ABSTRACT Since 2003 the European Union has accelerated the immediate replacement of hazardous materials from consumer products, especially lead and lead-based systems from electrical and electronic equipment, by lead-free systems. However, inspite of significant research across the globe a suitable alternative to potential lead based system PZT has not been identified. Barium Calcium Zirconium Titanate (Ba0.89 Ca0.11 Zr0.10 Ti0.90) O3,is a promising lead free system which exhibit functional response at par or better than the prominent lead based systems like PZT or PMN-PT. In this report we will present our study primarily focussed on realization of BCZT ceramic by using sintering aid, which could bring down sintering temperature below 1400 oC, so that firing of the ceramic could be carried out at ordinary lab furnace. Structural and microstructural features of the synthesized ceramic BCZT – xPr (x = 0.00, 0.02,0.04, and 0.06) along with functional attributes will be analyzed in the presentation. Various steps taken to realize quality ceramic will be illustrated. The average piezoelectric constant d33 was obtained in the range of 144 – 150 pC/N and was lower than expected value. The dielectric maxima were observed near the Curie point as expected. Well defined slim ferroelectric hysteresis loop of BCZT – (x)Pr prepared with varying Pr6O11concentration indicates, the capability and stability of the ceramics at high voltage (3900 V) and frequency (50 Hz).The doped ceramic were found to be stable even at high voltage and high frequency and hence will be useful for diverse applications.

REALIZATION OF LOW TEMPERATURE SINTERED BCZT CERAMIC, THROUGH Pr DOPING AND RUDIMENTARY ANALYSIS

Recent years witnessed a significant volume of research for understanding the simple physics in photodetection and its applications in energy and sustainability. Photodetectors are useful in variety of applications from consumer electronic devices to industrial and environmental monitoring, flame and gas sensing, space communication, proximity sensors, missile technology etc to name a few. The possibility of engineerable band gap brought semiconducting TMDC MoS2 as one of the prominent among the 2D layered material family for photodetection and gas sensing applications. In my presentation, I will explain the structural and optical features of the MoS2/AlN heterostructure device fabricated through pulsed laser ablation. A few layers of MoS2 were grown on commercially procured and AlN templated Si wafer in an evacuated PLD chamber by ablating locally prepared MoS2 target with KrF excimer laser. Both photovoltaic and photothermal responses are to be analyzed to account for the observed intensity-modulated and wavelength-dependent photoswitching in MoS2/AlN heterostructures. The self-powered response obtained in the device was attributed to the large difference in band gap values of the complementary materials in the binary system, their band alignment, and band bending. Raman spectrum analysis, XPS, XRR, photodetection, etc will be presented to reveal the physical features and structural characteristics of the heterostructure. A detailed account of the photodetection and switching mechanism will also be discussed. 
Acknowledgment
Pius acknowledges the research grant TARE (TAR/2020/000241) by Science and Engineering Research Board (SERB), DST, Govt. of India to carry out research at Material Research Centre, Indian Institute of Science Bangalore.
Reference
[1] Clark, Jenny, and Guglielmo Lanzani. Nature Photonics 4, no. 7 (2010): 438-446.
[2] Fang, Huajing, Cheng Zheng, Liangliang Wu, Yi Li, Jian Cai, Mingxiang Hu, Xiaosheng Fang, Rong Ma, Qing Wang, and Hong Wang. Advanced Functional Materials 29, no. 20 (2019): 1809013.
[3]Lu, Xiaowei, Peng Jiang, and Xinhe Bao. Nature Communications 10, no. 1 (2019): 1-7.
[4][Singh Deependra Kumar, Rohit Pant, Arun Malla Chowdhury, Basanta Roul, Karuna Kar Nanda, and Saluru Baba Krupanidhi. ACS Applied Electronic Materials 2, no. 4 (2020): 944-953.


Photoswitching and self-powered response in PLD grown MoS2/AlN heterostructure photodetector

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SYM F - New Energy Conversion Materials II

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REALIZATION OF LOW TEMPERATURE SINTERED BCZT CERAMIC, THROUGH Pr DOPING AND RUDIMENTARY ANALYSIS

Photoswitching and self-powered response in PLD grown MoS2/AlN heterostructure photodetector

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