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VIDEO DOI: https://doi.org/10.48448/6gsw-sp14

technical paper

MMM 2022

November 07, 2022

Minneapolis, United States

Clarifying the Origin of Charge to

Spin current is one of the key technologies for spintronics devices. Especially, generation of spin currents via electrical charge current has attracted a great deal of attentions from both fundamental physics and application point of views because it can manipulate magnetization vector of the ferromagnet 1. This charge-to-spin conversion phenomena originate from spin-orbit coupling and has been widely studied in non-magnetic materials. Recently, the interest in spin conversion materials has extended to ferromagnetic materials (FMs). FMs can generate magnetization-dependent charge-to-spin conversion (MD-CSC), which is caused by the reduced mirror symmetry due to the presence of magnetization, and this MD-CSC can be used as a writing source for high-density MRAM (Fig. 1) 2. However, the origin of this MD-CSC has not been calrified yet, for instance, whether the interfacial or bulk contribution is domoinant. In addition to this, a guideline for high spin conversion efficiency is highly required for realizing energy-efficient writing in MRAM devices. In this presentation, we systematically studied the charge-to-spin conversion in ferromagnetic material to clarify its origin 3. Through precise measurement of spin conversion efficiency via spin-torque ferromagnetic resonance 4, we experimentally revealed that two different mechanisms, which originate from the bulk and at interface, contribute to the charge-to-spin conversion in ferromagnet. Next, we demonstrated a guideline to enhance the spin conversion efficiency which is to control the interface structure between Ni-Co alloy and non-magnetic spacer Cu spacer layer (Fig.2) 3. Moreover, we show that even the sign of the MD-CSC can be tuned by changing the non-mangetic spacer material 5. These findings would be a milestone toward realizing a high-density and energy-efficient spin-orbit torque MRAMs. This work was partly supported by Grant-in-Aid for Scientific Research (Nos. JP16J03105, JP25220604, JP15H05702, and JP19J01643) and CREST program (No. JPMJCR18T3) of JST. Part of this work was conducted at the AIST Nano-Processing Facility, supported by Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technologies (MEXT), Japan.
1 A. Manchon et.al, Rev. Mod. Phys. 91, 035004 (2019). 2 S. C. Baek et.al, Nat. Mater. 17, 509-513 (2018).
3 Y. Hibino et al., Nat. Commun. 8, 15848 (2021).
4 Y. Hibino et.al, Phys. Rev. B 101, 174441 (2020). 5 Y. Hibino et al., APL Mater. 8, 041110 (2020).


Transcript English (automatic)

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