**Please read the paper on the following link:**

https://1worldcontent.com/ess/9197.pdf

**Abstract:**

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectricdielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

Polarization Switching and Interface Charges in BEOL Compatible Ferroelectric Tunnel Junctions

**Session Chairs:** Wladek Grabinski, MOS-AK Association; Viktor Sverdlov, Technische Universität Wien

D3L-5: Simulation & Modeling for Memory & Imaging Applications

technical paper

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ESSCIRC ESSDERC 2021

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





Riccardo Fontanini

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Polarization Switching and Interface Charges in BEOL Compatible Ferroelectric Tunnel Junctions

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