United States

IEEE WiPDA 2022

Bidirectional High Voltage Conversion Ratio High-Frequency DC/DC Converter with Low Number of Components

coupled inductor based

input current ripple cancellation

high-voltage-gain

non-isolated

bidirectional dc-dc converter

high frequency

**[DOWNLOAD THE DRC 2021 DIGEST](https://drive.google.com/file/d/17_-pkYf4IBbVuNYgohTf0iZJORVGp_uN/view?usp=sharing)**

**[DOWNLOAD A COPY OF THE FINAL DRC PROGRAM](https://drive.google.com/file/d/1Ek8UIDCowpLq0z2hXav5tn67FboxS03N/view?usp=sharing)**

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Given the ongoing global health concerns associated with COVID-19 (Coronavirus), the DRC leadership has decided to hold the 2021 Device Research Conference in a virtual (online) format. This follows an enormously successful 2020 DRC held virtually, in which we had record attendance and worldwide participation of more than 875 attendees from 33 countries.

The 2021 Conference will feature:

* Informative, timely short courses in rapidly developing fields
* Oral and poster presentations on electronic/photonic device experiments and simulations
* Plenary and invited presentations given by worldwide leaders
* Evening “rump” session
* Strong student participation and Student Paper Awards

DRC is held in coordination with the Electronic Materials Conference (EMC), which will occur the same week, from June 23-25. As has happened in person in past years, in 2021, the virtual DRC and EMC sessions on the shared day, Wednesday, June 23, will be open to all attendees from both conferences. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchanges of information between attendees of both Conferences. For information on the 63rd Electronic Materials Conference, please visit the [EMC 2021 website.](https://www.mrs.org/63rd-emc/)

2021 DRC individual presentation videos will become available in Underline at the end of each technical session. A recording of each full live session with Q&A will be posted later during the conference. To facilitate re-viewing of recorded talks and sessions, the DRC Underline site will remain open through 11:59pm (US EDT) on July 7th. DRC Conference registration will remain open at www.mrs.org/drc-2021/registration through June 30th.

Thank you for joining us at the 2021 Device Research Conference!

**General Chair**
 Zhihong Chen, Purdue University

**Technical Program Chair**
 Becky (R.L.) Peterson, University of Michigan

**Technical Program Vice-Chair**
 Gregg Jessen, BAE Systems

You can register for the 79th Device Research Conference with the following link. https://www.mrs.org/drc-2021

DRC 2021

poster

Download the proceedings [here](https://underline.io/events/372/lounge)
 
 
 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

You must register to attend this event. If you haven't done so already, please use the link below to register for the event. All registered attendees will have access to the event site on November 4th.

Registration Is Required

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

The wide-band gap devices can switch at a higher frequency with a higher dV/dt well as improve switching performance. The optimization of busbars can reduce the power loop parasitic which will reduce the overvoltages during the device’s state transient. Busbar is not only required to carry and distribute the current to the power module, but also need to provide a path for decouple the high-frequency current ringing and minimize the impact of high-frequency current coupling. This paper introduced a workflow of a high power three-phase inverter design by considering the power converter layout to achieve the maximum power and , and a compara

Busbar Design and Optimization for High Power Three-Phase Inverter with WBG Device

Application of wide band gap (WBG) devices in power electronics converters enable high frequency and high-speed operation, together with reduced conduction losses. Gallium-Nitride (GaN) devices are more promising as they offer low chip area, and stable variation of channel resistance. Such devices can be employed in current source inverters (CSI) where two of them need to be connected in anti-series to make a reverse voltage blocking (RVB) switch. RVB switches are not only important in CSIs, but also find their applications in matrix converters, high voltage DC circuit breakers and T-type voltage source inverters. This paper discusses a switching event comprising of turn-on and turn-off phenomenon in RVB switch. Since the impact of layout parasitic onto gate drivers has been a common issue for GaN based converters, the paper presented a switching events, and discussed all the contributors which help or worsen the driving of bi-directional switches.

Analysis of a Switching Event and Its Impact on Gate Drive in Gallium-Nitride Based Bi-Directional Switches

Embedding diagnostic and prognostic into power electronics has the potential to increase the reliability and resiliency of and increasing automated adaptability in variable operating conditions has increased the reliability and resiliency of these systems, especially with the transition to wide bandgap semiconductors where higher voltages, lower on-state resistances, and faster switching speed can lead to rapid failures under conditions such as shoot through. This value proposition requires minimally invasive sensing elements that provide real-time monitoring of online system operations such that parasitic values are not introduced, which erode performance. Presented is an insitu current sensing circuit with integration to the controller to provide enhanced operational capabilities such as submicrosecond short circuit protection and power semiconductor device on-state resistance measurement. Techniques developed for measurement and protection are not limited to the tested SiC devices and may be extended to numerous types of critical components. These techniques can provide detailed, real-time state of health estimation for critical components and system capabilities, thus, enhancing system reliability.

In-Situ Ultrafast Sensing Techniques for Prognostics and Protection of SiC Devices

The transformer flux unbalance in dual-activebridge (DAB) converters is a critical issue due to the electrical parameter and modulation mismatch, and load or control transients. Compared to low voltage DAB converters, the unbalance problem in medium voltage DAB converters may cause more severe problem, and become more difficult to deal with, because of the high operating voltage and insulation requirement. In this paper, a flux balancing strategy for a medium voltage (MV) DAB converter is proposed, including the transformer design with ferrite gap, current harmonic-based unbalance detection, as well as the flux balancing control scheme. With the proposed ferrite gap, nonlinear magnetizing current and its modeling are induced. Then, by analyzing the current harmonics, the flux unbalance level can be detected, and hence controlled. Test results have verified the proposed method in a MV DAB converter.

A Flux Balancing Strategy for 10-kV SiC-Based Dual-Active-Bridge Converter

This paper presents the initial evaluation of a 3.3- kV, SiC MOSFET power module (not fully populated) from Wolfspeed, including static, short circuit (SC), and partial discharge (PD) test results. Static characterization results are presented first. The module performance change after repetitive pulse SC tests is provided by comparing the original static characterization test results to the one performed after the SC stress tests. More electric aircrafts (MEA) require an increased electric system voltage level (e.g., 230 VAC constant or variable frequency, ± 270 VDC or 540 VDC) and make PD a very relevant and urgent issue. Thus, PD evaluation tests for the module package are included for different air pressures from Sea Level (i.e., 760 Torr) to 50,000 feet (i.e., 87 Torr) altitude. The PD inception voltage (PDIV) and extinction voltage (PDEV) obtained via experimentation are presented in this paper.

Short Circuit Ruggedness and Partial Discharge Evaluation of a 3.3 kV SiC MOSFET Power Module

SiC MOSFETs are a beneficial solution in motor inverter applications because of their remarkable intrinsic diode reverse recovery behavior. SiC MOSFETs have successfully emerged as the best choice as devices for realizing high performance and high power motor drive in, for example, electric vehicles, but have rarely been used in low power motor drive for applications. In this work, an all-in-one system integrated SiC intelligent power module, which integrates the MCU, memory, SRAM, motor control library, ADC, DAC, gate drivers, and SiC MOSFETs was proposed to explore the benefits and potential of SiC MOSFETs in highly integrated BLDC/PMSM motor drive. As a result, SiC solution generally saves over 80% of space, improves the thermal performance by 27.7°C, and enhances 3% of efficiency compared to the silicon counterparts.

A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-One System Integrated Full SiC Intelligent Power Module (sIPM®)

The role of an academic in the area of SiC power devices can be categorized as: (1) Fundamental Theoretical Predictions; (2) Fundamental Scientific Knowledge; (3) Fundamental Device Structures; (4) Device Structural Innovations; (5) Device Physics and Analysis; and (6) Technology Feasibility Studies. This paper provides examples of these activities during my past 40 years of effort in this field as a retrospective. New prospective device ideas that will have a strong impact on power electronics in the future are then discussed.

An Academic’s Perspective on SiC Power Devices: Retrospection and Prognostication

The adoption of SiC Schottky diodes and then SiC MOSFETs in solar inverter applications was the first wave to evaluate the capabilities of these new devices in challenging applications and environments.  With the observed and projected growth of demand for high-efficiency, high-voltage power semiconductor devices in automotive traction and EV chargers, challenges arise to supply SiC devices into these demanding applications.  Current and emerging SiC power device manufacturers are developing strategies to be able to support the accelerating need for SiC power device supply.  onsemi is building on its strength in end-to-end solutions of silicon power semiconductor devices, starting with silicon crystal growth and epitaxy, through die fabrication and final package and module assembly.  onsemi has extended its existing silicon-based power semi portfolio into SiC-based power modules.  To achieve this, we continue to invest heavily in SiC wafer and epitaxy, as well as expanding wafer fab capacity to meet the growing demand.  Additionally, onsemi continues to develop advanced SiC power modules to meet the specific needs of automotive and industrial customers. At onsemi, we strongly believe that this vertically-integrated strategy will help meet the growing customer needs for high-efficiency SiC power modules.

Toward Vertical Integration to Scale the Supply of High Performance SiC Power Modules for Demanding Applications

There is little debate nowadays about the merit of GaN or SiC material for Power Electronics applications compared to the Silicon-based technologies. Power supplies and power inverter continue to drive most of the Wide Bandgap material adoption with Gallium Nitride used nowadays in nearly every power supply and Silicon Carbide as the material of choice for high efficiency power inverters for long range Electric Vehicle (EV). To enable such widespread adoption into new applications, MOCVD equipment needs to ensure not only to meet the tightest material performance requirements but also to provide solutions enabling cost reduction year after year. In addition, the current semiconductor ramps, and material constraints are accelerate the transition to larger substrate size and the focus on integrability into Silicon factory as well as tool productivity per unit for clean room floor area. We will present how AIXTRON is addressing those markets with new series of high throughput solutions for Wide Bandgap materials and how this contribute to bolst the output of existing factories.

New high throughout solutions for Wide Bandgap power semiconductors

As the world looks beyond silicon for the next generation of power electronics, NexGen Vertical GaN™, the world’s first GaN-on-GaN power semiconductor, unlocks the full potential of Gallium Nitride (GaN). It is the only wide band gap power semiconductor that provides high-voltage capabilities up to 4kV, switching frequencies up to 10MHz, and avalanche and short-circuit robustness. This makes it an ideal power semiconductor for applications from LED Lighting and Computing to Data Centers and Electric Vehicles. NexGen is reinventing power electronics by leveraging this breakthrough technology and building a scalable, software-configurable power platform that enables the smallest, lightest, and most efficient power systems.

Bidirectional High Voltage Conversion Ratio High-Frequency DC/DC Converter with Low Number of Components

Next from IEEE WiPDA 2022

Busbar Design and Optimization for High Power Three-Phase Inverter with WBG Device

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