P. Moens, et al. have proposed that CVS-TDDB cannot capture the impact of both electron and hole trapping mechanisms on the failure distribution function, in contrast to CCS-QBD. In this work, the investigation of electron trapping under the CCS is conducted in commercial Silicon dioxides thermally grown on 4H-SiC based on the electron trapping model proposed by M. Liang, et al. The model results are consistent with the measured results when the electron trapping dominants.

Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC Under the Constant Current Stress

This work investigates the behavior of vth, subthreshold swing , and interface state density of commercial SiC MOSFETs during burn-in process. This study aims to determine the critical stress time to mitigate excessive Vth shift caused by the increase of Dit . The research approach offers insights for optimization of burn-in techniques in the industry, with the objective of reducing shift and preventing the degradation of the intrinsic lifetime of gate oxide while ensuring efficiency.

Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs

In this work, the influence of various oxide electric field (۳ܠܗ (stress conditions on the gate oxide lifetime, gate leakage current, and threshold voltage of 1.2 kV 4H-SiC power planar metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. The results suggest that high ۳ܠܗ stress (> 9.4 MV/cm) applied to the gate oxide of commercial SiC power MOSFETs for a certain period degrades the oxide lifetime due to high Fowler-Nordheim (F-N) electron tunneling current followed by hole trapping. Moreover, hole trapping enhances the gate leakage current and reduces the threshold voltage. Therefore, the generation of holes under high electric field conditions should be avoided to ensure the reliability of SiC power MOSFETs.

Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

Poster Session: SiC Devices

poster

#### Welcome to the 62nd IEEE International Reliability Physics Symposium (IRPS)! 
**The 2024 IEEE International Reliability Physics Symposium (IRPS) was held in Dallas, Texas from April 14 to 18, 2024.** 

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On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2024, scheduled to take place from April 14-18, 2024, in Dallas, TX. 
Over its 62-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2024 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics beyond CMOS device, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on neuromorphic computing, dielectric breakdown in leading edge devices, and GaN technology will be provided on Monday after the tutorials.

The IRPS 2024 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Prof. Shinichi Takagi from The University of Tokyo and Dr. Su Jin Ahn from Samsung on Tuesday, Dr. Rajeev Malik from IBM on Wednesday, and Dr. Sameer Pendharkar from Texas Instruments on Thursday. The technical program, organized into three parallel tracks, consists of contributed and seventeen invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2023 and the International Integrated Reliability Workshop (IIRW) 2023, will be given in the technical program. 

Tuesday evening will host ten workshops, offering an opportunity for in-depth, face-to-face discussions on emerging reliability challenges, including the three IRPS 2024 focus topics. A poster session will be held in the Austin Ranch outside the symposium building on Wednesday evening. Both events are sure to be lively. The IRPS 2024 and the International ESD Workshop (IEW) will be co-hosted with IEW registrants participating in both IRPS and IEW programs.

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**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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IRPS 2024 Main Conference

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

7B (SiC Devices)

technical paper

Session Chairs: Aivars Lelis and Victor Veliadis

1.C SiC Devices - Device Reliability and Robustness

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 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

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IEEE WiPDA 2022

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Michael Jin

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Presentations

Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC Under the Constant Current Stress

Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs

Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

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