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Sameer Jain

GlobalFoundries

rf

millimeter-wave (mmwave)

5g

power amplifier (pa)

silicon on insulator (soi)

adnfet and cmos

hot-carrier

process-optimization

1

presentations

11

number of views

SHORT BIO

Sameer H. Jain (Member, IEEE) received his B. Tech degree from the Indian Institute of Technology, Bombay, India in 1998, the M.Sc and Ph.D. from Stanford University, Palo Alto, CA, USA in 2001 and 2005 repectively. He started his work at IBM SRDC in 2005. He lead the development of the Cu45 (45nm SOI ASICs), 20LP – a low power HiK Metal Gate bulk technology -- and 14HP – a high performance HiK Metal Gate FinFet on SOI technology. In 2015 he joined Globalfoundries Inc. Since 2016, he moved his focus to mmWave technologies, leading the development of the 45RFSOI offering a mmWave offering based on a 45nm SOI platform. He then led the development of a 2nd generation mmWave node called 45RFE and is current the chief technologist for Globalfoundries’ 45nm mmWave offerings. Dr. Jain was a recipient of the Stanford Graduate Fellowship in 2001 and has co-authored 22 technical papers and filed 14 patents.

Presentations

Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI

Sameer Jain and 11 other authors

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