Spintronics is a prime candidate for information storage and logic devices due to its significant advantages over traditional CMOS technology, such as low-power consumption, non-volatility, and high endurance. Recently, spin-gapless semiconductors (SGSs) have been introduced for modern spintronics-based applications and are promising candidates for designing quantum computing, data storage, coding, and decoding. In SGSs, spin-polarized charge carriers or spin current are the primary functions of these magnetic materials 1. SGS materials such as CoFeMnSi Heusler Alloy offer high spin polarization (64%), high Curie temperature (620 K), and low damping constant (0.0046) are all intriguing properties that can be used in room-temperature spintronic device applications 2. SGS has unique features such as almost temperature-independent carrier concentration, and quantum linear magnetoresistance in a low-temperature range 3.
In this abstract, the effect of changing the sputtering power from 30W to 50W and 90W on an RF sputtered thin film of CoFeMnSi (CFMS) Heusler alloy with a nominal thickness of 30 nm with temperature-dependent electrical and magneto-transport properties has been studied. Fig. 1(a) shows Hall resistivity as a function of applied magnetic field for CFMS 90W (30nm) thin-film recorded at 10K, 50K, 100K, 200K, 250K, and 300K. Fig. 1(b) demonstrates the SGS behavior of the material in nearly temperature-independent carriers' concentrations with the same order up to 300K. Fig. 1(c) depicts magnetoresistance (MR) curves of 90W (30nm) CFMS thin film within the temperature range of 10K to 200K. The MR curves exhibit a linear field-dependent trend. In this temperature range, the observed MR is negative. The peak presence at zero magnetic fields signifies the localization and as we increase the field, the path contributing to localization is go out of the phase.
1. D. Rani, L, Bainsla, A. Alam, and K. G. Suresh, “Spin-gapless semiconductors: Fundamental and applied aspects”, Journal of Applied Physics, vol. 128, no. 22, 2020. 2. L. Bainsla, A. I. Mallick, M. Raja, A. K. Nigam, B. Varaprasad, Y. Takahashi, A. Alam, K. G. Suresh, and K. Hono “Spin gapless semiconducting behavior in equiatomic quaternary CoFeMnSi Heusler alloy”, Physical Review B, vol. 91, 2015. 3. X. L. Wang, “Proposal for a new class of materials: spin gapless semiconductors”, Physical review letters, vol. 100, 2008.