**Please read the paper on the following link:**

https://1worldcontent.com/ess/9145.pdf

**Abstract:**

Low-temperature, low-resistive and gold-free Ta/Al-based ohmic contacts fabricated by sputtering on AlGaN/GaN-heterostructures are demonstrated on 150mm GaN-on-Si substrates using Ta/Al/TaN stacks annealed at 550°C, being suitable for integration of GaN-based devices in Si-platforms. The low-temperature annealing improves the sheet resistance thermal stability of heterostructures without passivation. Moreover, the weaker increase with temperature of the contact resistance given by the 2DEG-semiconductor-metal connection governed by tunneling for Au-free Ta/Al-based contacts, rather than the stronger temperature increase of the contact resistance given by the direct metal-2DEG connection for Au-containing Ti/Al-based contacts, results beneficial for HEMTs operating at high-temperature by reducing the on-resistance degradation.

Integration and Reliability Aspects of Low-Temperature and Au-Free Ta/Al-Based Ohmic Contacts for AlGaN/GaN MIS-HEMTs

**Session Chairs:** Nadine Collaert, IMEC; Christoforos Theodorou, IMEP-LAHC Grenoble INP

E2L-5: GaN Technology & Characterization

technical paper

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ESSCIRC ESSDERC 2021

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





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Integration and Reliability Aspects of Low-Temperature and Au-Free Ta/Al-Based Ohmic Contacts for AlGaN/GaN MIS-HEMTs

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