Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/g7b5-vd34

technical paper

MMM 2022

November 07, 2022

Minneapolis, United States

Spin orbit torque switching of magnetic tunnel junctions for memory applications

The continuous growth in the demand to store, process, and access data is one of the main drivers of spintronic research. Emerging big data and AI computing technologies require writing data in less time and storing them at a smaller scale, and consuming less energy 1. Magnetic memories (MRAM) using spin-transfer torques have proven their place among leading non-volatile memory technologies and are currently in production for eFlash replacement applications 2. In parallel, spin-orbit torques (SOT) have emerged and proven to be an efficient way of writing reliably magnetization at nanosecond time scale, broadening the scope of MRAM to applications that run close to the clock speed of the central processing unit, leading to novel spintronic memory and computing approaches 3, 4. I will review across this presentation the fundamental characteristics of SOT and their use to switch perpendicularly magnetized magnetic tunnel junction (MTJ) devices. I will cover different challenges to take up SOT-MRAM from material and stack optimization to technology large-scale integration and circuit design 5. After describing typical full-scale integration process of SOT-MRAM devices on 300mm wafers using CMOS compatible processes, I will discuss manufacturable field free methods and figures of merit for SOT-based memories. Finally, I will introduce bit-cell design considerations on scaling and performance in the perspective of circuit macro-design architectures 6, and discuss the interest to combine SOT, STT and voltage-gate (VCMA) effects to improve density and leverage performances 7. I will conclude with opportunities to diverse SOT-MRAM application spectra, notably in the field of in-memory computing 8.


1 G. Molas and E. Nowak, “Advances in emerging memory technologies: From data storage to artificial intelligence,” Appl. Sci., vol. 11, no. 23, (2021), 2 B. Dieny et al., “Opportunities and challenges for spintronics in the microelectronics industry,” Nat. Electron., vol. 3, no. 8, pp. 446–459 (2020), 3 Q. Shao et al., “Roadmap of Spin-Orbit Torques,” IEEE Trans. Magn., vol. 57, no. 7 (2021), 4 A. Manchon et al., “Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems,” Rev. Mod. Phys., vol. 91, no. 3 (2019), 5 K. Garello, F. Yasin, and G. S. Kar, “Spin-orbit torque MRAM for ultrafast embedded memories: From fundamentals to large scale technology integration,” IEEE IMW 2019, pp. 2019–2022 (2019), 6 M. Gupta et al., “High-density SOT-MRAM technology and design specifications for the embedded domain at 5nm node,” Tech. Dig. - IEDM, vol. 2020-Decem, pp. 24.5.1-24.5.4 (2020), 7 Y. C. Wu et al., “Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications,” Phys. Rev. Appl., vol. 15, no. 6, pp. 1–10 (2021), 8 J. Doevenspeck et al., “SOT-MRAM based Analog in-Memory Computing for DNN inference,” Dig. Tech. Pap. - Symp. VLSI Technol., vol. 2020-June, no. 1, pp. 2020–2021 (2020)


Transcript English (automatic)

Next from MMM 2022

Large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
technical paper

Large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

MMM 2022

+9Alexander GrutterYang Lv
Yang Lv and 11 other authors

07 November 2022

Stay up to date with the latest Underline news!

Select topic of interest (you can select more than one)


  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved