InP DHBTs are well known for their capability to provide both high cutoff frequencies together with high breakdown voltage. III-V Lab has developed for several years very high-speed and high swing integrated circuits based on this technology. In this presentation, we will focus on the technological features of present 0.7-μm InP/GaInAs DHBT exhibiting around 400-GHz fT and fMAX, as well as a breakdown voltage above 4.5 V and a high dissipated power above 35 mW at peak fT. The relaxed emitter width enables to work at moderate current densities and ensure a very high fabrication yield and performance homogeneity on 3’’ wafer. More compact 0.5-µm DHBT and circuit oriented device generation allowing above 500 GHz fmax is also presented. We will demonstrate that our technology is also compatible with the fabrication of GaAsSb-based InP DHBT and a comparison of the key figures of merits between Type-I and Type-II InP DHBTs fabricated in a same process will be presented.

InP DHBT technology at III-V Lab

While InP heterojunction bipolar transistor technologies show continuous improvement in terms of RF performances, the accurate characterization of these THz transistors is crucial to assess the cut-off frequencies as well as to precisely extract and validate the device compact model, thus enabling millimeter and sub-millimeter-wave IC design. On-wafer measurements are particularly difficult beyond 110 GHz since unwanted parasitic effects become predominant and may mask the intrinsic behavior of the nanoscale device. A such high frequencies, two strategies may be adopted and combined in order to perform accurate on-wafer device measurements at submillimeter-wave frequencies: i) optimizing the test structures’ design in order to minimize the parasitics, ii) developping on-wafer calibration standards on the same substrate as the device to characterize. Coupled with electromagnetic simulation for the test structures design optimization and the measurement's validation, these strategies proved to be efficient for the characterization of InP passive devices up to 500 GHz and InP DHBT up to 330 GHz.

On-Wafer TRL Calibration Kit Design for InP Technologies Characterization Up To 500 GHz

To meet the prerequisites of monolithic indium phosphide based integrated terahertz (THz) technologies that are capable of achieving beyond-5G wireless communications system, a single computationally efficient circuit design tool is essential. Through the implementation of accurate and SPICE-compatible compact models and development of associated process design kits (PDK) for InP double heterojunction bipolar transistors (DHBTs), we demonstrate that next generations of cutting-edge high speed electronic systems will benefit from (i) dedicated parameter extraction procedure,(ii) validation of model parameter set against on-wafer high-frequency measurements and deembedding methods using dedicated test structures in the beyond 110 GHz range,(iii) extrapolation of key figures of merits to scaled device dimensions leveraging a scalable model card.

For the parameter extraction procedure, we investigate the bias, temperature, and frequency dependence of two III-V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multi-geometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacitances show very good scaling, thereby allowing the separation of intrinsic and peripheral effects. 

Since thermal management is more critical in III-V technologies compared to Si-based ones, especially from the reliability point of view, for a more accurate description of electrothermal effects in InP HBTs, a new scalable model for the thermal impedance of III-V DHBTs that has been developed based on the physics of heat diffusion within the HBT architecture. The heat flow through both the emitter metal layers and toward the substrate are taken into account for the model development. The model constitutes of individual thermal contributions of the different regions of the intrinsic device and metal layers. On-wafer low-frequency S-parameters measurements have been performed on several device geometries to study the device dynamic self-heating. The model has been validated against the measurements showing good accuracy and scalability. Time-domain pulse measurements have also been performed to correlate with the frequency domain S-parameter measurements. Moreover, accuracy of the scalable model card has been validated against measurements up to 330 GHz on the InP DHBTs leveraging on-wafer measurements on passive devices (open/short) up to 500 GHz, achieved through TRL calibration and E-M simulation of designed test-structures. Finally, prediction of future III-V HBT technologies figures-of-merit for scaled device dimensions of a state-of-the-art InP DHBT is performed by using the generated scalable model card.

Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunction Bipolar Transistors

In this presentation we discuss the design, implementation and measurements of Tb/s/channel optical communication circuits realized in III-V Lab InP DHBT process. Realizations using InGaAs- and GaAsSb-base devices will be presented and compared, from transistor to circuit performances.
The design flow is detailed with specific focus on key trade-offs to reach >3-4 Vpp output swings conjugated with >100 GHz analog bandwidth as well as circuits’ design for electro-optical systems with new transmission formats using innovative DSP algorithms allowing higher transmission rates and increased spectral efficiency, like m-ary pulse-amplitude modulation (m-PAM) or quadrature amplitude modulation (m-QAM) formats. We also present the design and measurements of digital multiplexing selector operation at record 212-GBd speed and its system implementation for intra data-center communications.


Recent advances in high-speed and large-swing integrated circuits implemented in InGaAs and GaAsSb InP DHBT for terabit-class optical communications

In this talk, power amplifier MMICs developed for emerging D-band (110-170 GHz) wireless communication links using InP DHBT technology will be presented. Power amplifiers designed for millimeter-wave frequencies in general suffer from low gain of the transistors and high loss in the interconnect structures. To complicate matters, it is foreseen that higher order modulation formats will be employed to enhance the spectral efficiency in future mm-wave wireless communication links and this dictates strict linearity requirements to the power amplifiers. 
The talk will describe circuit topologies able to exhaust the potential of the InP DHBT technology used and present a low-loss interconnect strategy suitable for the implementation of matching networks and power combining structures. The experimental results of implemented D-band power amplifier MMICs will be presented.

InP DHBT based Power Amplifiers for D-band (110 – 170 GHz) Wireless Communication Links

**Monday, September 22nd**

**Session Chairs:** Cristell Maneux *IMS Bordeaux* and Virginie Nodjiadjim *III-V Lab*

Today, the ever growing communication services such as remote work, e-learning, e-healthcare and intensification of social relations supported by massive data transmission, give a new impulse to further investigate various methods to increase transmission network capacities with Tb/s/channel objective. This workshop will give insights into different key aspects of the device-to-circuit value chain highlighting the need for devices combining very high symbol rate multi-level signal generation with large output swing to efficiently drive electro-optical (E/O) modulators.

A variety of novel (i) InP DHBT devices –both InGaAs and Sb types-, (ii) calibration and measurement approaches, (iii) physics-based device simulation coupled methods including compact model and (iv) state-of-the-art E/O modulator results are covered in this workshop.
The consistency of the whole value chain leads, for instance, to very-high-symbol-rate PAM (or QAM) modulation formats.

**This session has 10 lectures. If you don't see them all please click on the 'SEE ALL' button located in the top right corner of the page**

13. From InP bipolar transistors to analog front-end integrated circuits: Innovations in devices, THz measurements, compact modeling and circuits

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Virginie Nodjiadjim

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SHORT BIO

Presentations

InP DHBT technology at III-V Lab

On-Wafer TRL Calibration Kit Design for InP Technologies Characterization Up To 500 GHz

Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunction Bipolar Transistors

Recent advances in high-speed and large-swing integrated circuits implemented in InGaAs and GaAsSb InP DHBT for terabit-class optical communications

InP DHBT based Power Amplifiers for D-band (110 – 170 GHz) Wireless Communication Links

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