Hojun Yoon received the B.S. degree in electrical engineering from the Pohang University of Science and Technology (POSTECH), Pohang, South Korea, in 2018. In 2018, he joined Samsung Electronics, Hwaseong, South Korea, where he has been involved in the design of next generation DRAM interface. His current research interests include high-speed interface circuits, clocking circuit, delay locked loop (DLL) and the next-generation memory architecture.