
CHENG-HONG YANG
TSMC, Taiwan
reliability
gan
field plate
off-state stress
safe operation area (soa)
saturation current impact
2
presentations
SHORT BIO
Cheng-Hong Yang received the Ph.D. degree in Electrophysics from National Chiao Tung University, Hsinchu, Taiwan, R.O.C., in 2013. His Ph.D. research is on electrical and optical characterizations of InAs QD. He has been working in Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan, R.O.C., as a FEOL gate oxide reliability engineer in the HKMG technology from 2014 to the present.
Presentations

HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications
YU-SHAN LIN and 12 other authors

A Realistic Modeling Approach To Explain the Physical Mechanism of TDDB For Automotive Grade-Zero Applications
CHENG-HONG YANG