Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/rbtz-jj76

technical paper

MMM 2022

November 07, 2022

Minneapolis, United States

Perpendicular Magnetic Tunnel Junctions with Crystalline Anisotropy and Energy efficient Switching of Synthetic Antiferromagnet pMTJs by voltage

In this talk, we first report the roadmap and development of advanced perpendicular magnetic tunnel junctions based on low-damping magnetic materials with crystalline anisotropy that can be scaled down to sub-3-nm diameter with 10 years’ retention time 1. Then, we will present the perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields. Traditional voltage-controlled magnetic anisotropy only linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we propose and demonstrate a bipolar electric field effect switching of 100-nm p-MTJs through voltage-controlled exchange coupling (VCEC) 2. The switching current density, ~1.1×105 A/cm2, is one order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that electric field induces a ferromagnetic-antiferromagnetic exchange coupling transition and generates a field-like interlayer exchange coupling torque, which cause the bidirectional magnetization switching. We will further report our recent results to switch the p-MTJs using the interplay of SOT and VCEC, which lowers the VCEC switching current density to ~5×103 A/cm23. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications. This technology can be used directly for the future spin-orbit-torque (SOT) MRAM 3 and spin logic devices 4.
1 D. Zhang, et al, Phys. Rev. Applied, (2018) vol. 9, 044028
2 D. Zhang, et al, Nano Letters (2022), doi.org/10.1021/acs.nanolett.1c03395
3 B. Zink, et al, Advanced Electronic Materials, (2022), DOI: 10.1002/aelm.202200382
4 M. Mankalale, et al, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 3 (2017) 27-36; 10.1109/JXCDC.2017.2690629


Transcript English (automatic)

Next from MMM 2022

Magnetism and Electron Spin Resonance (ESR) in Mo doped LaMnO3
technical paper

Magnetism and Electron Spin Resonance (ESR) in Mo doped LaMnO3

MMM 2022

Ramanathan MahendiranYong Heng Lee
Yong Heng Lee and 1 other author

07 November 2022

Stay up to date with the latest Underline news!

Select topic of interest (you can select more than one)


  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved