**Please read the paper on the following link:**

https://1worldcontent.com/ess/9033.pdf

**Abstract:**

Accurate split-CV mobility measurements require to overcome Bias Temperature Instabilities (BTI) which are a key issue in GaN-on-Si MOS-channel HEMTs. In this article, a rigorous methodology to extract the split-CV mobility as a function of the electron density and the temperature at Al2O3/GaN interface is depicted. Drain current ID(VG) and gate-to-channel capacitance CGC(VG) measurements are performed simultaneously under fast gate voltage ramp to prevent BTI. The voltage ramp enables fast CGC(VG) measurements and allows to bypass the frequency effect which can be observed when using small signal capacitance measurements. Thus, this technique paves the way to a reliable determination of intrinsic electron transport properties of GaN transistors.

Reliable Method for Low Field Temperature Dependent Mobility Extraction at Al2O3/GaN Interface

**Session Chairs:** Nadine Collaert, IMEC; Christoforos Theodorou, IMEP-LAHC Grenoble INP

E2L-5: GaN Technology & Characterization

technical paper

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ESSCIRC ESSDERC 2021

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





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