The heterogeneous integration of IIl-nitride materials with other semiconductor systems for electronic devices is attractive because it combines the excellent electrical properties of the Ill-nitrides with other device platforms. Pursuing integration through metalorganic chemical vapor deposition (MOCVD) is desirable because of the scalability of the technique, but the high temperatures required for the MOCVD growth of Ill-nitrides (>1000 °C) are incompatible with heteroepitaxy on some semiconductor systems and fabricated wafers. Thus it is critical to develop IIl-nitride films with good electrical properties at growth temperatures compatible with temperature sensitive substrates. High crystal quality GaN films with reduced impurity levels have been achieved at temperatures as low as 500 °C using pulsed growth methods such as atomic layer epitaxy and flow modulation epitaxy (FME). However, the electrical behavior of doped LT Ill-nitride films is relatively unexplored. In this work, thin Si-doped LT GaN films were grown at 550 °C by atmospheric pressure MOCVD using an FME scheme. Triethylgallium and ammonia were used as the GaN precursors and disilane as the Si dopant. Because of the very low growth rate (0.006 A/s), 1200 FME cycles resulted in approximately 16 nm-thick films. Two different FME Si-doping schemes were investigated. The first series varied the fraction of cycles in which disilane was injected into the growing film. Samples were grown with disilane injected every 20, 10, 5, 3, 2, and 1 cycle. The second series varied the disilane flow while using the standard frequency of disilane injection (1 in 5 cycles). Samples were characterized by Hall measurements and secondary ion mass spectrometry (SIMS). For the disilane injection series films, electron concentrations up to 6.97 x 4018 om”? were achieved, with electron mobilities from 34 to 119 cm vi sl The peak electron concentration was achieved for the sample with disilane injected in 1/3 of FME cycles during growth. The charge dropped off for samples with higher frequencies of disilane injection, likely because of degraded morphology. The Si concentrations measured by SIMS were somewhat higher than the electron concentrations measured by Hall. The background atmospheric impurity concentrations averaged 2.1 xX 1017 em’? for oxygen and 3.9 x 10 0 cm ~ for carbon, with no apparent dependence on Si concentration. The disilane flow series resulted in films with electron concentrations from 5.98 x 10 ~ cm ~ to 5.91 x 10'9 om”? and electron mobilities from 52 to 115 cm? vi s |, with the highest charge achieved with the highest disilane flow. The sheet resistance of this sample was 1068 Q/#, which is comparable to low resistance GaN films grown at high temperature, which range from 100-500 Q/#. These results demonstrate the potential for LT Ill-nitrides in electronics applications. This work supported in part by Intel Corporation and the Solid State Lighting and Energy Electronics Center.

High to Ultrahigh Si-Doped GaN Grown by Metalorganic Chemical Vapor Deposition at 550 °C for Heterogeneous Integration

III-Nitride Based LEDs and Laser Diodes

O: Group III-Nitrides—MOCVD Growth

technical paper

After two years of virtual conferences, we're excited to host EMC 2022 in person at The Ohio State University in Columbus, Ohio. In addition to cutting-edge technical presentations given in multiple parallel sessions, opportunities to network with colleagues will be present throughout the conference. The size and format of the meeting makes networking easy, whether you have been coming to the conference for many years or are a first-time attendee.

EMC is coordinated with the Device Research Conference (DRC), which will be held the same week, from June 26-29. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchange of information between attendees of both Conferences.

For information on the 80th Device Research Conference, please visit the DRC 2022 website.



EMC 2022

The Electronic Materials Conference (EMC) is the premier annual forum on the preparation, characterization and use of electronic materials. This year’s event will feature a plenary session, topical sessions, a poster session and more.



**Chairs:** Becky (R.L.) Peterson and Zhihong Chen

![](https://assets.underline.io/uploads/markdown_image/1/image/6e6bf514d62f9d8b785079bdad2f13b1.png)

**Speaker:** Philip Kim, Harvard University, USA

**Bio:**  Professor Philip Kim received his B.S in physics at Seoul National University in 1990 and received his Ph. D. in Applied Physics from Harvard University in 1999. He was Miller Postdoctoral Fellow in Physics from University of California, Berkeley during 1999-2001. He then joined in Department of Physics at Columbia University as a faculty member during 2002-2014. Since 2014, he moves to Harvard University, where he is Professor of Physics and Professor Applied Physics.

**Title of talk:**  Stacking van der Waals atomic layers: quest for new quantum materials 

**Brief Description of Your Work:**  By stacking these 2D quantum materials, one can also create atomic-scale heterostructures with a wide variety of electronic and optical properties. We demonstrate the enhanced electronic and optoelectronic performances in the vdW heterostructures, suggesting that these a few atom thick interfaces may provide a fundamental platform to realize novel physical phenomena. In this talk, we will discuss several research efforts to realize unusual quasiparticle pairing mesoscopic devices based on stacked vdW interfaces between 2-dimensional materials.



![](https://assets.underline.io/uploads/markdown_image/1/image/cf15574dcbf7cd0250c715d68a401096.png)

**Speaker:** Shuji Nakamura, University of California Santa Barbara, USA

**Bio:**  Shuji Nakamura obtained B.E., M.S., and Ph.D. degrees in Electrical Engineering from the University of Tokushima, Japan in 1977, 1979, and 1994, respectively. He joined Nichia Chemical Industries Ltd in 1979.  
In 1993 and 1995 he developed the first group-III nitride-based high-brightness blue and green LEDs. He also developed the first group-III nitride-based violet laser diodes (LDs) in 1995. 
Since 2000, he has been a professor of Materials and Electrical & Computer Engineering at the University of California, Santa Barbara. He is the 2014 Nobel Laureate in Physics for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources.

**Title of talk:**  III-Nitride Based LEDs and Laser Diodes

**Brief Description of Your Work:**  III-nitride-based ultra-short cavity micro-cavity (MC-)LED with a cavity length of 200 nm which had a peak external quantum efficiency (EQE) of 7.2% was demonstrated, which value is almost the same as that of a conventional c-plane micro-LED. The demonstration of MC-LEDs with a high EQE of 7.3% and a single mode emission should pave the way for the application of display and others. Current develoments of III-nitride based micro-LED and VCSEL are also mentioned.

Monday Plenary Session

keynote


**[DOWNLOAD THE DRC 2021 DIGEST](https://drive.google.com/file/d/17_-pkYf4IBbVuNYgohTf0iZJORVGp_uN/view?usp=sharing)**

**[DOWNLOAD A COPY OF THE FINAL DRC PROGRAM](https://drive.google.com/file/d/1Ek8UIDCowpLq0z2hXav5tn67FboxS03N/view?usp=sharing)**

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Given the ongoing global health concerns associated with COVID-19 (Coronavirus), the DRC leadership has decided to hold the 2021 Device Research Conference in a virtual (online) format. This follows an enormously successful 2020 DRC held virtually, in which we had record attendance and worldwide participation of more than 875 attendees from 33 countries.

The 2021 Conference will feature:

* Informative, timely short courses in rapidly developing fields
* Oral and poster presentations on electronic/photonic device experiments and simulations
* Plenary and invited presentations given by worldwide leaders
* Evening “rump” session
* Strong student participation and Student Paper Awards

DRC is held in coordination with the Electronic Materials Conference (EMC), which will occur the same week, from June 23-25. As has happened in person in past years, in 2021, the virtual DRC and EMC sessions on the shared day, Wednesday, June 23, will be open to all attendees from both conferences. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchanges of information between attendees of both Conferences. For information on the 63rd Electronic Materials Conference, please visit the [EMC 2021 website.](https://www.mrs.org/63rd-emc/)

2021 DRC individual presentation videos will become available in Underline at the end of each technical session. A recording of each full live session with Q&A will be posted later during the conference. To facilitate re-viewing of recorded talks and sessions, the DRC Underline site will remain open through 11:59pm (US EDT) on July 7th. DRC Conference registration will remain open at www.mrs.org/drc-2021/registration through June 30th.

Thank you for joining us at the 2021 Device Research Conference!

**General Chair**
<br>Zhihong Chen, Purdue University

**Technical Program Chair**
<br>Becky (R.L.) Peterson, University of Michigan

**Technical Program Vice-Chair**
<br>Gregg Jessen, BAE Systems

You can register for the 79th Device Research Conference with the following link. https://www.mrs.org/drc-2021

DRC 2021

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Shuji Nakamura

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High to Ultrahigh Si-Doped GaN Grown by Metalorganic Chemical Vapor Deposition at 550 °C for Heterogeneous Integration

III-Nitride Based LEDs and Laser Diodes

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