Power modules play a main role in traction inverter applications. They control engine speed and torque, regulating the energy flow between battery and motor. Due to the demanding electric and reliability performances requested by end costumers, semiconductor devices based on wide band gap compound are introduced in novel power modules. To support such device developments, there is the need to set a robust and accurate experimental methodology that shall be supported by numerical models. The targets are the prediction of thermal performance and the reliability forecast. In this framework, it has been proposed a dedicated flow to thermally characterize a multi-chip SiC MOSFET power module for automotive applications. Body-diode drop voltage has been selected as the temperature sensitive electric parameter to monitor the average junction temperature for thermal impedance measurements. Finite element model has been employed to predict temperature distribution due to device self-heating, referring to the previous characterization for the calibration of the numerical model. Once the thermal simulation methodology has been set, module temperature during inverter operations can be calculated, collecting temperature history profile into some loading conditions using a Rainflow-like approach. The several loading cases have been characterized by different temperature swing and cycle time. These classified data can be considered to evaluate lifetime duration due to selected failure mechanisms , supporting the definition of the most proper durability assessment for the application-relevant failure modes.

Structural characterization and simulation of a direct-cooled power module

**Tuesday, September 21st**

**Session Chairs**: Dominique Thomas *STMicroelectronics*, Gerhard Doell *Zeiss*, Klaus Pressel *Infineon*

**This session has 21 lectures. If you don't see them all please click on the 'SEE ALL' button located in the top right corner of the page**

7. IPCEI on Microelectronics: Innovative Technologies for Shaping the Future

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Alessandro Sitta

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Structural characterization and simulation of a direct-cooled power module

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