Abstract— In this work, the humidity performance of three enhancement mode GaN HEMTs with different chip designs and packages from different manufacturers were investigated by a High Humidity, High Temperature, Reverse Bias (H³TRB) test. The devices were tested until end of life (EoL) with a few devices even surviving the end of the test after passing 6000 test hours. Some of the devices provided a precursor of the catastrophic failure, while others just failed suddenly. There were little changes in the characteristics obtained at intermediate measurements. The Weibull analysis of the failures shows a consistent and clear wear-out behaviour. These results document an excellent humidity capability of the tested GaN devices even outperforming usual silicon devices, although GaN devices exhibit smaller insulation distances and higher electric fields. However, during the initial phase of the test conductive anodic filaments (CAF) formed in the PCB adapters and compromised the leakage current readings such that the adapters had to be removed to be able to continue the test. In other words, the weakest spot is no longer the semiconductor device itself, but has moved to other components in the circuitry.

Humidity Capability of Enhancement Mode GaN High Electron Mobility Transistors


<br>**Session Chairs:**
<br>
<br>Babak Parkhideh, University of North Carolina - Charlotte, United States
<br>Andrew Binder, Sandia National Laboratory, United States


Virtual Poster Session 1: GaN Power Devices 3

poster

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

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[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


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IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Alexander Brunko

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Humidity Capability of Enhancement Mode GaN High Electron Mobility Transistors

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