Wide-bandgap Device and related technology to Enable Medium Voltage Distribution Power Grid

DC short circuit fault ride-through is a critical feature for the reliability and performance of DC microgrids. This paper presents the advantage that SiC-based devices offer for designing a Dual-Active Bridge (DAB) DC-DC converter while considering DC short circuit events. It is known that SiC-MOSFET devices have a higher transient current carrying capability than Si-IGBT devices due to their superior thermal conductivity. This characteristic of SiC-MOSFET devices is utilized to improve the design of DAB for DC short circuit fault ride-through applications. An analytical model is developed to understand the performance of a DAB during DC short circuit faults. Switching and thermal simulations are used to validate the analytical model and compare DAB designs based on SiCMOSFET and Si-IGBT. The advantages of SiC-MOSFET enabled DAB compared to Si-IGBT enabled DAB are also quantified for a particular application of DAB in a DC microgrid. It is shown that for fault ride-through applications, DAB enabled with SiCMOSFET can be designed for lower phase shifts compared to Si-IGBT enabled DAB, which inherently reduces the inductor size and circulating current in a DAB.

Advantages of SiC-Based Devices on the Design of Dual-Active Bridge DC/DC Converter for DC Faults

This paper demonstrates a GaN-based three-level inverter design for an electric vehicle (EV) traction application. The basic power block is a three-level active neutral point clamped (3L-ANPC) converter operating at 800 V DC bus voltage with the use of two paralleled 650 V, 60 A GaN E-HEMTs. The paper focuses on switching mode selection for better thermal performance of high-power 3L-ANPC inverters. The paper presents design details and guidelines for power layout structure and gate driver. The key parasitic inductances of the designed power block are extracted using ANSYS Q3D. A PLECS simulation model using the device loss parameters shows approximate power delivering capability of 41 kW for the designed forced air-cooled three-phase inverter. Experimental double pulse test results are presented with low voltage overshoot to verify the low inductance power loop design. Experimental results of the three-phase 3LANPC inverter operation at 70 kHz switching frequency are presented for delivered output power of 5.1 kW at 550 V DC.

Design Considerations of a GaN-Based Three-Level Traction Inverter for Electric Vehicles

This presentation will focus on the applications of Soft Magnetic Components and Materials for Emerging Power Conversion Applications such as Solid State Transformer [SST] Technology and several power conversion systems at both Medium-Voltage [MV] and Low-Voltage [LV]. The re-evaluation of conventional magnetics solutions has become important and essential due to the emergence and adoption of WBG [Wide-Band Gap] power devices such as SiC and GaN devices. These devices not only enable co-design of MV and higher switching frequency, but also enable higher temperature operations requiring characterization of magnetics for such specifications. This presentation will cover advances in medium frequency magnetics for WBG devices based power converters and especially for high power converters. It will highlight the latest advances in soft magnetic material qualification and characterization under non-sinusoidal waveforms. It will provide an overview of magnetic core loss models and implications for thermal modeling. It will also address novel techniques for understanding leakage inductance and anomalous losses due to leakage flux. The novel concept of strain annealing for permeability engineering and design opportunities for heterogeneously tuned permeability cores in high power converter applications will be addressed.

Solid State Transformer Technology Based on Advanced Materials and Design Concepts

Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CD-FQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC Power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.6x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

This talk discusses the dynamic characterization of a 3.3 kV SiC-based reverse voltage blocking switch for three different switch configurations used for the current source inverter (CSI). The static characterization of the devices is done for the latest generation 3.3 kV SiC MOSFET and diode. Based on these results, a preferred current switch is suggested for a medium voltage CSI.

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

Moderator: Kevin Bai, University of Tennessee, Knoxville
 
 Panelists:
 Rajib Datta, Chief Engineer in Power Electronics, GE Research
 Helen Li, Professor, Florida State University
 Jing Xu, Senior Principal Scientist, ABB
 Subhashish Bhattacharya, Professor in NCSU
 Paul Ohodnicki, Associate Professor in Pittsburg University

technical paper

Download the proceedings [here](https://underline.io/events/372/lounge)
 
 
 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

You must register to attend this event. If you haven't done so already, please use the link below to register for the event. All registered attendees will have access to the event site on November 4th.

Registration Is Required

IEEE WiPDA 2022

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Session Chairs: Babak Parkhideh and Zhao Yuan

2.A SiC Applications – 1

Session Chairs: Jason Zhang and Nabil Akel

2.B GaN Applications – 1

**Session chairs:** Paul Ohodnicki, University of Pittsburgh and Kiyonori Suzuki, Monash University



Symposium SF: Soft Magnetic Components and Materials for Emerging Power Conversion Applications

symposium

The 15th Joint MMM-INTERMAG Conference (2022 Joint) is sponsored jointly by AIP Publishing and the IEEE Magnetics Society. Members of the international scientific and engineering communities interested in recent developments in fundamental and applied magnetism are invited to attend and contribute to the technical sessions. The technical program will include invited and contributed papers in oral and poster sessions, invited symposia, a plenary session, and an evening session, with about 1500 presentations overall. This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

The 2022 Joint Conference will offer both in-person and prerecorded on-demand content.

For tickets to the event, please register at the following link: https://magnetism.org/register

Please register for the Joint MMM-Intermag conference to join the event.

2022 Joint MMM-INTERMAG

This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

**Session Chairs:**
 Aivars Lelis, U. S. Army Research Laboratory, United States
 Anant Agarwal, Massachusetts Institute of Technology, United States

SiC Devices 2: Novel Device Designs

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

IEEE WiPDA 2021

**Session Chairs:**
 
 Aivars Lelis, U. S. Army Research Laboratory, United States
 Anant Agarwal, Massachusetts Institute of Technology, United States

Subhashish Bhattacharya

6

6

Presentations

Wide-bandgap Device and related technology to Enable Medium Voltage Distribution Power Grid

Advantages of SiC-Based Devices on the Design of Dual-Active Bridge DC/DC Converter for DC Faults

Design Considerations of a GaN-Based Three-Level Traction Inverter for Electric Vehicles

Solid State Transformer Technology Based on Advanced Materials and Design Concepts

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES