United States

The characterization and analysis of magnetization dynamics and magnetic damping of antiferromagnetic magnons is important in the field of antiferromagnetic
spintronics. This is primarily because antiferromagnets have magnetic resonances in the THz range as compared to ferromagnetic resonance which tends to occur in the GHz range. In this
work, we employ frequency-domain THz spectroscopy to explore the antiferromagnetic resonance frequency associated with monocrystalline NiO [1]. Specifically, a continuous-wave THz
spectroscopy system is used to measure the antiferromagnetic resonance of three NiO cuts (111), (110), and (100). To find the absorption peak, a reference measurement is taken in addition
to the NiO measurement. Raw data from the reference and NiO can be visually compared to see two effects: the THz system instrument response and Fabry-Perot interference pattern.
During analysis, the instrument response and Fabry-Perot pattern are subtracted so that a clear absorption peak at the resonant frequency of NiO can be observed. An antiferromagnetic
resonance, near 1 THz, is seen in each cut of NiO. Our results demonstrate the utility of working in the frequency domain to characterize antiferromagnetic materials that will be used
eventually for ultrafast antiferromagnetic spintronic device technologies.&lt;br&gt;

**References:**&lt;br&gt;

[1] Moriyama, Takahiro, et al., Physical Review Materials 3.5, 051402 (2019)

MMM 2022

Exploring antiferromagnetic resonances of NiO with frequency domain THz spectroscopy

The characterization and analysis of magnetization dynamics and magnetic damping of antiferromagnetic magnons is important in the field of antiferromagnetic
spintronics. This is primarily because antiferromagnets have magnetic resonances in the THz range as compared to ferromagnetic resonance which tends to occur in the GHz range. In this
work, we employ frequency-domain THz spectroscopy to explore the antiferromagnetic resonance frequency associated with monocrystalline NiO [1]. Specifically, a continuous-wave THz
spectroscopy system is used to measure the antiferromagnetic resonance of three NiO cuts (111), (110), and (100). To find the absorption peak, a reference measurement is taken in addition
to the NiO measurement. Raw data from the reference and NiO can be visually compared to see two effects: the THz system instrument response and Fabry-Perot interference pattern.
During analysis, the instrument response and Fabry-Perot pattern are subtracted so that a clear absorption peak at the resonant frequency of NiO can be observed. An antiferromagnetic
resonance, near 1 THz, is seen in each cut of NiO. Our results demonstrate the utility of working in the frequency domain to characterize antiferromagnetic materials that will be used
eventually for ultrafast antiferromagnetic spintronic device technologies. 

**References:** 

[1] Moriyama, Takahiro, et al., Physical Review Materials 3.5, 051402 (2019)

technical paper

#### Welcome to the 67th Annual Conference on Magnetism and Magnetic Materials, MMM 2022!

The Conference was held from October 31 to November 4 and offers both in-person and on-demand content.

MMM 2022 is sponsored jointly by AIP Publishing and the IEEE Magnetics Society. Members of the international scientific and engineering communities interested in recent developments in fundamental and applied magnetism are invited to attend and contribute to the technical sessions. The technical program will include invited and contributed papers in oral and poster sessions, invited symposia, a tutorial, and several special sessions. This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

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The introduction of magnetism in topological insulators, semiconducting materials that are non-magnetic by nature, has long been sought after in order to realize exotic quantum effects. Most prominent is the quantum anomalous Hall effect (QAHE), where electronic surface states allow the dissipationless propagation of charges through a material [1]. Additionally, these states are 100% spin-polarized and immune to external perturbations, rendering them ideal candidates for spintronic applications as well as quantum computing.

The QAHE is not restricted to a particular temperature range but has so far only been observed at around 1 K in magnetically doped topological insulators [2]. Thus, the task at hand is to find new concepts to magnetize the topological insulator. Here, we investigate a new approach based on proximity induced magnetization in heterostructures, where the topological insulator Bi2Te3 and the topologically trivial, magnetic add-layer MnTe share an interface but are otherwise spatially separated [3]. We employ polarized neutron reflectivity, x-ray spectroscopy and magnetotransport measurements to evaluate the magnetic properties of each individual layer and the magnetic landscape at the MnTe/Bi2Te3 interface. We find the MnTe layer in a ferromagnetic instead of the anticipated antiferromagnetic state and that Mn constituents penetrate into the Bi2Te3 layer. Those effects go often unnoticed and can be misinterpreted as proximity induced magnetization, for which no indication can be found. Hence, we provide a robust, multitechnique approach to gain a complete picture of the magnetic structure and the toolbox to optimize the interface, thereby increasing the temperature range the QAHE can be observed in. Our work thus contributes to the transformation of magnetic topological insulators from fundamental research to practical applications. 
**References** [1] F. D. M. Haldane, Phys. Rev. Lett. 61, 2015 (1988) 
[2] C. Z. Chang et al., Science 340, 167 (2013) 
[3] G. Awana et al., Phys. Rev. Mater. 6, 053402 (2022) 

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A toolbox for evaluation and optimization of proximity induced magnetism in MnTe/Bi2Te3 heterostructures

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of the current-driven switching of antiferromagnets. Harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect in heavy-metal/ferromagnet systems. However, the harmonic measurement of spin-orbit torque technique has never been verified in antiferromagnetic heterostructures. Here, we report for the first time harmonic measurements in Pt/a-Fe2O3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/a-Fe2O3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices. 

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Third Harmonic Characterization of Antiferromagnetic Heterostructures

Spintronics utilizes the spin orbit coupling (SOC) of a heavy metal layer to generate spin currents by the spin Hall effect (SHE), which can then induce spin orbit torques (SOT) to alter the magnetization of an adjacent ferromagnet. SOT can be both fast and energy-efficient and enable technological applications in spintronic devices such as spin Hall nano-oscillators (SHNOs) [1-3], SOT based magnetic random access memory(SOT-MRAM), and spin logic devices [4,5]. However, spin currents generated by SOC also exist in magnetic materials. Recent studies evidenced very large emission of spin currents and strong SOT for magnetization switching in ferrimagnets near compensation [6,7].
In the present study nearly compensated GdFeCo, and Py, are used as spin Hall layer and ferromagnetic layer, respectively. We studied the tunable behaviour of both damping-like(DL) and field-like(FL) SOT efficiencies (θDL and θFL) with respect to a Cu insertion layer in Gd26.7(FeCo)73.3 (10 nm)/Cu(1-5 nm)/Py(3 nm) stack. We performed spin transfer torque ferromagnetic resonance (ST-FMR) measurements on microbars (6 ×12 μm2) to determine the magneto dynamical properties such as current induced DL and FL SOT efficiencies. Figure 1 (a) and (b) show the ST-FMR spectra in the frequency range of 10-15 GHz, and the corresponding linewidth vs. frequency plot of Gd26.7(FeCo)73.3 (10 nm)/Cu(4 nm)/Py (3 nm); (c) and (d) show the Cu thickness dependent SOT efficiencies at f=8 GHz. The DL-SOT efficiency is found to be maximum, θDL~ 20%, at Cu (2 nm) followed by a decreasing trend at higher Cu thicknesses. However, FL-SOT efficiency shows a minimum, θFL~ 10%(-7%), up to Cu (2 nm) followed by ~-53%(48%) at Cu (5 nm) for +ve(-ve) direction of applied magnetic field. The larger value of θFL at higher Cu thickness will be useful for ultrafast current induced magnetization switching as seen in other ferrimagnetic systems. 
**References**
1. H. Mazraati et al., Low operational current spin Hall nanooscillators based on NiFe/W bilayers, Appl. Phys. Lett. 109, 242402 (2016).
2. H. Fulara et al., Spin-orbit torque–driven propagating spin waves, Sci. Adv. 5, eaax8467 (2019).
3. M. Zahedinejad et al., Two-dimensional mutually synchronized spin Hall nano-oscillator arrays for neuromorphic computing. Nat. Nanotechnol. 15, 47–52 (2020).
4. K. Garello et al., Ultrafast magnetization switching by spin-orbit torques, Appl. Phys. Lett. 105, 212402 (2014).
5. M. Cubukcu et al., Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction, Appl. Phys. Lett. 104, 042406 (2014).
6. D. Céspedes-Berrocal et al., Current-induced spin torques on single GdFeCo magnetic layers, Adv. Mater., 33, 2007047(2021).
7. R. Mishra et al., Anomalous Current-Induced Spin Torques in Ferrimagnets near Compensation, Phys. Rev. Lett. 118, 167201 (2017). 
![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/75246678ebfe0d34b176cd36ac3d9891.png)

Tunable spin orbit torques in Ferrimagnet/Ferromagnetic heterostructures

Magnetic-tunnel-junction-based hard disk drive read-heads have been highly successful. They face pressing current challenges, however, due to high resistance-area product, which leads to impedance-mismatch-driven signal-to-noise issues as scaling continues [1]. Alternative all-metal spintronic devices are thus of high interest, including spin accumulation sensors based on non-local spin valves (NLSVs) [2]. Due to low output signals in such devices, and also for fundamental research, it is highly desired to improve the spin signal in metallic NLSVs. As this spin signal is essentially proportional to the square of the current spin polarization, α [3], we have explored integration of high-spin-polarization Co1-xFex alloy ferromagnetic injectors/detectors into NLSVs. Co1-xFex alloys are known to display a peak in α at x ≈ 0.25 and have been employed in other spintronic devices [4,5]. Otherwise identical Al-based NLSVs were fabricated with either conventional Co or Co75Fe25 ferromagnetic injectors/detectors via single-shot ultrahigh vacuum evaporation into electron-beam-lithographic masks (Fig 1, inset). X-ray and spectroscopic characterization indicates site-disordered BCC Co75Fe25 films. Comparing Co75Fe25 and Co, the non-local spin signal (ΔRNL) increases by factors of 3 and 4, respectively, at 275 and 5 K (Fig. 1), confirming significant enhancement. Full analysis of the temperature and injector/detector separation dependence reveal α values of ~60%, with a strikingly weak temperature dependence (Fig. 2). We thus establish a facile route to ~2-fold enhancement of spin polarization over conventional ferromagnets used in NLSVs (Fig. 2), thereby inducing ~4-fold enhancement in spin signal, of interest for both applied and fundamental purposes. This work is supported by the NSF and the Advanced Storage Research Consortium. 
**References** [1] T. Nakatani, Z. Gao, and K. Hono, MRS Bull., Vol. 43, p. 106 (2018) [2] H. Takagishi, K. Yamada, and H. Iwasaki, IEEE Trans. Mag., Vol. 46, p. 2086 (2010) [3] S. Takahashi, and S. Maekawa, PRB, Vol. 67(5), p. 052409 (2003) [4] D. J. Monsma, and S. S. P. Parkin. Appl. Phys. Lett., Vol. 77(5), p. 720 (2000) [5] S. V. Karthik, T. M. Nakatani, A. Rajanikanth, J. Appl. Phys., Vol. 105(7), p. 07C916 (2009) 
 
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Enhanced Spin Signal in Metallic Non Local Spin Valves with Highly

In the post-Moore era, spintronic is one of the key technologies to break the bottleneck of high energy consumption of electronic devices1. However, as the process node
moves on, conventional ferromagnet-based spintronic devices meet the superparamagnetic size limit. Under such circumstance, perpendicular synthetic antiferromagnets with high
scalability and readability, strong immunity to external field and ultrafast dynamics, become a competitive choice for the next generation spintronics memory and logic devices2. Here, we propose a strategy to energy efficiently operate their magnetic order by spin orbit torque (SOT) under zero external field through the introduction of interlayer Dzyaloshinskii–Moriya interaction (DMI)3,4. By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Compared with previous field-free switching solutions, the performance of SOT device is well preserved. Our work pave the way for a wide range of potential high performance SOT devices5. 
**References** 
1 Z. Guo, J. Yin, Y. Bai et al., Proceedings of the IEEE., vol.109, p.8, (2021)
2 R. A. Duine, K. J. Lee, S. S. P. Parkin, M. D. Stiles, Nature Physics., Vol.14, p.217–219 (2018).
3 D. Han, K Lee, J Hanke et.al., Nature Materials., Vol.18, p.703–708 (2019)
4 A. Fernández-Pacheco, et al., Nature Materials., Vol.18, p.679–684 (2019).
5 Z. Wang, P. LI, Y. Yao et al., https://arxiv.org/abs/2205.04740, (2022) 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/377f489a894bf078aadba05a26cdde29.png) 
Schematic illustration of SAF field-free SOT switching through interlayer DMI. (A-D) Spin textures' evolution with time during the application of a SOT current pulse along -x. (E) A
sketch of the experimental setup where the switching mechanism under a domain nucleation and propagation regime is indicated. The probe laser is used to detect the MOKE signal in our
experiment. 
![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/7e7d043248771b0807a14e84b77ecab4.png) 
Field-free SOT switching detected by optical Kerr measurement. (A) Normalized p-MOKE signal of the studied film. (B) Kerr image after the application of a current pulse. The switching
area is counted from the composite image below. (C) Summarization of current induced switching behavior as a function of azimuthal direction.

Field free spin

Magnetic skyrmions are topological structures in magnetic materials such as ferromagnets (FMs) and antiferromagnets (AFMs). They are expected to become promising candidates of the logic gates in the next generation. Among them, the skyrmions in the FMs have been studied extensively. However, there exists main obstacle such as the skyrmion Hall effect when making the logic gates using skyrmions in the FMs. Recently, the skyrmions in the AFMs have been proposed in order to overcome the main obstacle. Moreover, the skyrmions in the AFMs move much faster than the skyrmions in the FMs. Therefore, it is very beneficial to make the logic gates based on the skyrmions in the AFMs. However, the logic gates based on the skyrmions in the AFMs have not been well studied. In this study, we propose the logic gates based on the skyrmions in the AFMs. We assume KMnF3 thin films on Pt as the AFMs [1-3]. Figures 1 and 2 show the micromagnetic simulation results of the logic AND gate for the input combinations (1, 0) and (1, 1), respectively. The black circles represent the input and the output positions of the logic gate. The black arrows represent the elapse of time. The existence or the non-existence of a skyrmion represents one bit of "1" or "0", respectively. As shown in Figs. 1 and 2, we can obtain the outputs 0 and 1 for input combinations (1, 0) and (1, 1), respectively. Similarly, we can obtain the outputs 0 for the input combinations (0, 0), (0,1). It is found that the antiferromagnetic systems in Figs. 1 and 2 act as the logic AND gates. Therefore, we have been able to realize the logic AND gate using the skyrmions in the AFMs. In our presentation, we are going to discuss the micromagnetic simulation results of not only "the logic AND gate" but also both "the logic OR gate" and "the logic NOT gate". Moreover, we are going to discuss how to transfer the output of one logic gate to the input of another logic gate. We consider that this study would be useful for making the logic gates using the skyrmions in the AFMs. 

**References** 
J. Barker and O. A. Tretiakov, Phys. Rev. Appl 116, 147203 (2016). 
N. Bindal, C. A. C. Ian, W. S. Lew, and B. K. Kaushik, Nanotechnol. 32, 215204 (2021). 
X. Zhang, Y. Zhou, and M. Ezawa, Sci. Rep. 6, 24795 (2016). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/f7232ff737733625e059bd6119e5c260.png) 

Fig. 1 The micromagnetic simulation results of the logic AND gate for the input combination (1, 0). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/12038a4fbdeb62e4cefae3a0a735f21d.png) 

Fig. 2 The micromagnetic simulation results of the logic AND gate for the input combination (1, 1).

Theoretical Consideration of Logic Gates Based on Skyrmions in Antiferromagnets

The development of dual phase soft magnetic laminate for advanced electric machines at General Electric is summarized, including alloy development, properties, manufacturing trials, prototype experience, potential applications, and future material development. Dual phase soft magnetic laminates provide the flexibility to tune magnetic/non-magnetic state at the desired locations, using solution nitriding treatment with protective mask/coating. This enabling material technology benefits electric machine performance by reducing flux leakage in the laminates. It also decouples electromagnetic and mechanical design, which opens up the design space for advanced electric machines. Magnetic and mechanical properties of dual phase laminates were compared to commercial FeSi and FeCo soft magnetic laminates. Driven by the market needs for high power density and high-speed electric machines, a synchronous reluctance (SynRel) machine without permanent magnets and an interior permanent magnet machine using dual phase soft magnetic laminates were assessed in machine electromagnetic performance as well as rotor stress analysis by finite element simulation. Successful prototype build and testing further retired manufacturing risks and advanced the technology maturity level. Future material development with higher mechanical strength, higher saturation magnetization, higher permeability, and lower loss are highly desired for ground and air transportation electrification. 
**References:** 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/46e620f4bd7ba04d15e62e86fe52c5db.png) 
Figure 1. Dual phase laminate processing route for motor prototype.

Development of Dual Phase Soft Magnetic Laminate for Advanced Electric Machines

Ferrimagnets composed of two or multi antiferromagnetically coupled magnetic sublattices have attracted much attention recently due to the easily controlled and detected net magnetization and a fast magnetic dynamic behavior [1]. Especially, ferrimagnetic thin films with perpendicular magnetic anisotropy (PMA) show great potential for high-density spintronics devices [2]. Currently, most of work focus on the rare earth-transition metal ferrimagnetic alloys, such as GdFeCo and TbCo. However, the magnetization of these materials is sensitive to the temperature and composition [3]. The antiperovskite Mn4N compound is a rare-earth-free ferrimagnet showing a PMA, high thermal stability, high spin polarization and low saturation magnetization which make it promising for practical spintronics devices [4]. 
For the crystalline structure of Mn4N compound, Mn atoms occupy the corners (MnA) and face-centers (MnB) of the cubic unit cell, respectively, while N atom is located at the body center, as shown in Fig. 1(a). The magnetic moment of MnA and MnB are antiferromagnetically coupled with a high Curie temperature, 740 K. PMA in Mn4N thin films had been observed by epitaxially depositing it on the MgO substrate. However, the large lattice mismatch between Mn4N and MgO, −6%, induces a misfit dislocation of Mn4N resulting in a poor PMA. In this work, by inserting a thin Pd buffer layer with a very close lattice constant of Mn4N, we prepared the stacks MgO(substrate)/Pd(t = 0, 2 and 8 nm)/Mn4N(80 nm)/Ta(3 nm). We systematically studied the effect of Pd buffer layer on the crystalline structure and magnetization of Mn4N thin films. With inserting a Pd buffer layer, a good quality of crystalline structure can be formed which significantly improves the PMA, as shown in Fig. 1(b). 
**References:** [1] S. K. Kim et al., Nat. Mater. 21, 24–34 (2022) 
[2] B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017) 
[3] H. Bai et al., Adv. Electron. Mater. 8, 2100772 (2022) 
[4] Z. Zhang and W. Mi, J. Phys. D: Appl. Phys. 55 013001 (2022) 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/8c0e2564383234f67714a1850714808a.png) 
Fig. 1: (a) Crystalline structure of Mn4N. (b) Pd thickness dependence of magnetization of Mn4N under an external out-of-plane magnetic field.

Perpendicular Magnetic Anisotropy of Ferrimagnetic Mn4N Thin Film Improved by the Pd Buffer Layer

The family of 2D compounds has grown almost exponentially since the discovery of graphene and so too the rapid exploration of their vast range of electronic properties. Some family members include superconductors, Mott insulators with charge-density waves, semimetals with topological properties, and transition metal dichalcogenides with spin-valley coupling1. Among several compounds, the realization of long-range ferromagnetic order in van der Waals (vdW) layered materials has been elusive till very recently. Long searched but only now discovered 2D magnets are one of the select group of materials that retain or impart strongly spin correlated properties at the limit of atomic layer thickness. In this presentation I will discuss how different layered compounds (e.g., CrX3 (X=F, Cl, Br, I), VI3, MnPS3, Fe3GeTe2, FePS3, CrGeTe3) can provide new playgrounds for exploration of spin correlations involving quantum-effects, topological spin-excitations and higher-order exchange interactions. I will show that this new generation of vdW magnets can help to revolutionize several technological domain wall applications from sensing to data storage, which can lead to new magnetic, magnetoelectric and magneto-optic applications in industry2,3,4,5. Moreover, I will discuss some challenges at the forefront of 2D vdW magnets and new opportunities to understand fundamental problems. 

**References:** 
1. Q. Wang et al. ACS Nano 16, 6960 (2022). 
2. D. Wahab et al. Adv. Mater. 33, 2004138 (2021). 
3. D. Wahab et al. Appl. Phys. Rev. 8, 041411 (2021). 
4. M. Alliati et al. npj Comput. Mater. 8, 3 (2022). 
5. J. Macy et al., Appl. Phys. Rev. 8, 041401 (2021). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/8ba88e9d20f149544cd5337462dc9698.png)

Towards domain wall devices with 2D van der Waals magnets

Fe5-xGeTe2 is a layered and exfoliable van der Waals (vdW) ferromagnet that displays Curie temperatures Tc ranging between 270 and 330 K, which are within a useful range for spintronic applications. Nevertheless, little is known about the interplay between topological spin textures (e.g., merons, skyrmions) and their transport properties (e.g., the topological Hall effect (THE)) which might influence the response of devices and be harvested for applications. Here, we show through a Lorentz transmission electron microscopy study in Fe5-xGeTe2 the coexistence of merons and anti-meron pairs with Néel skyrmions and antiskyrmions over a broad range of temperatures upon approaching a magneto-structural transition. We measured the THE associated to both types of spin textures finding that it is affected by their coexistence being measureable at room temperature and beyond [1]. 
Remarkably, we also observe a sizeable unconventional THE for currents and magnetic fields aligned along a planar direction, a configuration that is insensitive to the Lorentz force [2]. 
We attribute this to carrier interaction with magnetic field-induced chiral spin textures. Given that the Curie temperature of Fe5-xGeTe2 can be increased via either Ni [3] or Co [4] doping, we conclude that 2D centro-symmetric vdW magnets are ripe for the exploration of their possible applications in skyrmionics/meronics [5] and also of new hybrid spin quasiparticles as well as their possible manipulation via external stimuli such as current and light. Our results suggest that unconventional topological spin textures (that is, those distinct from merons or skyrmions) might exist in atomically thin vdW layers whose properties have yet to be unveiled.

**References:**

[1] Brian W. Casas, Yue Li, Alex Moon et al., Room temperature unconventional topological Hall response in a van der Waals ferromagnet driven by meron-antimeron pairs (unpublished) 
[2] Juan Macy, Danilo Ratkovski, Purnima P. Balakrishnan et al., Magnetic field-induced non-trivial electronic topology in Fe3−xGeTe2, Appl. Phys. Rev. 8, 041401 (2021). 
[3] Xiang Chen, Yu-Tsun Shao, Rui Chen et al., Pervasive beyond Room-Temperature Ferromagnetism in a Doped van der Waals Magnet, Phys. Rev. Lett. 128, 217203 (2022). 
[4] Hongrui Zhang, David Raftrey, Ying-Ting Chan et al., Room-temperature skyrmion lattice in a layered magnet (Fe0.5Co0.5)5GeTe2, Sci. Adv.8, eabm7103 (2022). 
[5] Hamed Vakili, Jun-Wen Xu, Wei Zhou et al., Skyrmionics—Computing and memory technologies based on topological excitations in magnets, J. Appl. Phys. 130, 070908 (2021). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/aa4690b095d7b4df4fb15551ea832010.jpg)

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