<br/>Antiferromagnetic materials have recently attracted much interest due to a number of advantages including high resonance frequencies up to the terahertz. Further, the possibility to electrically modulate the magnetic properties such as the anisotropy makes them an excellent candidate for energy-efficient devices at ultra-high frequencies. In this study, we theoretically explored one such application in the dynamic manipulation of electromagnetic responses with a broad tunable spectral range. The materials considered were dielectric antiferromagnets with strong magneto-electric or –elastic coupling which can achieve robust control in the perpendicular magnetic anisotropy. The metallic counterparts were not suitable due to the anticipated large loss. A theoretical analysis based on the Landau-Lifshitz equation was used to derive the frequency-dependent permeability and the resonant frequency of the antiferromagnet for different biaxial anisotropy profiles and incident electromagnetic wave polarizations. Numerical calculations based on typical parameters available in the literature (such as NiO) strongly indicated that the resonance frequency modulation as much as 10’s of percent may be possible in the sub-mm wavelength range, along with the corresponding changes in the permeability. Application to specific devices such as a bandpass filter further illustrated the validity of the concept.<br/><br/>Funding Acknowledgement<br/>This work was supported, in part, by the U.S. Army Research Office (No. W911NF-16-1-0472).

![](https://assets.underline.io/uploads/markdown_image/1/image/6ffd93f402fd8b4c21123e86d0bbb698.jpg)

Fig.1 Schematic of the magnetic-piezoelectric composite. Electric field along out-of-plane direction causes magneto-elastic effects and influences eigen-frequency by modifying in-plane magnetic anisotropy. EM wave is incident along x-axis.


![](https://assets.underline.io/uploads/markdown_image/1/image/e677976b7cbcf549791f319205ea030e.jpg)

Fig.2 Data showing a high electric field tunable AFMR frequency shift with external voltage at 0, -V, and +V=8kV/cm (Not the final results)

Voltage-Controlled Dynamic Modulation of Electromagnetic Response in Antiferromagnetic Materials at Terahertz Frequencies

**Session chair:** Romain Lebrun, Unité Mixte de Physique CNRS/Thales



GOP - Antiferromagnetic Spintronics II

technical paper

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Voltage-Controlled Dynamic Modulation of Electromagnetic Response in Antiferromagnetic Materials at Terahertz Frequencies

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