United States

IEEE WiPDA 2022

GaN power devices: current Status, challenges, and emerging technologies

**[DOWNLOAD THE DRC 2021 DIGEST](https://drive.google.com/file/d/17_-pkYf4IBbVuNYgohTf0iZJORVGp_uN/view?usp=sharing)**

**[DOWNLOAD A COPY OF THE FINAL DRC PROGRAM](https://drive.google.com/file/d/1Ek8UIDCowpLq0z2hXav5tn67FboxS03N/view?usp=sharing)**

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Given the ongoing global health concerns associated with COVID-19 (Coronavirus), the DRC leadership has decided to hold the 2021 Device Research Conference in a virtual (online) format. This follows an enormously successful 2020 DRC held virtually, in which we had record attendance and worldwide participation of more than 875 attendees from 33 countries.

The 2021 Conference will feature:

* Informative, timely short courses in rapidly developing fields
* Oral and poster presentations on electronic/photonic device experiments and simulations
* Plenary and invited presentations given by worldwide leaders
* Evening “rump” session
* Strong student participation and Student Paper Awards

DRC is held in coordination with the Electronic Materials Conference (EMC), which will occur the same week, from June 23-25. As has happened in person in past years, in 2021, the virtual DRC and EMC sessions on the shared day, Wednesday, June 23, will be open to all attendees from both conferences. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchanges of information between attendees of both Conferences. For information on the 63rd Electronic Materials Conference, please visit the [EMC 2021 website.](https://www.mrs.org/63rd-emc/)

2021 DRC individual presentation videos will become available in Underline at the end of each technical session. A recording of each full live session with Q&A will be posted later during the conference. To facilitate re-viewing of recorded talks and sessions, the DRC Underline site will remain open through 11:59pm (US EDT) on July 7th. DRC Conference registration will remain open at www.mrs.org/drc-2021/registration through June 30th.

Thank you for joining us at the 2021 Device Research Conference!

**General Chair**
 Zhihong Chen, Purdue University

**Technical Program Chair**
 Becky (R.L.) Peterson, University of Michigan

**Technical Program Vice-Chair**
 Gregg Jessen, BAE Systems

You can register for the 79th Device Research Conference with the following link. https://www.mrs.org/drc-2021

DRC 2021

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

tutorial

Download the proceedings [here](https://underline.io/events/372/lounge)
 
 
 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

You must register to attend this event. If you haven't done so already, please use the link below to register for the event. All registered attendees will have access to the event site on November 4th.

Registration Is Required

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

In this paper, an implantation-free 3 kV 4H-SiC Bipolar Junction Transistor (BJT) is designed, fabricated, and characterized. With a 40μm-wide Four-step Junction Termination Extension (JTE), an open base breakdown voltage (BVCEO) and an open emitter breakdown voltage (BVCBO) of more than 3000V are measured. The total width of the JTE is less than two times of the drift thickness (23μm), which can be considered as highly area efficient. The designed BJT has a 1.2μm narrow base width with 1×1017cm-3 doping, where implantation-free Ohmic contact was achieved. The BJT exhibits an excellent on-resistance of 6.7mΩ·cm2 for small size device and an on-resistance of 39.7mΩ·cm2 for large size device. The measured current gain for devices with additional anneal process is 21.

3kV 6.7MΩ·cm² 4H-SiC BJT with an Effective Junction Termination Extension (JTE)

High-speed and intelligent gate driver is the critical interface between power semiconductor devices and control signals to achieve low switching loss and intelligent protection. The proposed novel Source Turn-Off (STO) MOSFET is a driver integrated MOSFET architecture that can achieve ultra-fast turnon and turn-off operation beyond traditional voltage source gate driver approach. 1200V SiC STO half bridge was developed to demonstrate the concept. Faster switching speed and lower switching losses are demonstrated. The STO can be readily realized by using commercially available Si power MOS IC which can further enable intelligent functionalities such as build-in current monitoring, temperature monitoring and over current protection which are important for high power SiC modules.

Source Turn-Off (STO) MOSFET: A New Driving Architecture for Smart SiC Module

Wide-bandgap GaN devices are emerging as promising candidates for high switching frequency, highvoltage applications, and high-temperature operation in smart power conversion systems. This work introduces a monolithic GaN MIS-HEMT-based voltage reference consisting of two transistors (2T), a D-mode and an E-mode device. Experimental results have been obtained that a 2.5 V reference voltage (VREF) is produced for a supply voltage ranging from 5 to 50 V, achieving a maximum VREF line sensitivity of 0.065%/V and a temperature coefficient of 24.6~28.6 ppm/°C from −25 to 225 °C. This structure also shows competitive levels of uniformity, power consumption and flexibility. With the superior characteristics of the GaN device, the presented results will provide stable reference voltage in various sensing and biasing circuits, especially for GaN power ICs.

A 5 to 50 V, −25 to 225 °C, 0.065%/°C GaN MISHEMT Monolithic Compact 2T Voltage Reference

Bidirectional High Voltage Conversion Ratio High-Frequency DC/DC Converter with Low Number of Components

The wide-band gap devices can switch at a higher frequency with a higher dV/dt well as improve switching performance. The optimization of busbars can reduce the power loop parasitic which will reduce the overvoltages during the device’s state transient. Busbar is not only required to carry and distribute the current to the power module, but also need to provide a path for decouple the high-frequency current ringing and minimize the impact of high-frequency current coupling. This paper introduced a workflow of a high power three-phase inverter design by considering the power converter layout to achieve the maximum power and , and a compara

Busbar Design and Optimization for High Power Three-Phase Inverter with WBG Device

Application of wide band gap (WBG) devices in power electronics converters enable high frequency and high-speed operation, together with reduced conduction losses. Gallium-Nitride (GaN) devices are more promising as they offer low chip area, and stable variation of channel resistance. Such devices can be employed in current source inverters (CSI) where two of them need to be connected in anti-series to make a reverse voltage blocking (RVB) switch. RVB switches are not only important in CSIs, but also find their applications in matrix converters, high voltage DC circuit breakers and T-type voltage source inverters. This paper discusses a switching event comprising of turn-on and turn-off phenomenon in RVB switch. Since the impact of layout parasitic onto gate drivers has been a common issue for GaN based converters, the paper presented a switching events, and discussed all the contributors which help or worsen the driving of bi-directional switches.

Analysis of a Switching Event and Its Impact on Gate Drive in Gallium-Nitride Based Bi-Directional Switches

Embedding diagnostic and prognostic into power electronics has the potential to increase the reliability and resiliency of and increasing automated adaptability in variable operating conditions has increased the reliability and resiliency of these systems, especially with the transition to wide bandgap semiconductors where higher voltages, lower on-state resistances, and faster switching speed can lead to rapid failures under conditions such as shoot through. This value proposition requires minimally invasive sensing elements that provide real-time monitoring of online system operations such that parasitic values are not introduced, which erode performance. Presented is an insitu current sensing circuit with integration to the controller to provide enhanced operational capabilities such as submicrosecond short circuit protection and power semiconductor device on-state resistance measurement. Techniques developed for measurement and protection are not limited to the tested SiC devices and may be extended to numerous types of critical components. These techniques can provide detailed, real-time state of health estimation for critical components and system capabilities, thus, enhancing system reliability.

In-Situ Ultrafast Sensing Techniques for Prognostics and Protection of SiC Devices

The transformer flux unbalance in dual-activebridge (DAB) converters is a critical issue due to the electrical parameter and modulation mismatch, and load or control transients. Compared to low voltage DAB converters, the unbalance problem in medium voltage DAB converters may cause more severe problem, and become more difficult to deal with, because of the high operating voltage and insulation requirement. In this paper, a flux balancing strategy for a medium voltage (MV) DAB converter is proposed, including the transformer design with ferrite gap, current harmonic-based unbalance detection, as well as the flux balancing control scheme. With the proposed ferrite gap, nonlinear magnetizing current and its modeling are induced. Then, by analyzing the current harmonics, the flux unbalance level can be detected, and hence controlled. Test results have verified the proposed method in a MV DAB converter.

Premium content

GaN power devices: current Status, challenges, and emerging technologies

Downloads

Next from IEEE WiPDA 2022

3kV 6.7MΩ·cm² 4H-SiC BJT with an Effective Junction Termination Extension (JTE)

Similar lecture

Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES