We studied the spin-Hall magnetotransport across an epitaxial and nonmagnetic Y3Al5O12 (YAG) insertion layer in the Pt/Tb3Fe5O12 (TbIG) system. YAG (tYAG nm) /TbIG (30 nm) bilayers were grown on Ga3Gd5O12 (GGG) (111) substrates by pulsed laser deposition, before 5 nm of Pt was sputtered on the sample and patterned into Hall bars. tYAG dependences of anomalous Hall resistance (RAHE, with linear background contribution subtracted) were measured. At low tYAG values, a hysteretic RAHE loop is observed at low fields but with reducing effect with rising tYAG. At high fields RAHE behaviour is present, with magnitudes comparable with Pt/TbIG sample. The temperature dependence of low- and high-field RAHE were investigated, with the goal of identifying the origin of such discrepancies and further guidance for interfacial design of spintronics devices. References:

Fig. 1. Field dependence of RAHE of Pt/YAG/TbIG samples at 10 K (a) and 300 K (b).