GaN power devices have been in mass production for over 12 years [1] and have arguably crossed over the tipping point in adoption with such end-uses as cell phone fast chargers, DC-DC converters for servers, motor drives for electric bicycles and scooters, class-D audio amplifiers, and lidar sensors for autonomous vehicles and robots.  Some of these applications first started using discrete GaN transistors and later converted to GaN integrated circuits.  Others have stayed with discrete devices.  This paper will discuss the reasons for different adoption rates in different applications and will speculate on the changes that will occur due to new GaN transistor performance and new capabilities in integrating functions in GaN.

What is the Right Level of Integration for GaN Power Devices?

GaN transistors, and more recently integrated circuits, have been in mass production for over a decade [1] with several manufacturers reporting tens of millions of units shipped with billions of hours in actual end-use applications. The track record has been extraordinarily successful, and one of the key reasons is that GaN devices are far more rugged than their silicon MOSFET ancestors [2].
Recently, Efficient Power Conversion (EPC) did a series of tests to take eGaN FETs beyond their datasheet limits to quantify the effects of large amounts of overstress voltage and current. This paper will examine the results and those tests to show how operation under extreme conditions for long periods of time can be a practical new tool for power system design engineers.

Extreme GaN – What Happens When eGaN® FETs Are Exposed to Voltage Levels Well Above Data Sheet Limits

Integrated circuits made using GaN-on-Si substrates have been in production for over seven years. During that time, GaN-based ICs have evolved from pure discrete devices to monolithic half-bridge devices and then onto power FETs that included their own monolithically integrated driver, and more recently, to fully monolithic power stages including power FETs, drivers, level shifting circuits, logic, and protection. In this talk we will look at the roadmap of GaN-on-Si integration and show how the role of discrete transistors is destined to diminish to near-zero in the next few years.

Gallium Nitride Integration and the End of Discretes

**Presenter:** Alex Lidow
 
 **Abstract:** GaN power devices have been in mass production for over 12 years [1] and have arguably crossed over the tipping point in adoption with such end-uses as cell phone fast chargers, DC-DC converters for servers, motor drives for electric bicycles and scooters, class-D audio amplifiers, and lidar sensors for autonomous vehicles and robots. Some of these applications first started using discrete GaN transistors and later converted to GaN integrated circuits. Others have stayed with discrete devices. This paper will discuss the reasons for different adoption rates in different applications and will speculate on the changes that will occur due to new GaN transistor performance and new capabilities in integrating functions in GaN.

keynote

Download the proceedings [here](https://underline.io/events/372/lounge)
 
 
 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

You must register to attend this event. If you haven't done so already, please use the link below to register for the event. All registered attendees will have access to the event site on November 4th.

Registration Is Required

IEEE WiPDA 2022

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Session Chairs:**
 Matteo Meneghini, University of Padova, Italy
 Sandeep Bahl, Texas Instruments, United States

GaN Power 1: Performance, Trapping, Robustness

technical paper

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

IEEE WiPDA 2021

**Presenter:** 
 Alex Lidow, Efficient Power Conversion, United States

Alex Lidow

3

7

SHORT BIO

Presentations

What is the Right Level of Integration for GaN Power Devices?

Extreme GaN – What Happens When eGaN® FETs Are Exposed to Voltage Levels Well Above Data Sheet Limits

Gallium Nitride Integration and the End of Discretes

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