For more than 50 years, Moore's Law has been driven by resolution improvements of lithography scanners which generate an image of the lithography mask on the semiconductor wafer. This image contains the patterning information needed to build up an integrated circuit.
The latest scanner generation uses 13.5 nm light at 0.33NA. Since the last 2 years they are now essential to produce leading edge semiconductor devices. To further increase the resolution ZEISS is working on next generation EUV optics. This optics consists of a highly flexible illumination system and projection optics with NA 0.55 enabling single-exposure sub 8nm half-pitch resolution to allow scaling beyond the next decade.
In this presentation we will explain the system design of the high-NA optical column and we will report on the manufacturing status of mirrors and frames. Furthermore, the buildup of the infrastructure including mirror polishing, coating, surface figure metrology, mirror handling, and integration tooling will be shown.

Paul Gräupner

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