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CHENG-HONG YANG

TSMC, Taiwan

reliability

gan

field plate

off-state stress

safe operation area (soa)

saturation current impact

2

presentations

SHORT BIO

Cheng-Hong Yang received the Ph.D. degree in Electrophysics from National Chiao Tung University, Hsinchu, Taiwan, R.O.C., in 2013. His Ph.D. research is on electrical and optical characterizations of InAs QD. He has been working in Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan, R.O.C., as a FEOL gate oxide reliability engineer in the HKMG technology from 2014 to the present.

Presentations

HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications

YU-SHAN LIN and 12 other authors

A Realistic Modeling Approach To Explain the Physical Mechanism of TDDB For Automotive Grade-Zero Applications

CHENG-HONG YANG

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