferences and has been program co-chairs of numerous conferences over the past 27 years. He received his B.S. and Ph. D degrees in Physics from Auburn University.