For efficient converter design, modeling of switching components must be both accurate and fast. A variety of simulation models
for SiC Power MOSFETs has been developed. To achieve adequate accuracy, models are adjusted to experimental data by applying fitting methods. However, proposed universal fitting methods result in high-dimensional optimization problems. Their computational inefficiency leads to either long run times or low accuracy. This paper proposes a new universal parameter fitting method that is at least twice as fast and yields a more accurate outcome than presented methods under comparable conditions. It effectively reduces the dimensionality of the parameter fitting optimization problem by sensitivity-based reduction of optimization parameters.
Thereby, it optimizes both model adjustment speed and accuracy, which are critical factors for an efficient converter design process. The method does not compromise flexibility as it is universally applicable to any SPICE model and can meet any model architecture preference.

Smart Universal Parameter Fitting Method for Modeling Static SiC Power MOSFET Behavior


<br>**Session Chairs:**
<br>
<br>Aivars Lelis, U. S. Army Research Laboratory, United States
<br>Anant Agarwal, Massachusetts Institute of Technology, United States


Virtual Poster Session 2: SiC Devices 3

poster

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


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IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

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Smart Universal Parameter Fitting Method for Modeling Static SiC Power MOSFET Behavior

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