**Please read the paper on the following link:**

https://1worldcontent.com/ess/9211.pdf

**Abstract:**

We present a tunneling magnetoresistive (TMR) sensing microsystem consisting of a low flicker noise TMR sensor and a custom integrated readout frontend. The proposed sensor readout circuit introduces a novel ultra-low-noise current biasing scheme for the TMR sensor, which achieves a very low current noise floor of 2.2 pA/sqrt(Hz) for a 1mA biasing current. The TMR output voltage is processed by a differential readout scheme to improve the baseline-to-signal ratio. The microsystem also features an on-chip 10-bit current DAC that allows compensating for the large process variations in the TMR base resistance value. The readout chip is manufactured in a 180nm SOI CMOS technology and heterogeneously integrated with the TMR sensor. The readout chain provides a thermal noise floor of 4 nV/sqrt(Hz), while, together with the biasing scheme, consuming a total power of 38mW. The complete sensor system consisting of the TMR and the readout circuit provides a state-of-the-art magnetic field noise floor of 120 pT/sqrt(Hz).

A Readout Circuit for Tunnel Magnetoresistive Sensors Employing an Ultra-Low-Noise Current Source

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9123.pdf

**Abstract:**

We present a widely tunable transimpedance amplifier (TIA) with a dc servo loop and an optional bandwidth extension. All resistors are implemented as multi-element pseudo-resistors, which feature high linearity, robustness against process and temperature, and a very wide tuning range of more than five decades. The TIA features a noise floor of 0.6fA/sqrt(Hz) at its maximum transimpedance of 150GOhm and a bandwidth of 2.9MHz at its minimum transimpedance of 440kOhm. A subsequent inverting amplifier stage provides an optional pole-zero compensation to extend the TIA\'s overall bandwidth. An additional dc servo loop can be used to compensate large dc currents.

A 440-kOhm to 150-GOhm Tunable Transimpedance Amplifier Based on Multi-Element Pseudo-Resistors

**Session Chairs:** Viola Schaffer, Texas Instruments; Makoto Nagata, Kobe University

D1L-6: Analog Techniques

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
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* 3 keynote presentations ESSDERC
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Please register for the ESSCIRC conference to join the event.

ESSCIRC ESSDERC 2021

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





**Session Chairs:** Jens Anders, University of Stuttgart; Carolina Mora Lopez, IMEC;

Ayman Mohamed

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A Readout Circuit for Tunnel Magnetoresistive Sensors Employing an Ultra-Low-Noise Current Source

A 440-kOhm to 150-GOhm Tunable Transimpedance Amplifier Based on Multi-Element Pseudo-Resistors

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