Davide Bisi
Transphorm Inc., United States
gan
hemt
n-polar
current limiter
short-circuit
hemts
desat
deep level
4
presentations
2
number of views
SHORT BIO
Dr. Bisi has more than 10 years of experience in GaN materials and device technology. In 2015, he received a PhD degree with the University of Padova Italy. In 2016, Dr. Bisi joined Transphorm as Member of Technical Staff, Office of the CTO. He is leading multiple GaN materials and GaN andvanced devices projects. Dr. Bisi has been awarded 1 Patent and 1 pending Patent. Dr. Bisi has co-authored more than 57 peer-reviewed journal and conference publications and has been awarded 4 Best Paper Awards. Dr. Bisi is Member of Technical Committee of ESREF and WIPDA conferences.
Presentations
Deep level effects in N-polar AlGaN/GaN High Electron Mobility Transistors: towards zero dispersion effects
Marco Saro and 12 other authors
GaN Power Device Technology and Reliability
Davide Bisi
Commercially Available N-Polar GaN HEMT Epitaxy for RF Applications
Davide Bisi and 11 other authors
Short-Circuit Capability with GaN HEMTs
Davide Bisi and 7 other authors