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poster

MMM 2022

November 07, 2022

Minneapolis, United States

Magnetocaloric properties and exchange bias in arc melted Mn5Sn3 alloy

Magnetic refrigeration (MR), exploiting the adiabatic demagnetization phenomena, is preferable over conventional cooling technology due to its high efficiency with environment friendly method 1-3. Owing to this, the earth-abundant Mn-based alloys, i.e. Mn5Sn3, crystallizes in Ni2In type hexagonal structure (space group P63/mmc), occupies two non-equivalently sites with opposite spin alignment: MnI at 2a site with a moment of 0.8 μB and MnII at 2(d) site with a moment of 3.8 μB and Sn atom occupies 2c site. The temperature and field-dependent dc magnetization measurements have been carried out to study the MCE and exchange bias in Mn5Sn3 alloy. The M (T) curve at 100 Oe shows ordering temperature at Tc ~ 227 K and spin glass (SG) transition at Tg ~ 110 K Fig. 1a. The origin of SG is due to geometrical frustration, that comes from vacancy and disordering present at Mn2d site. Furthermore, the M (H) hysteresis loop at 5 K reveals the typical soft ferromagnetic behaviour, saturation magnetisation (MS) of 62 emu/g Fig.1(b), where MH loop slightly shifted towards a negative field direction, indicating the presence of exchange bias phenomena with exchange bias field (HEB) 5.67 mT at 50 K. Apart from this, Isothermal magnetic entropy change (ΔSM(T)) is (calculated Using Maxwell equation) 2.16 J/Kg-K at 5 T Fig. 2, also ΔSM(T) evolve with applied magnetic field as - ΔSM(T) = aHn, where n is local exponent, power law fit gives n = 0.649 (1) Inset of Fig 2(a). From Inset fig. 2(b), It is quite apparent that all the normalized entropy curves with various ΔH values collapse into a single curve, confirming second-order magnetic phase transition. The relative cooling power (RCP) value is obtained as 242 J/kg for a field change of 5 T which is significantly larger than the earlier reported Mn5Sn3 study 4. Hence, with negligible thermal/magnetic hysteresis and reasonable RCP, the Mn5Sn3 is prominent candidate for MR devices.

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John Peter Nunez and 4 other authors

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