It is well known that, over a wide range of wavelengths, a graphene sheet absorbs 2.3% of the light passing through it. This value is directly related to the fine structure constant, which can be interpreted by the very particular band structure of this material. Remarkably, it has been shown experimentally that thin InAs films exhibit an aborption spectrum characterized by steps that can also be related to the fine structure constant. We present numerical simulations (TB, KP) showing that this phenomenon is very robust and is obtained for a very large number of semiconductor materials. We complement this work with analytical calculations to understand the physical origin of this behavior. The comparison with graphene is discussed.

Optical absorption quantization in nanolayers of semiconductors

**Monday, September 20th**

**Session Chairs**: Philippe Blaise *Silvaco* and Denis Rideau *STMicroelectronics*

This tutorial will introduce to atomistic methods such as Density Functional Theory (DFT), Molecular Dynamics (MD) and Non-Equilibrium Green's Functions (NEGF). Novel simulation techniques to determine atomistic details of bulk and device properties will be address, with special emphasis on applications to materials for nano/opto electronics. The tutorial will explore the potentialities of atomistic methods in predicting the physics of these new materials and structures, including defects and their electrical and optical properties, but will also discuss how to bridge the results of simulations with experiments and spectroscopic signatures.

4. Atomistic simulations supporting new materials & process developments

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Maryam Alimoradi Jazi

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Optical absorption quantization in nanolayers of semiconductors

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