United States

Switch timings of MRAM technologies, such as Spin Transfer Torque (STT) and Spin Orbit Torque (SOT), are critical in the context of SRAM replacement for last level
cache applications [1]. The operating conditions of Magnetic tunnel junction (MTJ) result from the compromise between writing current level, retention and stability during read operation.
To optimize the operating conditions for a given application and tune the physical parameters of the MTJs, we propose a new system able to extract the incubation and switching times
under writing pulses application.
The proposed system operates by acquiring and analyzing the reflected signal of the writing pulse applied on the MTJ, which could be a 2 or 3 terminal (STT[2] or SOT[3]) MRAM. The
test system includes a pulse generator, a set of RF circuits and a high-resolution scope. The test sequence operates in a fully automated manner, in a 2 steps process. Firstly, an average
signal in both P (red line) and AP (blue line) states are acquired as reference measurements. Secondly, single shots or averaged measurements of the switching events are acquired and the
reference data is subtracted, as shown in Fig.1 on STT-MRAM devices. The probability of switching and average switching time versus pulse amplitude and width can be extracted. The
validity of fast macrospin switching, without any domain wall formation can be verified. With single shot measurements, switching time of single events can be acquired, as well as the
incubation time before the switching occurs [2]. The full test flow is executed in a few seconds, enabling the possibility to test population of devices using automated probing stations.
Using the system and our 3D magnetic generator, the test protocol can also be executed under application of an external magnetic field to study the field immunity of the device and the
corresponding influence on the switching dynamics.&lt;br&gt;

**References:**&lt;br&gt;

[1] P. Barla, V. K. Joshi, and S. Bhat, J. Comput. Electron. 20, 805–837 (2021).
[2] J. Sampaio, S. Lequeux, P. Metaxas, et al., APL 103, 242415 (2013).
[3] E. Grimaldi, V. Krizakova, G. Sala, et al., Nature Nanotechnology 15, pages111–117 (2020). &lt;br&gt;

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MMM 2022

Automated Acquisition of Switching Dynamics in Reflexion Mode of MRAM Magnetic Tunnel Junctions

Switch timings of MRAM technologies, such as Spin Transfer Torque (STT) and Spin Orbit Torque (SOT), are critical in the context of SRAM replacement for last level
cache applications [1]. The operating conditions of Magnetic tunnel junction (MTJ) result from the compromise between writing current level, retention and stability during read operation.
To optimize the operating conditions for a given application and tune the physical parameters of the MTJs, we propose a new system able to extract the incubation and switching times
under writing pulses application.
The proposed system operates by acquiring and analyzing the reflected signal of the writing pulse applied on the MTJ, which could be a 2 or 3 terminal (STT[2] or SOT[3]) MRAM. The
test system includes a pulse generator, a set of RF circuits and a high-resolution scope. The test sequence operates in a fully automated manner, in a 2 steps process. Firstly, an average
signal in both P (red line) and AP (blue line) states are acquired as reference measurements. Secondly, single shots or averaged measurements of the switching events are acquired and the
reference data is subtracted, as shown in Fig.1 on STT-MRAM devices. The probability of switching and average switching time versus pulse amplitude and width can be extracted. The
validity of fast macrospin switching, without any domain wall formation can be verified. With single shot measurements, switching time of single events can be acquired, as well as the
incubation time before the switching occurs [2]. The full test flow is executed in a few seconds, enabling the possibility to test population of devices using automated probing stations.
Using the system and our 3D magnetic generator, the test protocol can also be executed under application of an external magnetic field to study the field immunity of the device and the
corresponding influence on the switching dynamics. 

**References:** 

[1] P. Barla, V. K. Joshi, and S. Bhat, J. Comput. Electron. 20, 805–837 (2021).
[2] J. Sampaio, S. Lequeux, P. Metaxas, et al., APL 103, 242415 (2013).
[3] E. Grimaldi, V. Krizakova, G. Sala, et al., Nature Nanotechnology 15, pages111–117 (2020). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/a738a3b77cf582f4894a0852f96e1e7a.png)

technical paper

#### Welcome to the 67th Annual Conference on Magnetism and Magnetic Materials, MMM 2022!

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MMM 2022 is sponsored jointly by AIP Publishing and the IEEE Magnetics Society. Members of the international scientific and engineering communities interested in recent developments in fundamental and applied magnetism are invited to attend and contribute to the technical sessions. The technical program will include invited and contributed papers in oral and poster sessions, invited symposia, a tutorial, and several special sessions. This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

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Rare-earth magnets may provide useful magnetic properties for quantum technologies, including quantum transduction and quantum memories. Here we calculate the band structure of magnons in ferromagnetic Er2O3. Erbium, in the +3 state in this material, has 11 electrons in a 4f shell which are shielded from the surroundings by valence electrons. The localization of these 4f electrons around the ion core results in long coherence times that make Er2O3 a viable candidate for emerging technologies and devices such as quantum memories, single photon emitters and transduction [1].

We consider fully saturated Er2O3 as a ferromagnetic insulator that hosts magnons and approximate the interaction of the spins as magnetic dipole-dipole interaction. Similar models will describe other dipole-dipole interactions spins, such as ensembles of molecular spins. The Holstein-Primakoff representation is employed to quantize the Hamiltonian. Er2O3 has 32 erbium atoms in a non-primitive cubic unit cell. The long-range nature of magnetic dipole-dipole interaction poses a challenging issue for considering magnonic structure from dipole-dipole interactions. The dipole-dipole interaction drops as a cube power of the separation between spins, thus the strength of the coupling of the 30th nearest neighbor is 4.3% of the first nearest neighbor while the number of neighbors increases. If these long-distance neighbors are ignored the magnonic dispersion will drastically change. We will describe approaches to reach convergence in the magnon dispersion for such long-range interactions.

This work was supported as part of the Center for Molecular Quantum Transduction, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award Number DE-SC0021314. 
**References** [1] Zhong, Tian and Goldner, Philippe. "Emerging rare-earth doped material platforms for quantum nanophotonics" Nanophotonics, vol. 8, no. 11, 2019, pp. 2003-2015.

Magnonic dispersion of Er2O3

Magnetic tunnel junctions (MTJs) are currently at the forefront of spintronics research because their large magnetoresistance (MR) and high sensitivity make them an attractive application prospect for magnetic memories and magnetic sensors [1]. MTJs with perpendicular magnetic anisotropy (PMA) are advantageous over in-plane devices due to their scalability, stronger remnant magnetization for a smaller demagnetizing field in the perpendicular direction, and higher signal-to-noise ratio due to the enhanced uniaxial orientation [1]. The perpendicular anisotropy is also essential to achieve faster magnetization switching and to minimize stray fields from a magnetoresistance junction.
Heusler compounds are one of the most promising candidates for MTJ electrodes because their half-metallic states can help achieve 100 % spin polarization at room temperature, leading to an infinite magnetoresistance ratio. Furthermore, these materials have additional advantages, including high Curie temperature and long spin diffusion length [2]. Recently, our group has discovered Weyl semi-metal behaviors [3], and PMA [4] in Heusler-based Co2MnGa ultrathin films, making it a promising material for exploring spin-polarising devices.
In this work, we used Co2MnGa electrodes to obtain perpendicularly magnetized MTJ stacks. We used thin-film sputtering and photolithography to fabricate the devices. We optimized the devices by precisely varying the thickness of each Co2MnGa and MgO layer and annealing conditions. We used the magneto-optical Kerr effect (MOKE) microscopy for domain imaging and MR measurements of the multilayer stacks. The MTJ showed strong PMA, and we could identify two distinct magnetic steps in the field sweep curve corresponding to the switching direction of the two magnetic layers. The devices also showed high MR, demonstrating that Co2MnGa-based perpendicular MTJs are a strong candidate for the next generation of spintronic devices.
**References** [1] Maciel, N.; Marques, E.; Naviner, L.; Zhou, Y.; Cai, H. Magnetic Tunnel Junction Applications. Sensors, 2019, 20 (1), 121. https://doi.org/10.3390/s20010121. 
[2] Elphick, K.; Frost, W.; Samiepour, M.; Kubota, T.; Takanashi, K.; Sukegawa, H.; Mitani, S.; Hirohata, A. Heusler alloys for spintronic devices: review on recent development and future perspectives. Sci. Technol. Adv. Mater., 2021, 22 (1), 235–271. https://doi.org/10.1080/14686996.2020.1812364.
[3] Zhang, Y.; Yin, Y.; Dubuis, G.; Butler, T.; Medhekar, N. V.; Granville, S. Berry curvature origin of the thickness-dependent anomalous Hall effect in a ferromagnetic Weyl semi-metal. npj Quantum Mater., 2021, 6 (1). https://doi.org/10.1038/s41535-021-00315-8.
[4] Ludbrook, B. M.; Ruck, B. J.; Granville, S. Perpendicular magnetic anisotropy in Co 2 MnGa and its anomalous Hall effect. Appl. Phys. Lett., 2017, 110 (6), 062408. https://doi.org/10.1063/1.4976078.
 

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Heusler Alloy Based Perpendicular Magnetic Tunnel Junctions

The electric-field induced spin-orbit torque (SOT) in antiferromagnetic (AFM) Weyl semimetals (WSMs) is theoretically investigated. Unlike in the ferromagnetic (FM) counterparts (1), the magnetic domain walls (DWs) in the AFM WSMs appears to lack the torsion in the magnetization and thus unable to benefit from this highly efficient mechanism that originates from the axial magnetic effect. Contrarily, our calculations illustrate that the addition of the Dzyaloshinskii-Morya interaction can introduce a twist in the magnetic moment, giving rise to the non-zero axial magnetic field and net spin current in the AFM textures subjected to an electric field. The non-zero components of the exchange fields of spin-polarized Weyl fermions are shown in Fig. 1. In the case of a Bloch DW (Fig. 1a), the direction of the driving field varies along the DW texture, significantly reducing the effect of SOT. Contrarily, the contribution of the unidirectional effective field along the Néel DW location (Fig. 1b) appears cumulative getting more efficiency. The dynamics of the DW motion is analyzed by considering the balance of energy absorption and dissipation. It reveals the need to account for the contribution of the exchange dissipation mechanism (2) beyond the Gilbert-like term to compensate the unusual superlinear rate of energy absorption by the AFM textures. The obtained DW velocity over the magnon velocity vm vs electric field shows a significant speed-up for the Néel DW in AFM WSMs (Fig.2) compared with the FM WSM as well as those in the non-topological FMs and AFMs. The results clearly indicate the significance of the axial magnetic effect in the dynamics of spin textures in AFM WSMs. 

**References:** 
(1) D. Kurebayashi and K. Nomura, "Theory for spin torque in Weyl semimetal with magnetic texture," Sci. Rep. 9, 5365 (2019). 
(2) J. H. Mentink, J. Hellsvik, D. V. Afanasiev, B. A. Ivanov, A. Kirilyuk, A. V. Kimel, O. Eriksson, M. I. Katsnelson, and Th. Rasing, "Ultrafast spin dynamics in multisublattice magnets," Phys. Rev. Lett. 108, 057202 (2012). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/2bbae04912663f1bdda97d521a0f59f3.png)

Electrical Control of Antiferromagnetic Domain Walls in Weyl Semimetals

Field-free switching of perpendicular magnetization has been observed in an epitaxial L11-ordered CuPt/CoPt bilayer [1] and attributed to spin-orbit torque (SOT) arising from the crystallographic 3m point group of the interface. Using a first-principles nonequilibrium Green’s function formalism [2] combined with the Andersen disorder model, we calculate the angular dependence of the SOT in a CuPt/CoPt bilayer and find that the magnitude of the 3m SOT is about 20% of the conventional dampinglike SOT. We study the magnetization dynamics in a perpendicularly magnetized circular nanodisk in the presence of the 3m SOT and Dzyaloshinskii-Moriya interaction using micromagnetic simulations and find that even a relatively small 3m torque can enable domain-wall-mediated field-free magnetization reversal. For further insight, we derive a collective-coordinate model describing the motion of a domain wall in a nanodisk. Numerical solutions and stability analysis of the equations of motion in this model are used to establish the roles of the dampinglike, fieldlike, and 3m SOT in the magnetization reversal process.

Wuzhang Fang and Edward Schwartz contribute equally to this work. This work was supported by NSF through Grant No. DMR-1916275, and by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0021019. 
**References** [1] L. Liu et al., Nat. Nanotechnol. 16, 277 (2021).
[2] K. D. Belashchenko, A. A. Kovalev, and M. van Schilfgaarde, Phys. Rev. Materials 3, 011401(R) (2019); Phys. Rev. B 101, 020407(R) (2020).

First principles calculation of the 3m spin

Spin precession and spin wave propagation with ferromagnetic resonance (FMR) rely essentially on the following points: a) the external field Hex is applied in order to set the precession axis of spins in the direction of Hex, b) the generated spin wave propagates in the direction perpendicular to the Hex, and c) the generation of spin waves owes its origin to the ferromagnetic spin exchange interaction acting between neighboring spins. Although in the case of the spin thermoelectric (STE) generation the precession of local 3d-electron spins in Fe3+ is thermally excited and its excitation is irrelevant to the resonance phenomenon,1 the three points noted above on FMR are considered to be important also for generating spin currents thermally in a ferrimagnetic insulator (FMI) due to the temperature gradient ▽T. Ref. 2 noted that the driving force for generating spin currents is due to the nonequilibrium dynamics of magnons in the FMI driven by ▽T.2 Based on our studies on STE generation1,3,4, we consider that the spin exchange interaction plays a major role as the driving force for the generation of spin currents in an FMI. The process in Fig. 1 shows the role of the ferromagnetic spin exchange interaction for generating spin currents in the FMI due to ▽T. We regard the ferromagnetic spin exchange interaction as the cause of the driving force for generating spin currents. Fig. 2 illustrates the generation of spin currents in YIG or Bi-substituted YIG by ▽T in the longitudinal spin Seebeck effect (LSSE). Each spin makes the spin precession of different magnitude due to ▽T, because each position of the spins is different in temperature. The precession of each spin then reaches a steady state, settling down to a uniform-mode-like state at tn from the initial state at t0 due to the exchange force working between spins. This idea well explains the generation of STE voltage for all the Hex and ▽T arrangements that have been reported in experiments so far. 
**References** 1M. Imamura, H. Asada and R. Nishimura, IEEE Trans. Magn., Vol. 58, p.4500111 (2022)
2K. Uchida, H. Adachi and T. Kikkawa, Proc. IEEE, Vol. 104, p.1946 (2016)
3M. Imamura, H. Asada and R. Nishimura, AIP Advances, Vol. 11, p.035143 (2021)
4M. Imamura, H. Asada and R. Nishimura, J. Magn. Magn. Mater., Vol. 550, p.169081 (2022) 
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Underlying Mechanism of the Driving Force for Generating Spin Currents Thermally in a Ferrimagnetic Insulator Due to a Temperature Gradient

Competition between the symmetric and antisymmetric exchange interactions can give rise to non-trivial magnetic spin textures that are both physically interesting and
technologically promising. Here, I present results from a recent experiment conducted at LCLS that probed the magnetic fluctuations of an amorphous FeGe film. In this experiment, the
magnetic phase transition between a helical and a paramagnetic state was investigated by means of X-ray photon fluctuation spectroscopy. By analyzing the statistical distribution of photon
arrival events, sub-nanosecond timescales could be probed. This work provides both insight into the stabilization of magnetic spin textures as well as a template for future sub-nanosecond
experiments that are now available due to X-ray Free Electron Lasers.

Investigation of Sub Nanosecond Fluctuations on Amorphous FeGe Near a Magnetic Phase Transition

To obtain the magnetic properties of silicon steel in different directions, it is necessary to establish a magnetostrictive model related to the anisotropy of silicon steel. Studies on the magnetostrictive model based on the magnetic domain deflection can simulate the hysteresis magnetization of silicon steel in different magnetization directions [1, 2]. But it did not consider the effect of stress. This paper proposed a hysteresis anisotropy-dependent magnetostriction model based on the free energy of silicon steel, which can consider stress-induced and magnetocrystalline anisotropy. 
II Method and Discussion 
Firstly, the two-dimensional free energy model of silicon steel, which includes magnetic field energy, magnetic crystal anisotropy energy and stress anisotropic energy, is incorporated into the anhysteretic magnetization parameter Man, which is coupled with the Jiles-Atherton model, as shown in Fig.1. Based on the two-dimensional free energy model and thermodynamic principle, the hysteresis anisotropy-dependent magnetostriction model of silicon steel is proposed. Then, to obtain the magnetic field and deformation parameters related to stress-induced and magnetocrystalline anisotropy, the magnetostrictive deformation curves of silicon steel at different magnetization directions are measured. Finally, based on the measured parameters of the proposed model, magnetostrictive loops with the magnetic field under varying magnetization directions are simulated. By comparing the measurement results with the simulation results, the effectiveness and accuracy of the proposed model are verified, as shown in Fig.2. 
III Conclusion 
In this paper, a hysteresis anisotropy-dependent magnetostriction model of silicon steel is proposed. The measured and simulated results show that the magnetostrictive strain decreases with the stress increases in a certain range. The magnetostrictive strain will be larger and anisotropy will be more obvious with the increase of magnetization direction under the same stress. 
**References:** [1] A.P.S. Baghel, B. Sai Ram, K. Chwastek, et al. Hysteresis modelling of GO laminations for arbitrary in-plane directions taking into account the dynamics of orthogonal domain walls[J]. Journal of Magnetism and Magnetic Materials, 2016, 418:14-20. 
[2] S. Mbengue, N. Buiron, and V. Lanfranchi. Macroscopic modeling of anisotropic magnetostriction and magnetization in soft ferromagnetic materials[J]. Journal of Magnetism and Magnetic Materials, 2016, 404:74-78. 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/18846a1231a80077d6117c1919bda102.png) 
Fig.1 Flow chart of modeling magnetostriction property considering anisotropy 
![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/54659d447d02b6f54992a18baf8b0a6e.png) 
Fig.2 The hysteresis loops and magnetostrictive loops under different stress when the magnetization directions are 0°, 30° and 90°

Magnetostriction Property Modeling of Silicon Steel Considering Stress induced and Magnetocrystalline Anisotropy

The crystallographic orientation plays the foremost significant role in the modern magnetic heterostructure devices, especially in the arena of spintronics device. In terms of magnetic property, domain orientation is solely dependent on the structural homogeneity. This research work deals with the development of epitaxial thin films of Ni/NiO on various single-crystalline substrates including sapphire (0006) and LiNbO3 (104). Pulsed laser deposition (PLD) technique was used at 650°C in constant oxygen pressure of 0.01 mbar to deposit films on reported substrates. Phase mixture of Ni (ferromagnetic)/NiO (antiferromagnetic) in the thin films was achieved via hydrogen reduction annealing at 600°C for 30 minutes which induced point defects by incorporating oxygen vacancies into the as-deposited pure NiO crystal structure. Two major structural characterizations— X-ray diffraction and Scanning electron microscopy were done to find out the desired phases and surface morphology. X-ray diffraction shows preferential growth of NiO on both sapphire and lithium niobate along the (111) plane (XRD peak at 37.25° on sapphire, 37.28° on LiNbO3), sharp peaks of Ni at 44.4° and 50.3° on sapphire and lithium niobate substrates indicate that a handful amount of NiO converted to Ni phase. Additionally, Rietveld refinement using Diffrac plus Topas shows 99.7% and 99.6% Ni phase presence after doing the reduction annealing of NiO thin films on sapphire and lithium niobate substrates accordingly. Moreover, single crystalline domains with two different crystallographic orientations (due to having twin phase) were noticed at 60° apart via phi scan and pole figure techniques. Scanning electron microscopy images with Energy dispersive spectroscopy shows the surface homogeneity with atomic percentages of Ni in both annealed thin films. Temperature and field dependent magnetization data collected using SQUID magnetometer show ferromagnetism and antiferromagnetism in pure Ni and NiO films, respectively. Spin canting has been observed in the phase mixture, holding a potential wide range magnetic exchange coupled phenomena. 
**References:** 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/f3cd904bc40e975e3862c691cf220686.png) 
Fig .1: Pole figure of NiO (111) film grown on Sapphire (0006) 
![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/e5d7e9f26066c64d61776e0c0ece9e92.png) 
Fig.2 : Phi Scan of Ni (111) film grown on Sapphire (0006)

In depth structural and magnetic study of Ni/NiO epitaxial thin films on various single crystalline substrates grown using pulsed laser deposition

In this paper, we mainly focus on the magnetic and magnetocaloric properties of YbVO3 single crystals. As shown in Fig.1 (a, b) the grown crystals unveil several phase transitions close to 104 K, 65 K and 20 K. The observed 104 K feature originates from the occurrence of a C-type antiferromagnetic ordering of V3+ magnetic moments while that close to 65 K corresponds to the transformation of the established C-type spin ordering (SO) into a G-type antiferromagnetic ordering which is associated with a change in the orbital ordering (OO) from G-type to C-type. The phase transition taking place close to 20 K is more probably attributed to the ordering of Yb3+ magnetic moments. On the other hand, the below 65 K ordering state constituted of G-type SO/C-type OO remains very stable even under sufficiently high magnetic fields as reported in Fig.1-b. This underlines the weakness of f-d exchange couplings in the YbVO3 vanadate being in contrast with other RVO3 orthovanadates containing smaller rare earth elements such as DyVO3 compound [1] . Additionally, we particularly demonstrate that the complex electronic and magnetic structures of YbVO3 result in interesting levels of thermal effects over a wide temperature range including a giant negative magnetocaloric effect close to 60 K. In fact, the maximum entropy change is found (Fig. 1-c) to be almost 12 J/kg K in the magnetic field change of 7 T applied along the c axis and the ab-plane at 64.25 K and 65.5 K, respectively. More interestingly, the strong magnetic anisotropy shown by the V3+ sublattice (Fig. 1-a) results in a large rotating magnetocaloric effect (RMCE) at relatively high temperatures (Fig.1-d). This would open the avenue for the design of efficient magnetic refrigerators with simplified designs [2]. Our findings are discussed in the frame of DFT calculations.

Strong spin orbital coupling

The characterization and analysis of magnetization dynamics and magnetic damping of antiferromagnetic magnons is important in the field of antiferromagnetic
spintronics. This is primarily because antiferromagnets have magnetic resonances in the THz range as compared to ferromagnetic resonance which tends to occur in the GHz range. In this
work, we employ frequency-domain THz spectroscopy to explore the antiferromagnetic resonance frequency associated with monocrystalline NiO [1]. Specifically, a continuous-wave THz
spectroscopy system is used to measure the antiferromagnetic resonance of three NiO cuts (111), (110), and (100). To find the absorption peak, a reference measurement is taken in addition
to the NiO measurement. Raw data from the reference and NiO can be visually compared to see two effects: the THz system instrument response and Fabry-Perot interference pattern.
During analysis, the instrument response and Fabry-Perot pattern are subtracted so that a clear absorption peak at the resonant frequency of NiO can be observed. An antiferromagnetic
resonance, near 1 THz, is seen in each cut of NiO. Our results demonstrate the utility of working in the frequency domain to characterize antiferromagnetic materials that will be used
eventually for ultrafast antiferromagnetic spintronic device technologies. 

**References:** 

[1] Moriyama, Takahiro, et al., Physical Review Materials 3.5, 051402 (2019)

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Automated Acquisition of Switching Dynamics in Reflexion Mode of MRAM Magnetic Tunnel Junctions

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