With unrivalled better technology-specific figure-of-merits SiC MOSFETs and GaN HEMTs have started to conquer high power applications such as Mobile phone chargers, On-board chargers and Motor drives replacing IGBTs or Superjunction devices. Driven by ever higher demands on power density and efficiency and new trends such as bidirectional power flow for vehicle-to-x applications, wide bandgap power devices have turned into a focal point of design activities. In all of these applications a simple replacement of IGBTs or Superjunction devices by wide bandgap devices may bring already some benefits. The full potential of wide bandgap devices, however, will only be reached when being combined with perfectly matching topologies and control. In motor drives e.g. replacing the IGBTs of a B6 bridge with SiC MOSFETs may result in better efficiency in light load and urban drive cycles. However, switching speed limitations down to around 5V/ns to avoid e.g. partial discharge in the insulation of the motor windings or reflections in long cables, will prevent to increase switching frequencies substantially. In contrast, changing the topology from a voltage source inverter to a current source inverter, which creates a continuous voltage on the machine, opens up a completely new optimization range both for the electric machine and its inverter. Similarly, a transition from modular single phase power stages into true 3-phase active frontends using synergetic control options enables much higher power density for on-board chargers. The presentation will start with a few key characteristics of the involved technologies and their perspective and will highlight system advantages of wide bandgap power devices in a few selected key applications such as Onboard chargers and Motor drive.

On the benefits of SiC and GaN in high power applications

<br>**Presenter:** 
<br>Dr. Gerald Deboy, Infineon Technologies, United States

Keynote: On the benefits of SiC and GaN in high power applications

keynote

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Gerald Deboy

1

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On the benefits of SiC and GaN in high power applications

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