
Yinghong Zhao
Samsung Austin Semiconductor, LLC, United States
reliability
electromigration
inter-level tddb
polarity dependence
conduction mechanism
metal density
tungsten silicide
failure mechanism.
2
presentations
SHORT BIO
Yinghong Zhao received the B.Eng. degree in Chemical engineering and M.Eng degrees in Material engineering from East China University of Science and Technology, China and M.Sc. degrees in Electrical engineering from National University of Singapore.
She has 18 years Reliability experience in semiconductor industry specialize in BEOL and CPI reliability. She has been worked in Semiconductor Manufacturing International Corporation (SMIC) and Global Foundries (GF). Now she is working in Samsung Austin Semiconductor.
Presentations

Impacts of Post-Cu CMP Queue Time on Reliability
Yinghong Zhao and 13 other authors

Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application
Yinghong Zhao