This research aims to make a substantial contribution to the field of photonics by synergistically exploring the utilization of innovative multiferroic materials while pushing the boundaries of photonic device design. Drawing upon a robust foundation of preliminary data from prior modeling endeavors, this research seeks to realize a practical optical switch through the intricate interplay between multiferroic materials and both electric and magnetic fields. The proposed Anisotropic Photonic Crystal Slab promises to achieve complete photonic band gaps across all polarizations, unlocking a realm of extraordinary phenomena including self-collimation, negative refraction, and zero-index refraction. 

The architecture of the photonic device is designed using the CrystalWave numerical simulation suite, which empowers calculations employing the 3D Finite-Difference Time-Domain (FDTD) method across both spatial and frequency domains, alongside the Plane Wave Expansion method. Advanced equipment such as the Direct Laser Writer and E-Beam Lithography will be employed to manufacture prototypes. 

The current phase of the investigation has yielded several promising photonic structures, with a select few demonstrating favorable attributes. In collaboration with students from the Department of Material Science and Engineering, various types of multiferroic nanoparticles suitable for this project have been fabricated. Presently, ongoing efforts involve the exploration of the alteration of dielectric constants within diverse polymer-multiferroic nanoparticle blends under the influence of electromagnetic fields. 

The proposed research stands poised to drive substantial progress in the realm of Photonics, delivering noteworthy contributions to the evolution of pioneering devices for optical computing while potentially extending its sphere of influence to other scientific domains. These include the advancement of sophisticated photonic solar sails and biosensors.

Exploring the synergy of light and matter interactions: Multiferroic photonic crystals for novel photonics applications

Silicon Carbide (SiC) is a wide bandgap semiconductor, which has been widely applied to power electronics due to its excellent properties of wide band gap, high break down voltage and thermal stability. However, defects, such as threading edge dislocations (TEDs), threading screw dislocations (TSDs) and basal plane dislocations (BPDs), can limit the performance of the devices [1,2], so characterization of those defects becomes a critical aspect to improve the quality of 4H-SiC wafers. Synchrotron monochromatic beam X-ray topography (SMBXT) is a powerful technique to characterize the defects with the advantages of large field of view and clear contrast of the defects. SMBXT in 11-28 reflection has been widely used, however, the penetration depth, around 17um [3], appears to be shallow to characterize device with deep PN junction. Therefore, a new reflection with deeper X-ray penetration depth and clear contrast on the defects has been sought for. 22-4 16 reflection, the harmonic reflection of 11-28, shows better contrast on the defects, higher strain sensitivity and deeper X-ray penetration. Contrasts from the same defect of 4H-SiC with 24 um epilayer in 11-28 and 22-4 16 reflections are compared as shown in Fig. 1. From 11-28 SMBXT, BPD segments near the surface of the wafer can be observed, as shown in the blue arrows in Fig 1(a), but contrasts of the segments lying deeper in the crystal are blurred as shown in the green boxes. On the other hand, in 22-4 16 SMBXT (Fig 1(b)), the contrasts of the full BPDs can be clearly seen and the contrasts of BPD segments lying deeper in the crystal are highlighted in green boxes to compare with contrasts in 11-28 reflection. This result also proves that the penetration depth of 22-4 16 SMBXT is deeper than that of 11-28 SMBXT. Previously we have simulated images of defects in 11-28, 0008 and 000 12 using the principle of ray tracing, showing good correlation with the topograph[4,5]. In this paper, we apply the ray tracing principle to simulate defect images in the 22-4 16 topograph and compare and discuss the contrast for the different defect types. Reference: [1] K. Konishi, R. Fujita, Y. Mori and A. Shima, Semiconductor Science and Technology 2018 Vol. 33 Issue 12 [2] W. Gao, G. Yang, Y. Qian, X. Han, C. Cui, Xi. Pi, D. Yang and R. Wang, Frontiers in Materials, Jan 2023, DOI:10.3389/fmats.2023.1022878 [3] Q. Cheng, H. Peng, S. Hu, Z. Chen, Y. Liu, B. Raghothamachar and M. Dudley, Materials Science Forum 1062, 366-370 [4] H. Peng, Z. Chen, Y. Liu, B. Raghothamachar, X. Huang, L. Assoufid and M. Dudley, J. Appl. Crystallogr. 55 (2022) 544-550. [5] H. Peng, Z. Chen, Y. Liu, Q. Cheng, S. Hu, X. Huang, L. Assoufid, B. Raghothamachar and M. Dudley

Ray Tracing Simulation of Defects of 4H-SiC in 22-4 16 Reflection of Synchrotron Monochromatic Beam X-Ray Topography in Grazing Incident Geometry

In recent years, oxide electronics has emerged as one of the most promising new technologies for a variety of electrical and optoelectronic applications, including next-generation displays, solar cells, batteries, and photodetectors. Oxide electronics have a lot of potential because of their high carrier mobilities and ability to be manufactured at low temperatures. However, the preponderance of oxide semiconductors is n-type oxides, limiting present applications to unipolar devices and stifling the development of oxide-based bipolar devices like p-n diodes and complementary metal-oxide—semiconductors. We have contributed to oxide electronics, particularly on transition metal oxide semiconductors of which the cations include In, Zn, Sn and Ga. We have integrated these oxide semiconductors into thin film transistors (TFTs) as active channel layer in light of the unique combination of electronic and optical properties such as high carrier mobility (5-10 cm“/Vs), optical transparency in the visible regime (>~90%) and mild thermal budget processing (200-400°C). In this study, we achieved four different results. The first result is that unlike several previous reports on oxide p-n junctions fabricated exploiting a thin film epitaxial growth technique (known as molecular beam epitaxy, MBE) or a high-powered laser beam process (known as pulsed laser deposition, PLD) that requires ultra-high vacuum conditions, a large amount of power, and is limited for large-area processing, we demonstrate oxide-based heterojunction p-n diodes that consist of sputter-synthesized p-SnOx and n-IGZO of which the manufacturing routes are in-line with current manufacturing requirements. The second result is that the synthesized p-SnOx films are devoid of metallic Sn phases (i.e., sn? state) with carrier density tuneability and high carrier mobility (> 2 cm2/Vs). The third result is that the charge blocking performance of the metallurgical junction is significantly enhanced by the engineering of trap/defect density of n-IGZO, which is identified using photoelectron microscopy and valence band measurements. The last result is that the resulting oxide-based p-n heterojunction exhibits a high rectification ratio greater than 10° at +3 V (highest among the sputter-processed oxide junctions), a low saturation current of ~2x10 © A, and a small turnon voltage of ~0.5 V. The outcomes of the current study are expected to contribute to the development of p-type oxides and their industrial device applications such as p-n diodes of which the manufacturing routes are in-line with the current processing requirements. Reference: 1. Lee, S.; Paine, D. C., Metallization selection and the performance of amorphous In-Zn-O thin film transistors. Applied Physics Letters 2014, 104 (25), 252103. 2. Liu, M.; Kim, H.; Wang, X.; Song, H. W.; No, K.; Lee, S., Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors. ACS Applied Electronic Materials 2021, 3 (6), 2703-2711. 3. Chu, X., Zhuang, S., Chi, C., Xu, H., Du, G., Dong, X., & Yin, J. (2017). Study on the electroluminescence properties of the P-nimgo:Li/mgo/n-zno nanowires/ito heterojunction. Journal of Luminescence, 187, 486-491. 4. Kawazoe, H.; Yanagi, H.; Ueda, K.; Hosono, H., Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions. MRS Bull. 2000, 25 (08), 28-36. 5. Mo, X., Fang, G., Long, H., Li, S., Wang, H., Chen, Z., Huang, H., Zeng, W., Zhang, Y., & Pan, C. (2014). Unusual electroluminescence from n-ZnO@i-MgO core-shell nanowire color-tunable light-emitting diode at reverse bias. Phys. Chem. Chem. Phys., 16(20), 9302-9308. 6. Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H., Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432 (7016), 488-492.

Facile Processing and Properties of P-Type SnOx and Oxide-Based p-n Heterojunction Application with n-InGaZnO

Reliable and controllable growth of two dimensional hexagonal boron nitride (h-BN) is essential for its wide range of applications. Here, we carried out molecular beam epitaxy (MBE) growth of monolayer h-BN on nickel (Ni) substrates by using ammonia (NH) and boron oxide (B04) as the sources. It was found that compared with normal growth of h-BN by introducing the NH, and B,0., source at the same time, the pretreatment with B,0, greatly inhibited the following epitaxial growth of h-BN. With the increase of B,0, pretreatment time and then followed by 15 min h-BN growth, the coverage of h-BN exhibited an exponential decay relationship with the treatment time. The samples were analyzed using depth-profiling X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). The oxygen/Ni peak intensity ratios derived from the XPS showed that the oxygen concentration increased with the increase of B,0, pretreatment time from the surface while decreased gradually with the increase of XPS sputtering depth. Meanwhile, boron incorporation was negligible regardless of treatment time. The epitaxial relationship was studied by using h-BN coverage-dependent RHEED analysis, obtained on samples including Ni substrate after annealing only, Ni substrate with BAO pretreatment, h-BN samples with the B,03 pretreatment and subsequent 50%, and 100% film coverage. Only two sets of patterns were observed and separated by 30, confirming that there is no in-plane rotation between the h-BN and Ni (111) surface. The oxygen incorporated into the Ni substrate not only suppressed h-BN nucleation by passivating the Ni surface active sites, but also decreased the growth rate of single crystal h-BN domains, shifting from larger sizes to smaller shapes. Detailed structural, optical and electrical characterizations of these monolayer h-BN films will also be presented. Our work reveals the influence of oxygen on the catalytic effect of Ni in the MBE growth of monolayer h-BN and provides an efficient way to control the morphology and quality of the 2D h-BN films.

Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride on Nickel Substrates Incorporated with Oxygen Atoms

Two-dimensional (2D) materials and their heterostructures are promising for memristive applications due to their extreme scalability and high performance.1 Threshold switching in 2D-Transition Metal Dichalcogenide (TMDC) memristors has been previously identified for neuromorphic applications.2 On the other hand, accurate control of defect concentration in 2D-TMDC films is necessary for optimized performance of the memristive devices. In this work, we explore a chemical route to control defect concentration in 2D-MoS2 films. We demonstrate that the defect concentration in 2D-MoS2 can be tuned by H2O2 treatment. We then optimize the resistance switching behavior of Au/MoS2/Ag/Au memristors to obtain reliable threshold resistance switching with high on/off ratio, low operating voltages and self-compliance behavior. This work offers promise for a low-cost, scalable approach to develop 2D-TMDC based high-performance neuromorphic hardware.

Controllable Defect Engineering in 2D-MoS2 for high-performance threshold switching memristive devices

The frustrated quantum spin systems exhibit various exotic magnetic phenomena. One of interesting phenomena is the magnetization plateau, which corresponds to the quantization of the magnetization. The S=1/2 distorted diamond spin chain is a typical one-dimensional frustrated systems. The previous theoretical study, using the numerical diagonalization of finite-size culsters and the level spectroscopy analysis[1], indicated the S=1/2 distorted diamond spin chain can exhibit the 1/3 magnetization plateau due to two different mechanisms, depending on the ratio of the exchange interactions. Azurite Cu3(OH)2(CO3)2 is a good candidate material of the distorted diamond spin chain. The high-field magnetization measurement successfully revealed that azurite exhibits the 1/3 magnetization plateau[2]. Recently as another good candidate material alumoklyuchevskite K3Cu3AlO2(SO4)4 was discovered[3]. In this compound ferromagnetic exchange interactions exist as well as antiferromagnetic ones, while azurite has only antiferromagnetic ones. On the other hand, if the anisotropic ferromagnetic interaction is introduced to the distorted diamond spin chain, another mechanism of the 1/3 magnetization plateau would be expected, based on the previous theoretical study on the mixed spin chain[4]. Thus it would be interesting to study the model of the distorted diamond spin chain with the anisotropic ferromagnetic interaction, to consider the magnetization plateau. In the present work, we investigated this model using the numerical diagonalization and the level spectroscopy analysis and obtained the phase diagram at 1/3 of the saturation magnetization, which includes the plateau phase due to a new mechanism for the distorted diamond spin chain.

Magnetization Plateau of the Distorted Diamond Spin Chain with Anisotropic Ferromagnetic Interactions

Dipolar Spin Ices (DSI) are geometrically frustrated magnetic materials, where the moments are arranged on the sites of a pyrochlore lattice [1]. The ground-state obeys the ice-rule, where two magnetic moments point to the center of the tetrahedral unit cell and two point out. If the rule is broken, i.e. one moment is switched, a net magnetic charge is observed at the center of the tetrahedron, referred to as magnetic monopoles. The trace of the switched magnetic moments is referred to as a Dirac string, which has magnetic monopoles at its ends. However, these materials require cryogenic conditions for the stability of monopoles. To study the magnetic monopoles on more suitable platform, artificial spin ices (ASI) consisting of elongated magnetic islands were considered [2]. Their 2D nature lifts the degeneracy of the ground state, as not all ice-rule obeying vertices have equal energies. Due to this differentiation between energetic states of the vertices, the Dirac strings bind the monopoles and store energy, limiting the mobility within the lattice. Here, we combine the advantages of DSI and 2D ASI, and present a 3D ASI lattice [3], where 3D ellipsoids with nearly perfect ising behavior are arranged on an Ice Ih crystal, where the angle between the ellipsoids is always θ = 109.5°, see Fig. 1. This symmetry recovers the lifted degeneracy of the ground state and enables tension-free Dirac strings. Based on the definitions of unbound magnetic monopoles [4], we show that the mobility threshold for magnetic charges is by 2 eV lower than their unbinding energy, while the propagation barrier is constant. The energy of the system does not increase with the length of the Dirac string, showing its tension-free nature. Furthermore, we apply external global fields and steer one magnetic monopole in the desired direction without creating additional magnetic charges, see Fig. 2. Finite temperature micromagnetic analysis reveals that the magnetic monopoles within the 3D ASI lattice are stable and steerable at room temperature.

![](https://assets.underline.io/uploads/markdown_image/1/image/7329a0465c413b41f6b95412aa66de49.jpg)

Fig.1: 3DASI lattice with 3D and top view.

![](https://assets.underline.io/uploads/markdown_image/1/image/ebc78830ac4545aedb5992bd9d0f1124.jpg)

Fig. 2: Averaged magnetization and applied field with respect to time, and the schematic magnetic configurations before and after propagation of monopole.

Tension-free Dirac Strings and Steered Magnetic Charges in 3D Artificial Spin Ice

Lithographically patterned arrays of magnetostatically interacting nanostructures are now well-established tools for investigating the physics of frustrated magnets [1]. Reaching a low-energy manifold where intriguing phenomena occur is challenging experimentally, and the effective temperature of the system under study must be lowered efficiently. So far, two main approaches were used in practice. Either the artificial systems are rotated in a decaying magnetic field [2], or their magnetization dynamics are activated by a thermal treatment [3]. Even though both protocols were employed successfully in previous works, there is a fundamental difference between them. If one can intuitively understand that thermal fluctuations may be a source of stochasticity, one might wonder whether field demagnetization protocols are not instead a source of determinism, especially when the experiments are conducted well below the blocking or Curie temperature of the nanomagnets. The main purpose of this presentation is to answer the following questions: What happens if the very same athermal lattice is field demagnetized several times? Would we get the same arrested state repeatedly and deterministically, or are the successive arrested configurations statistically decorrelated because stochasticity drives the physics? Here we investigate the response of an athermal, artificial square ice [4] submitted to successive field demagnetization protocols. We show that each resulting magnetic state differs substantially from the previous one, but not entirely. Analyzing these states via spin and vertex density maps, we find that the field demagnetization protocol we apply is essentially a stochastic process, despite quenched disorder, which is unambiguously present in our arrays, acts as a source of determinism. We also provide a comparison with conventional two-dimensional square spin system [2] submitted to the very same field history and show that quenched disorder plays a less important role. Finally, we demonstrate that the spin and vertex density maps are a convenient tool to probe and reveal quenched disorder in an artificial spin system, as they allow to spot the regions that remain unaffected between successive field protocols.

Is a field demagnetization protocol applied to an a priori athermal, artificial square ice magnet, a stochastic process?

Cu-based hybrid organic-inorganic perovskites represent an intriguing class of quasi-two-dimensional layered materials. They are well known to behave as nearly ideal two-dimensional (2D) Heisenberg magnets, making them potentially suited for spintronic applications. However, the nature of spin wave propagation in these materials and how it is affected by the presence of various anisotropic exchange contributions warrants further investigation. Here we examine the static and dynamic magnetic properties of (C6H5CH3CH2NH3)2CuCl4, (S-C6H5CH3CH2NH3)2CuCl4, (C8H9NH3)2CuCl4, and (C6H5CH3CH2NH3)2CuBr4 single crystals using SQUID magnetometry and ferromagnetic resonance (FMR) spectroscopy, respectively. Static magnetization and susceptibility measurements reveal the effects of organic cation and halide substitution on critical ordering behavior. Dynamic FMR measurements show spin wave propagation in the paramagnetic region above the critical temperature as a result of strong intralayer exchange coupling.

Static and Dynamic Magnetic Properties of Cu-Based Organic-Inorganic Hybrid Perovskite Single Crystals

Long before the recent fascination with 2D materials, the critical behavior and universality scaling of phase transitions in low-dimensional systems was a topic of great interest. Particularly intriguing is the case of magnetic order in two dimensions, once excluded in systems with continuous symmetry by the Hohenberg-Mermin-Wagner theorem. While an out-of-plane anisotropy has been shown to lift this restriction and stabilize magnetic order in van der Waals monolayers -as demonstrated in CrI3, CrBr3 and Fe3GeTe2- [1], this proof has remained elusive for a 2D magnet with in-plane rotational symmetry. In this presentation, we highlight the discovery of such an atomically-thin easy-plane system, namely a CrCl3 monolayer on Graphene/6H-SiC (0001) grown by molecular-beam epitaxy. Employing in-situ X-ray magnetic circular dichroism, we demonstrate intrinsic ferromagnetic ordering in the monolayer with a critical scaling characteristic of a 2D-XY system [2]. We highlight the role of the in-plane hexagonal crystalline symmetry and negligible substrate interaction to attain an ideal easy-plane (XY) instead of the more ubiquitous easy-axis (Ising) behaviour. These observations point towards the first realization of a finite-size Berezinskii-Kosterlitz-Thouless (BKT) phase transition in a large-area, quasi-freestanding monolayer magnet with a XY universality class; and further constitutes a suitable platform to study exotic phenomena inherent of easy-plane magnets, like superfluid spin transport or in-plane topological spin textures such as merons.

![](https://assets.underline.io/uploads/markdown_image/1/image/4377cea9c0aad6be1933c4cfdb831960.jpg)

Schematic crystal structure of CrCl3/Graphene/6H-SiC layers in top view and cross-section configurations, along with the in-situ RHEED pattern of monolayer CrCl3 grown by on the Graphene substrate, along Γ-M direction. On the right, the atomically resolved STM image of the CrCl3 monolayer results in a moiré pattern from the superposition of hexagonal unit cells of CrCl3 and graphene. The Fourier-transformed image yields a twist angle of 23.8 degree.

![](https://assets.underline.io/uploads/markdown_image/1/image/65ce4e4a29ae04b4d066d19641ce963e.jpg)

XMCD values at zero magnetic field (remanence) as a function of temperature. The critical scaling fit close to the phase transition is shown, determining the exponent β=0.227, consistent with a 2DXY magnetic universality class.

Recent developments of magnetism in flatland: Discovery of Intrinsic 2D-XY Ferromagnetism in a van der Waals Monolayer

Square root topological lattice models such as the non-Hermitian 1D Su-Schrieffer-Heeger (SSH) model [1] and the 2D honeycomb lattice [2, 3] have recently been introduced and realised in several platforms [4, 6]. The recipe for the square root construction has paved the way for 2n root models [7], in which the transition from higher to lower roots can be readily made due to the arborescent structure of the resultant lattice by taking the n-th power of the corresponding Hamiltonian ((Hroot)n) and subtracting a constant energy. The present method is only applicable for the square root operation. Here, we introduce a new procedure which enables us to realise any arbitrary n-th root of the lattice, including prime number roots, by simply adding n-1 new sites between two parental sites such that the new directional couplings create a closed loop in either the clockwise or anti-clockwise directions (Fig. 1a). While the Hermiticity is preserved in square root operations, the non-reciprocal couplings in the n-th root method require breaking the Hermiticity so that the arborescent construction can be followed to form (Hroot)n as the direct sum of Hparental and Hresidual where Hparental is the original lattice Hamiltonian, which is topologically non-trivial [8], and Hresidual represents the direct sum of all the residual parts. This form allows us to transition between roots (Fig. 1b) without the need for a constant energy shift in every operation (Fig. 2). Every root operation results in a multiplication of the energy band structure, which depends on the degree of the root. This multiplication in energy also results in the multiplication of the topological states. In contrast to conventional TIs, the n-th root version of the topological lattices possesses multiple topological mid-gap states with finite energy as well as non-Hermitian phenomenon such as the non-Hermitian skin effect, which may be useful for various potential applications such as magnetic sensing due to the extensive sensitivity and robustness of the topological states.

![](https://assets.underline.io/uploads/markdown_image/1/image/7985dfc21e709bda9aa9472f8edf38c1.jpg)

Illustration of systematic shifting between (SSH)1/n lattices.

![](https://assets.underline.io/uploads/markdown_image/1/image/c228455f335d23670adca71013893745.jpg)

Real energy spectrum as a function of site index of cubic root (3n) SSH model with 1 unit cell, the transition from n=3 to n=0.

N-th Root Topological Lattices

Topolectrical (TE) circuits have not only bridged the seemingly different disciplines of electrical circuits and topological condensed matter but also allowed the realization of highly tunable lattice systems with desired topological properties based on the parameters of the corresponding TE circuit lattices [1, 2]. The frequency dependence of the electrical inter-node couplings (i.e., the admittance of capacitors and inductors) suggests that the circuits can be switched between the insulating, semimetallic, and Chern insulator phases by varying the frequency of the alternating signal [3]. Here, we propose a TE circuit lattice that exhibits this switching within a single circuit set-up. We consider a 2-dimensional (2D) TE circuit containing two types of nodes A and B (Fig. 1a) with complex nearest-neighbor couplings (combination of capacitive and resistive) realized via negative impedance converters (NICs) (Fig. 1b) and capacitive next-nearest neighbor (NNN) couplings. The critical frequency of the circuit depends only on the grounding inductor and NNN capacitor (Fig. 1c). In the absence of resistive coupling, the TE circuit respects time-reversal symmetry (TRS) and hosts insulating and semimetallic phases when the frequency is less than, and greater or equal to the critical frequency, respectively. Furthermore, the 2D Weyl points in the semimetallic phase are connected by topological edge states in the admittance spectra (Fig. 2b,e). However, a non-zero Rd breaks TRS and a bulk bandgap appears. Chiral edge states emerge under open boundary conditions and the circuit exhibits the quantum anomalous Hall effect at ω &gt; ωc (Fig. 2f). Moreover, the Chern number of the system changes signs when the frequency crosses the critical value.

![](https://assets.underline.io/uploads/markdown_image/1/image/335a98dd245cf287b314d00c26f10710.jpg)

a. Schematic of frequency-dependent Chern circuit. b. NIC and grounding connections. c. System Hamiltonian and critical frequency.

![](https://assets.underline.io/uploads/markdown_image/1/image/c73aa987cfe48dc4e49ba3714769b396.jpg)

a-f. Admittance dispersion of a finite system at different frequencies. The top and bottom rows correspond to zero and non-zero resistive couplings, respectively. Common parameters: C1=1.5 mF, C2=1 mF and Lm=1 nH.

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Exploring the synergy of light and matter interactions: Multiferroic photonic crystals for novel photonics applications

Ray Tracing Simulation of Defects of 4H-SiC in 22-4 16 Reflection of Synchrotron Monochromatic Beam X-Ray Topography in Grazing Incident Geometry

Facile Processing and Properties of P-Type SnOx and Oxide-Based p-n Heterojunction Application with n-InGaZnO

Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride on Nickel Substrates Incorporated with Oxygen Atoms

Controllable Defect Engineering in 2D-MoS2 for high-performance threshold switching memristive devices

Magnetization Plateau of the Distorted Diamond Spin Chain with Anisotropic Ferromagnetic Interactions

Tension-free Dirac Strings and Steered Magnetic Charges in 3D Artificial Spin Ice

Is a field demagnetization protocol applied to an a priori athermal, artificial square ice magnet, a stochastic process?

Static and Dynamic Magnetic Properties of Cu-Based Organic-Inorganic Hybrid Perovskite Single Crystals

Recent developments of magnetism in flatland: Discovery of Intrinsic 2D-XY Ferromagnetism in a van der Waals Monolayer

N-th Root Topological Lattices

AC Frequency Modulated Phase Transitions in Topolectrical Circuits

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