In the last 15 years, Fondazione Bruno Kessler (FBK) has developed a custom technology for single-photon avalanche diodes (SPADs) and silicon photomultipliers (SiPMs) optimized for several applications, from high-energy physics experiments to medical imaging or light detection and ranging (LiDAR). In the IPCEI framework, FBK is upgrading its microfabrication facility for the realization of 3D integrated radiation sensors. In the specific case of SiPMs, 3D integration technologies will allow to improve its capabilities by using back side illuminated (BSI) devices and Through Silicon Vias (TSV) interconnections. The BSI approach for SiPMs can be exploited to improve the current photon detection efficiency (PDE), even in the wavelength ranges far away from the visible spectrum, where typically it drops down to about 10% for the near infrared (NIR) and about 15% for vacuum ultraviolet (VUV). A first batch of BSI SiPMs for NIR detection was recently fabricated at FBK as a proof of concept. After wafer bonding and thinning, the characterization results showed an increase of the PDE of about 50% at 900 nm for BSI sensors with metal reflectors compared with the standard front side illuminated (FSI) technology. Research on the realization of the fabrication process modules optimized for near ultraviolet (NUV) and VUV BSI SiPMs is currently ongoing and will also be presented and discussed.

Back side illuminated SiPM from NIR to NUV light detection

**Tuesday, September 21st**

**Session Chairs**: Dominique Thomas *STMicroelectronics*, Gerhard Doell *Zeiss*, Klaus Pressel *Infineon*

**This session has 21 lectures. If you don't see them all please click on the 'SEE ALL' button located in the top right corner of the page**

7. IPCEI on Microelectronics: Innovative Technologies for Shaping the Future

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Fabio Acerbi

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Back side illuminated SiPM from NIR to NUV light detection

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