United States

We report the experimental demonstration of long-range orbital torques generated by Nb and Ru and detected by spin-torque ferromagnetic resonance (ST-FMR) measurements in Nb/Ni and Ru/Ni bilayers. We identify the orbital torques from the sign-reversal and a strong enhancement in the damping-like torque observed in Nb (Ru)/Ni bilayers as compared to Nb (Ru)/FeCoB bilayers as theoretically predicted1. The long-range nature of orbital transport in the ferromagnet was revealed by varying the thickness of Ni in Nb (Ru)/Ni bilayers which is markedly different compared to the regular spin absorption in the ferromagnet that takes place in the first few layers confirming the recent prediction2. Finally, we show that the external injection of orbital current in a heavy metal such as Pt can convert the orbital current into a spin-current leading to higher switching efficiency and the enhanced spin-current generation that could both be potentially attractive for the application3,4.&lt;br&gt;&lt;br&gt;
**References** 1. Go, D. &amp; Lee, H.-W. Orbital torque: Torque generation by orbital current injection. Phys. Rev. Res. 2, 013177 (2020).
2. Go, D. et al. Long-Range Orbital Magnetoelectric Torque in Ferromagnets. arXiv 2106.07928, 1–6 (2021).
3. Ding, S. et al. Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques. Phys. Rev. Lett. 125, 177201 (2020).
4. Go, D., Jo, D., Lee, H.-W., Kläui, M. &amp; Mokrousov, Y. Orbitronics: Orbital currents in solids. EPL (Europhysics Lett. 135, 37001 (2021).
5. &lt;br&gt;&lt;br&gt;
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MMM 2022

Detection of long range orbital torques

We report the experimental demonstration of long-range orbital torques generated by Nb and Ru and detected by spin-torque ferromagnetic resonance (ST-FMR) measurements in Nb/Ni and Ru/Ni bilayers. We identify the orbital torques from the sign-reversal and a strong enhancement in the damping-like torque observed in Nb (Ru)/Ni bilayers as compared to Nb (Ru)/FeCoB bilayers as theoretically predicted1. The long-range nature of orbital transport in the ferromagnet was revealed by varying the thickness of Ni in Nb (Ru)/Ni bilayers which is markedly different compared to the regular spin absorption in the ferromagnet that takes place in the first few layers confirming the recent prediction2. Finally, we show that the external injection of orbital current in a heavy metal such as Pt can convert the orbital current into a spin-current leading to higher switching efficiency and the enhanced spin-current generation that could both be potentially attractive for the application3,4. 
**References** 1. Go, D. & Lee, H.-W. Orbital torque: Torque generation by orbital current injection. Phys. Rev. Res. 2, 013177 (2020).
2. Go, D. et al. Long-Range Orbital Magnetoelectric Torque in Ferromagnets. arXiv 2106.07928, 1–6 (2021).
3. Ding, S. et al. Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques. Phys. Rev. Lett. 125, 177201 (2020).
4. Go, D., Jo, D., Lee, H.-W., Kläui, M. & Mokrousov, Y. Orbitronics: Orbital currents in solids. EPL (Europhysics Lett. 135, 37001 (2021).
5. 
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technical paper

#### Welcome to the 67th Annual Conference on Magnetism and Magnetic Materials, MMM 2022!

The Conference was held from October 31 to November 4 and offers both in-person and on-demand content.

MMM 2022 is sponsored jointly by AIP Publishing and the IEEE Magnetics Society. Members of the international scientific and engineering communities interested in recent developments in fundamental and applied magnetism are invited to attend and contribute to the technical sessions. The technical program will include invited and contributed papers in oral and poster sessions, invited symposia, a tutorial, and several special sessions. This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

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Within magnetic materials, anisotropic magnetoresistance (AMR) measures the dependence of the resistivity on the angle between the high magnetic susceptibility direction of the magnetic order and the current direction. When analyzed using spectral decomposition, the AMR of most magnetic materials is composed of even harmonics the most common of which are 2-fold (C2) and 4-fold (C4) arising from s-d scattering and crystal field effects respectively. The generation of odd harmonics in the spectral decomposition of the AMR are observed in magnetic films when the magnetic film is combined with another non-magnetic material to form a heterostructure. The observed unidirectional AMR is a result of the explicit breaking of the spatial inversion symmetry at the interface of the engineered heterostructure. Alternatively, the spatial inversion symmetry may be broken internally within the magnetic film under the application of a magnetic field leading to the observation of signatures of unidirectional AMR in the spectral decomposition without the presence of the non-magnetic material. In this work, we observe odd spectral harmonics (C1 and C3) associated with the presence of unidirectional AMR in 20 nm thin-films of antiferromagnetic FeRh measured at 20K, as seen in Fig. 1(A). In Fig. 1(B), the presence of the odd spectral harmonics is confirmed using a tight-binding representation of the tetragonal FeRh lattice in the antiferromagnetic phase where the transport quantities are calculated using the non-equilibrium Green’s function formalism. Furthermore, we attribute the presence of the C1 and C3 harmonics to the magnetic moment that the Rh atoms develop when immersed in an external in-plane magnetic field. We quantify the size of the inherent unidirectional AMR component as a function of the applied magnetic field and show that the internal unidirectional AMR component is non-negligible and omnipresent in AMR measurements even in the absence of non-magnetic layers. 
**References** J. Oh, L.Humbard, V. Humbert, AIP Advances 9, 045016 (2019)
T. Huong T. Nguyen, V.Nguyen, Communications Physics volume 4, Article number: 247 (2021)
 
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Intrinsic Unidirectional Anisotropic Magnetoresistance in Thin Film FeRh

Compensated ferrimagnets [1,2] with two inequivalent magnetic sublattices can exhibit finite spin polarization, anomalous Hall effect and tunneling magnetoresistance like a ferromagnet, even when the net magnetization exactly vanishes at the magnetic compensation point. This material class has attractive potential for high-density, ultrafast, and low-power spintronic applications. Cubic Mn2RuxGa (MRG) is a typical example of compensated ferrimagnet with high spin polarization and high tunability of compensation temperature by freely varying the Ru content x over a broad range (0.3 < x < 1.0) [3]. Here, we systematically studied MRG-based polycrystalline ingots prepared by arc melting, followed by annealing at 1073 K for seven days. We surprisingly found that, in equilibrium bulk form, the cubic structure is unstable when x < 0.75, which substantially reduces the tunability of MRG. We concluded that previously reported Ru-deficient MRG thin films are mostly metastable. At equilibrium, MRG can never compensate below ~350 K.
To overcome this limitation, we alloy MRG with a fourth element V, which helps to stabilize the cubic structure while providing less valence electron than Mn and Ru. We systematically investigate the Mn2Ru0.75VyGa quaternary system. Figure 1(a) shows the temperature dependence of magnetization M(T) measured with a small applied magnetic field of 0.1 T. Adding V consistently reduces the compensation temperature from 380 K to 260 K. For y = 0.1, the M-H loop at 300 K in Fig. 1(b) shows a modest increase of the coercivity (< 0.1 T) due to the vanishing net magnetization. The sign reversal of the anomalous Hall effect (AHE) shown in Fig. 2 provides another evidence that the magnetic compensation has indeed achieved near 300 K. In the talk, we will also discuss the effect of V doping on the intrinsic and extrinsic contributions of AHE. 
**References** [1] Joseph Finley and Luqiao Liu, Applied Physics Letters, 116, 110501 (2020)
[2] Se Kwon Kim et al., Nature Materials, 21, 24-34 (2022)
[3] H. Kurt et al., Physical Review Letters, 112, 027201 (2014) 

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Tailoring compensated ferrimagnetic state in quaternary Mn Ru

Some Heusler compounds were predicted to have half-metallic electronic structures [1], which are important properties in spintronics. Then Co-substituted Mn3Ga Heusler films, which exhibit perpendicular magnetic anisotropy (PMA) and the magnetic transition from PMA to in-plane magnetic anisotropy (IMA), were considered to be potential spintronic materials [2,3]. In this work, we have investigated electronic structures of Mn3-xCoxGa films by employing synchrotron radiation-excited soft X-ray absorption spectroscopy (XAS) and soft X-ray magnetic circular dichroism (XMCD). According to Co 2p XAS and XMCD, the substituted Co ions in Mn3-xCoxGa consist of ferromagnetic metallic Co clusters and divalent Co ions with disordered magnetic moments. Mn 2p XAS and XMCD show that Mn ions at both the octahedral and tetrahedral sites are nearly divalent, reflecting non Jahn-Teller ions, and that the magnetic moments of Mn ions are polarized along the ordered magnetic moments of the substituted Co ions. Angle-dependent Co 2p XMCD results agree with the weak PMA-IMA magnetic anisotropy transition with increasing Co content. This work reveals that the magnetic anisotropy transition in Mn3-xCoxGa is determined mainly by the ferromagnetic metallic Co clusters of the substituted Co ions.
The financial funding from the NRF of Korea (Project No. 2019R1A2C1004929) is gratefully acknowledged. 
**References** [1] R. A. de Groot, et al., Phys. Rev. Lett. 50, 2024 (1983).
[2] H. Kurt, et al., Phys. Rev. B 83, 020405(R) (2011).
[3] Kyujoon Lee, et al., J. Alloys Compd. 858, 1582884 (2021).

XAS and XMCD Study of the Magnetic Anisotropy Transition in Co substituted Mn3Ga Heusler Films

The development of antiferromagnetic (AFM) spintronics is an active field with great potential for improving energy consumption, reducing interference and decreasing sizes when compared to traditional spintronics. This requires the development of novel concepts and functionalities which allow control over the properties of a device containing an AFM layer.
We present in this work a new device concept in which the spin configuration of an AFM insulator (FeF2) can be modified taking advantage of spin-orbit coupling (SOC) existing in heavy metals (HM) such as W or Pt. The device consists of a trilayer: HM|AFM|FM, therefore the top FM interface can be used to monitor the changes in the AFM spin configuration.
We performed Magneto-Optical Kerr effect (MOKE) to measure the FM hysteresis loops as a function of temperature (T) and applied current (I). We found that the exchange bias (EB) and coercivity (Hc) produced at the AFM-FM top interface can be strongly modified by a current (I) passed through the HM|AFM bottom interface. This shows that an active spin-orbit torque (SOT) is produced at the HM|AFM bottom interface that reaches the AFM|FM top interface and modifies the reversal of the FM layer. Temperature-dependent control experiments using normal metals (NM) such as Au in NM|AFM|FM and without AFM in HM|FM confirm that the effect is produced by the SOT induced by the HM and is not caused by thermal heating, Oersted field or other potentially spurious effects.
This research was supported by the Department of Energy’s Office of Basic Energy Science, under grant # DE-FG02-87ER45332. 
**References**

Manipulation of Exchange Bias Using Spin Orbit Torque

The transport of magnons in materials with topological non-trivial ground state has been investigated in various platforms (ferro- and antiferromagnets) and is characterized by anomalous mechanisms such as the thermal Hall effect and the magnon Nernst effect. Usually, these investigations are done in the framework of the Linear Spin Wave Theory and the interactions between magnons are ignored. In fact, due to the bosonic nature of magnons, such interactions can have a dramatic impact on the magnon lifetime [Chernyshev, AL et al., Phys. Rev. Lett. 117, 187203 (2016)] and band structure [Mook et al., Phys. Rev. X 11, 021061 (2021)], as recently demonstrated. In other words, these interactions are ubiquitous and can cause the alteration of the energy bands and the transport properties of the system, including damping and topological phase transitions [Y.S. Lu et al., Phys. Rev. Lett. 127, 217202 (2021)]. In this work, we investigate the influence of magnon-magnon interactions on the anomalous transport of magnons in a topologically non-trivial honeycomb antiferromagnet. Focusing on the magnon spin Nernst effect, we uncover the impact of these interactions on the magnon lifetime, band structure and anomalous transport upon increasing the temperature. 
**References** Chernyshev, AL et al., Phys. Rev. Lett. 117, 187203 (2016)
Mook et al., Phys. Rev. X 11, 021061 (2021)
Y.S. Lu et al., Phys. Rev. Lett. 127, 217202 (2021) 
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Impact of Interactions on Topological Magnonic Transport

Synthetic antiferromagnets (SAFs) are of interest in a wide variety of spintronic applications owing to their net zero magnetisation and inherent tunability arising from control over complex stacking sequences [1]. They show very fast domain wall (DW) motion in response to spin torques [2].
Here we describe measurements of the current-driven DW motion in each of the separate magnetic sublattices of a SAF with structure Ta/[Ru/Pt/CoB/Ru/Pt/CoFeB]×5/Ru/Pt which displays both perpendicular magnetic anisotropy (PMA) and the Dzyaloshinskii-Moriya interaction (DMI). The thickness of the Ru layers is tuned to provide AF coupling between each pair of layers. The thicknesses of the alternating CoB and CoFeB layers are tuned to give net zero magnetisation (as measured by SQUID magnetometry) at a wide range of fields up to ~50 mT.
The magnetic films were grown on Si3N4 membranes and imaged with scanning transmission x-ray microscopy (STXM). They were patterned into 2 µm wide wires with Cu leads attached to each end. The distinct chemical composition of the two sublattices means that we could use the element specificity of STXM to observe the CoFeB separately by imaging at the Fe L3 edge, whilst contrast at the Co L3 edge is dominated by the other sublattice of CoB layers. Inverted domain structures observed at these two edges with XMCD-STXM are shown in Fig. 1, confirm the SAF ordering of the layers. Current pulses drive domain wall motion, as shown in Fig. 2, with average velocities up to ~ 40 m/s achieved at current densities as low as 3 × 1011 A/m2. These results demonstrate a low depinning current and fast motion compared to comparable FM multilayers we have previously studied, suggesting that domain walls in SAF heterostructures are superior to their ferromagnetic equivalents for low energy consumption racetrack technologies. 
**References** [1] R. A. Duine et al., Nature Phys. 14, 217 (2018)
[2] S.-H. Yang et al., Nature Nanotech. 10, 221 (2015) 

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Current Driven Domain Wall Motion in a Synthetic Antiferromagnet Multilayer

Europium (Eu) metal has a body centered cubic crystal structure which, upon a paramagnetic-to-helical magnetic transition, undergoes a body centered tetragonal distortion. The magnetic helix appears below Néel temperature (TN) of ~90 K, and the presence of a magnetic field gives rise to conical helimagnet [1,2]. We have prepared Eu metal thin films on Si (001) substrates using Eu metal as a target by pulsed laser deposition (PLD). The transport measurement shows the helical antiferromagnetic transition at 88 K, and a thermal hysteresis reveals the first-order nature of the phase transition. We present the magnetoresistance (MR) of Eu thin films when the magnetic field (B) is applied both out-of-plane and in-plane. We found, at temperatures below TN, the MR is positive whereas above TN the MR is negative. We also observed the hysteretic oscillation above 30 K and below the Néel temperature. The hysteretic oscillations observed in the MR is believed to be associated with the change in the distribution of the antiferromagnetic domains in Eu caused by the interplay of the applied magnetic field and the strain in the films.

This work was supported by NSF (DMR-1710512) and the USDOE (DE-SC0020074) 
**References** [1] C. E. Olsen, N. G. Nereson, and G. P. Arnold, J. Appl. Phys., 33, 1135 (1962).
[2] N.G. Nereson, C. E. Olsen, and G. P. Arnold, Phys. Rev. 135, A176, (1964).

Magnetoresistance in Helical Antiferromagnet Eu Metal Thin Films

Transition metal nitrides with ferrimagnetism have recently attracted attention because of their skyrmionic functionalities at room temperature [1,2], and the topological Hall effect (THE) was observed for Mn based transition metal nitrides such as Mn4N thin films [3,4]. The conventional spin texture for the film is collinear with perpendicular magnetic anistoropy, which is remarkably sensitive to the growing temperature as well as substrate-induced strain [5,6]. Therefore, these characterisitcs of the Mn4N warrants further study how the spin texture is modulated by the method of elemental doping, and it is our expectation that the turnability of spin textures of the films could allow us to realize possible skyrmionic devices that work under no external magnetic field. In this study, we investigated the THE for the sputter-deposited (111)- and (110)-oriented Mn4(N,B) films aiming the control of topological spin textures by elemental-doping of B [7].
Figures 1 shows the representative THE for the 111-oriented Mn4N film without B at 300K. The THE component was extracted from the total AHE component, suggesting the presence of non-coplanar spin texture for the films at room temperature. Figure 2 shows the measurement temperature (T) dependence of ρxyTHE/ρxyAHE ratio for the films with and without B. The ratio increased at lower T, suggesting the stabilization of non-coplanar spin textrue at lower T. In addition, supression of THE was observed by B for all T. These results show a dilution effect in the spin frustration state with topological spin texture by B. Conversely, slight increase of THE was observed by B in the case of 110-oriented films. Therefore, B in the antiperovskite systems such as Mn4N could acts as an efficient suppressor or booster of frustrated exchange interactions between Mn atoms. 
**References** [1] C. T. Ma, et al., APL. 119, 192406 (2021).
[2] T. Bayaraa, et al., PRL. 127, 217204 (2021).
[3] G. Wang, et al., APL. 113, 122403 (2018).
[4] M. Meng, et al., APL. 112, 132402 (2018).
[5] S. Isogami, et al., JMMM, in press (2022).
[6] T. Hirose, et al., AIP Adv. 10, 025117 (2020);
[7] S. Isogami, et al., JAP. 131, 073904 (2022).
 
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Tailored non collinear magnetic structure in 111

Antiferromagnetic materials opened up a new avenue of research with potential use in spintronic devices [1]. Compared to their ferromagnetic counterparts antiferromagnets exhibit faster dynamics, insensitivity to the external magnetic fields, and absence of stray fields promising higher integration density.
Some functionalities of the antiferromagnetic spintronic devices such as readout using anisotropic magnetoresistance or reorientation of magnetic axis using current-induced spin-orbit torque [2] are directly derived from their ferromagnetic counterparts whereas other functionalities are unique to the antiferromagnets. One of these is the Quenching of the antiferromagnet into high resistivity states using electrical and optical pulses which was recently discovered in epitaxially grown thin CuMnAs films [3]. This effect is based on the change of the magnetic structure of the antiferromagnet induced by the application of high energy pulse driving the system to the vicinity of Néel temperature and its subsequent fast cooling resulting in quenching of the highly resistive disordered magnetic state. The observed changes of resistivity reach tens of percent at room temperature and even 100 percent at low temperatures and exceed by two orders of magnitude the change of the resistivity based on anisotropic magnetoresistance induced by the reorientation of the spin axis [2].

In this contribution, we provide an overview of detailed experimental characterization of quenching of CuMnAs using a single ultrashort laser pulse for excitation. We focus on the optimization of the electrical readout response of the Hall-bar devices with regard to the size and position (Fig.1) of the laser spot, pulse length, and fluency. It provides an overview of the response for CuMnAs films with varying thickness and substrate material. Lastly, this contribution evaluates the effects of permanent damage caused by laser pulse excitation with proposed damage mitigation techniques. 
**References** [1] Jungwirth, T., Marti, X., Wadley, P. et al. Antiferromagnetic spintronics. Nature Nanotech 11, 231–241 (2016). https://doi.org/10.1038/nnano.2016.18
[2] Wadley, P. et al. Electrical switching of an antiferromagnet. Science 351, 587–590 (2016). https://doi.org/10.1126/science.aab1031
[3] Kašpar, Z., Surýnek, M., Zubáč, J. et al. Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses. Nat Electron 4, 30–37 (2021). https://doi.org/10.1038/s41928-020-00506-4
 
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Characterization of laser pulse induced quenching of resistivity of antiferromagnetic CuMnAs

Room-temperature skyrmions have been presented as potential candidates for encoding information bits in several types of new spintronic devices [1]. There have been many recent progresses allowing to stabilize sub-100 nm skyrmions at room temperature in crystalline ferromagnetic thick layers or in (amorphous) thin magnetic multilayers (MML) [2]. In most case, at least in extended films or large structures, the application of relatively large perpendicular field (a few 10 mT) is needed which might be unfavorable for most of the anticipated skyrmion based devices. Hence, the stabilization of zero-field isolated skyrmions or skyrmion lattices is an important step towards application. There are recent works demonstrating isolated zero-field skyrmions stabilized due to interlayer exchange in polycrystalline [3], epitaxial [4] or exchange biased [5] trilayers. Here we demonstrate a new approach showing that room-temperature zero-field skyrmion lattices can be stabilized in MML. We develop a system in which perpendicular magnetic anisotropy, chiral order and bias field strength, through a non-magnetic spacer, can be adjusted simultaneously. Typical stacking sequence is schematically presented in Figure 1 (a). The samples have been characterized first by standard magnetometry (Fig. 1b). Relying on the interlayer electronic coupling to an adjacent bias magnetic layer with strong perpendicular magnetic anisotropy (uniform configuration), we demonstrate by Magnetic Force Microscopy that the remnant wormy-stripe “as-grown” domains (Fig. 1d) can be turned into skyrmion lattice phase (Fig. 1c). The skyrmion density and size can be modified by finely tuning the thicknesses of the layers allowing the control of the parameters related in the stabilization of the lattices. ANR TOPSKY (ANR-17-CE24-0025), DARPA TEE program (MIPR#HR0011831554) and EU SKYTOP (H2020 FET Proactive 824123) are acknowledged for financial support. 
**References** [1] A. Fert, N. Reyren, V. Cros, Nat. Rev. Mat. 2, 17031 (2017)
[2] C. Moreau-Luchaire et al., Nat. Nanotechnol. 11, 444 (2016)
[3] G. Chen et al., Appl. Phys. Lett. 106, 242404 (2015)
[4] R. Loconte et al., doi : 10.1021/acs.nanolett.0c00137
[5] K. G. Rana et al., Phys. Rev. Applied 13, 044079 (2020)
 
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Zero field room

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