Gallium nitride (GaN), one of the wide-bandgap compound semiconductors, has unique material properties such as high electron saturation velocity and high breakdown field. A two-dimensional electron gas (2DEG) formed at an AlGaN/GaN heterointerface via spontaneous and piezoelectric polarization effects exhibits high sheet density and high electron mobility. Using these features, transistors with various device topologies (lateral and vertical) have been developed for both RF and power electronics applications. Among them, AlGaN/GaN-HEMTs fabricated on a high thermal conductivity SiC substrate are most widely used in high-power RF amplifiers for radars, satellite communications, cell phone base stations, etc. Owing to the rapidly increasing demand for higher bandwidths in the next generation communication and higher resolution imaging systems, millimeter-waves (30 – 300 GHz) are expected to play a critical role. Accordingly, GaN-based power amplifiers that have a high gain, output power, efficiency, and linearity at millimeter-wave frequencies are required. The frequency performance of GaN-HEMTs has been successfully improved through aggressive device scaling, and the cutoff frequency (fT) of highly scaled GaN HEMTs reached a 450-GHz range, i.e., 3-4× higher than conventional devices. The high-frequency device scaling, however, comes at the expense of reduced transistor’s power density due to the limited voltage swing. To overcome a well-known performance trade-off of millimeter-wave transistors among operational frequency, power density, efficiency, linearity, and reliability, new III-N material platforms as well as novel transistor architectures were proposed. They include (1) new III-N barrier materials such as AlN, InAl(Ga)N, ScAlN utilizing a larger polarization effect, (2) an Al composition graded AlGaN channel, (3) N-polar GaN-HEMTs, and (4) multiple 2DEG channels with a lateral gate. In this talk, I will discuss the progress of GaN-based high-frequency transistor development and technical challenges and introduce our new approaches on multiple 2DEG channel HEMTs with a buried dual gate (BRIDGE HEMTs).

High-Frequency GaN-Based Transistor Technologies: Progress and Future

<br>**Presenter:** 
<br>Keisuke Shinohara, Teledyne Scientific & Imaging, United States

Keynote: High-Frequency GaN-Based Transistor Technologies: Progress and Future

keynote

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


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IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Keisuke Shinohara

1

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High-Frequency GaN-Based Transistor Technologies: Progress and Future

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