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Yinghong Zhao

Samsung Austin Semiconductor, LLC, United States

reliability

electromigration

inter-level tddb

polarity dependence

conduction mechanism

metal density

tungsten silicide

failure mechanism.

2

presentations

SHORT BIO

Yinghong Zhao received the B.Eng. degree in Chemical engineering and M.Eng degrees in Material engineering from East China University of Science and Technology, China and M.Sc. degrees in Electrical engineering from National University of Singapore.

She has 18 years Reliability experience in semiconductor industry specialize in BEOL and CPI reliability. She has been worked in Semiconductor Manufacturing International Corporation (SMIC) and Global Foundries (GF). Now she is working in Samsung Austin Semiconductor.

Presentations

Impacts of Post-Cu CMP Queue Time on Reliability

Yinghong Zhao and 13 other authors

Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application

Yinghong Zhao

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