**Please read the paper on the following link:**

https://1worldcontent.com/ess/9234.pdf

**Abstract:**

A broadband 3-stage pseudo-differential SiGe power amplifier, fabricated in an experimental 130 nm SiGe BiCMOS technology with ft/fmax of 470/650 GHz, is presented in this paper. Coupled-line matching networks with optimized impedance ratios are used to maximize bandwidth and output power while maintaing flat power gain and group delay for wireless communications applications. The amplifier provides a maximum small-signal power gain of 17.9 dB and a peak Psat/OP1dB of 6.7/5.2dBm, respectively. The measured small-signal and saturated power 3-dB bandwidth cover 59 GHz (239-298~GHz) and 89 GHz (226-315~GHz), respectively. The DC power consumption is about 417 mW, resulting in a power-added-efficiency of 0.92\\%. This power amplifier has the highest absolute small-signal bandwidth and highest output power in the J-Band for a silicon power amplifier without additional power combining. Without the balun at the input and output, the amplifier provides upto 8.1 dBm and a small-signal gain above 20 dB in an integrated differential circuit.

A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications

**Session Chairs:** Michele Caruso, Infineon; Patrick Reynaert, Katholieke Universiteit Leuven

D2L-6: Wideband Transmitter Circuits

technical paper

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ESSCIRC ESSDERC 2021

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





Holger Rücker

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A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications

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