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Milan Pesic

Applied Materials, United States

reliability

neuromorphic computing

retention

hzo

ferroelectric

rram

igzo

modelling

degradation

beol

fefet

electronic synapse

device simulations

3d-nand

ginestra®

5

presentations

9

number of views

SHORT BIO

Milan D. Pešić received a Ph.D. from the Technical University of Dresden, Germany, and is currently a Director of Technology Development at Applied Materials Inc. He is in charge of device pathfinding and external research, overseeing device and cell physics and research activities in advanced logic, (emerging) (non)volatile memories, and devices. Previously, he was with MDLSoft Inc., Santa Clara, USA, Ferroelectric Memory Company, and NaMLab, Dresden, Germany. Up to now, he has given 14 invited talks, (co)authored over 70 technical papers and five book chapters, and filed over 30 US patents.

Presentations

Characterization and multiscale modeling of TDDB in state-of-the-art BEOL

Andrea Palmieri and 24 other authors

Blocking oxide material engineering to improve retention loss in 3D NAND: a modeling process optimization study

Tommaso Rollo and 4 other authors

Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors

Bastien Beltrando and 11 other authors

Reliability of non-volatile memory devices for neuromorphic applications: a modeling perspective

Andrea Padovani, Communications Chair and 6 other authors

Electron-assisted switching in FeFETs: MW dynamics – retention - trapping mechanisms and correlation

Milan Pesic and 5 other authors

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