Stability and reliability issues of dynamic ONresistance for Parallel-connected GaN power devices are investigated for the first time. The “550-V-stress/100-V monitor” scheme is used to identify the irreversible dynamic RON degradation. The time-resolved degradation for lifetime evaluation is conducted, where the Parallel-connected devices exhibit a longer operation lifetime as compared with Single device, due to the self-adjustment of the discharging current during the hard switching turn-ON transient.

The First Investigation of Switching Lifetime on Parallel-connected GaN power devices

2C (GaN Devices)

technical paper

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The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

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The First Investigation of Switching Lifetime on Parallel-connected GaN power devices

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