
Milan Pesic
Applied Materials, United States
reliability
neuromorphic computing
retention
hzo
ferroelectric
rram
igzo
modelling
degradation
beol
fefet
electronic synapse
device simulations
3d-nand
ginestra®
5
presentations
9
number of views
SHORT BIO
Milan D. Pešić received a Ph.D. from the Technical University of Dresden, Germany, and is currently a Director of Technology Development at Applied Materials Inc. He is in charge of device pathfinding and external research, overseeing device and cell physics and research activities in advanced logic, (emerging) (non)volatile memories, and devices. Previously, he was with MDLSoft Inc., Santa Clara, USA, Ferroelectric Memory Company, and NaMLab, Dresden, Germany. Up to now, he has given 14 invited talks, (co)authored over 70 technical papers and five book chapters, and filed over 30 US patents.
Presentations

Characterization and multiscale modeling of TDDB in state-of-the-art BEOL
Andrea Palmieri and 24 other authors

Blocking oxide material engineering to improve retention loss in 3D NAND: a modeling process optimization study
Tommaso Rollo and 4 other authors

Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors
Bastien Beltrando and 11 other authors

Reliability of non-volatile memory devices for neuromorphic applications: a modeling perspective
Andrea Padovani, Communications Chair and 6 other authors

Electron-assisted switching in FeFETs: MW dynamics – retention - trapping mechanisms and correlation
Milan Pesic and 5 other authors