United States

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of the current-driven switching of antiferromagnets. Harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect in heavy-metal/ferromagnet systems. However, the harmonic measurement of spin-orbit torque technique has never been verified in antiferromagnetic heterostructures. Here, we report for the first time harmonic measurements in Pt/a-Fe2O3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/a-Fe2O3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.&lt;br&gt;

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MMM 2022

Third Harmonic Characterization of Antiferromagnetic Heterostructures

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of the current-driven switching of antiferromagnets. Harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect in heavy-metal/ferromagnet systems. However, the harmonic measurement of spin-orbit torque technique has never been verified in antiferromagnetic heterostructures. Here, we report for the first time harmonic measurements in Pt/a-Fe2O3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/a-Fe2O3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices. 

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technical paper

#### Welcome to the 67th Annual Conference on Magnetism and Magnetic Materials, MMM 2022!

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Cobalt oxides have long been understood to display spin-state crossovers. A very different situation was recently uncovered in Pr-containing cobalt oxides, where a first-order spin-state/structural/metal-insulator transition occurs, driven by a remarkable Pr valence transition. Such valence transitions offer appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). In this work we combine epitaxy with synchrotron diffraction, scanning transmission electron microscopy with electron energy loss spectroscopy, electronic and magnetic measurements, polarized neutron reflectometry, and density-functional calculations to make the first full study of strained films of the perovskite (Pr1-yYy)1-xCaxCoO3-Î´. Remarkably, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature (Fig. 1). The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression (Fig. 2), exposing a potential novel spin-state quantum critical point [1]. Work supported by DOE through the Center for Quantum Materials.

Strain Stabilized Room

Spintronics utilizes the spin orbit coupling (SOC) of a heavy metal layer to generate spin currents by the spin Hall effect (SHE), which can then induce spin orbit torques (SOT) to alter the magnetization of an adjacent ferromagnet. SOT can be both fast and energy-efficient and enable technological applications in spintronic devices such as spin Hall nano-oscillators (SHNOs) [1-3], SOT based magnetic random access memory(SOT-MRAM), and spin logic devices [4,5]. However, spin currents generated by SOC also exist in magnetic materials. Recent studies evidenced very large emission of spin currents and strong SOT for magnetization switching in ferrimagnets near compensation [6,7].
In the present study nearly compensated GdFeCo, and Py, are used as spin Hall layer and ferromagnetic layer, respectively. We studied the tunable behaviour of both damping-like(DL) and field-like(FL) SOT efficiencies (θDL and θFL) with respect to a Cu insertion layer in Gd26.7(FeCo)73.3 (10 nm)/Cu(1-5 nm)/Py(3 nm) stack. We performed spin transfer torque ferromagnetic resonance (ST-FMR) measurements on microbars (6 ×12 μm2) to determine the magneto dynamical properties such as current induced DL and FL SOT efficiencies. Figure 1 (a) and (b) show the ST-FMR spectra in the frequency range of 10-15 GHz, and the corresponding linewidth vs. frequency plot of Gd26.7(FeCo)73.3 (10 nm)/Cu(4 nm)/Py (3 nm); (c) and (d) show the Cu thickness dependent SOT efficiencies at f=8 GHz. The DL-SOT efficiency is found to be maximum, θDL~ 20%, at Cu (2 nm) followed by a decreasing trend at higher Cu thicknesses. However, FL-SOT efficiency shows a minimum, θFL~ 10%(-7%), up to Cu (2 nm) followed by ~-53%(48%) at Cu (5 nm) for +ve(-ve) direction of applied magnetic field. The larger value of θFL at higher Cu thickness will be useful for ultrafast current induced magnetization switching as seen in other ferrimagnetic systems. 
**References**
1. H. Mazraati et al., Low operational current spin Hall nanooscillators based on NiFe/W bilayers, Appl. Phys. Lett. 109, 242402 (2016).
2. H. Fulara et al., Spin-orbit torque–driven propagating spin waves, Sci. Adv. 5, eaax8467 (2019).
3. M. Zahedinejad et al., Two-dimensional mutually synchronized spin Hall nano-oscillator arrays for neuromorphic computing. Nat. Nanotechnol. 15, 47–52 (2020).
4. K. Garello et al., Ultrafast magnetization switching by spin-orbit torques, Appl. Phys. Lett. 105, 212402 (2014).
5. M. Cubukcu et al., Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction, Appl. Phys. Lett. 104, 042406 (2014).
6. D. Céspedes-Berrocal et al., Current-induced spin torques on single GdFeCo magnetic layers, Adv. Mater., 33, 2007047(2021).
7. R. Mishra et al., Anomalous Current-Induced Spin Torques in Ferrimagnets near Compensation, Phys. Rev. Lett. 118, 167201 (2017). 
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Tunable spin orbit torques in Ferrimagnet/Ferromagnetic heterostructures

We study the current-induced spin-orbit torque (SOT) switching and out-of-plane (OOP) effective field in a CuPt/CoPt heterostructure with interface oxidation. By introducing the oxidized copper at the interface, we found their switching abilities show remarkable improvement which is attributed to an unconventional OOP effective field. The OOP effective field is three times stronger than that without oxide treatment. Our observation identified the important role of the interface oxidation in the SOT process of CuPt/CoPt heterostructure.
The spin current can trigger a torque in ferromagnetic (FM) layer to electrically manipulate the magnetization. It is promise for an Magnetoresistive random-access memory (MRAM) device due to its endurance and speed [1-3]. To efficiently manipulate the magnetism in MRAM, the key point is to increase the spin accumulation in ferromagnetism (FM). In additiona, for traditional SOT devices, the external magnetic field is required to break the symmetry. Thus, the field-free switching has attracted attention.
We believe there could be a different path to enhance the field-free magnetization switching from material perspective. Previously, we studied the symmetry dependent field-free SOT switching in a CuPt/CoPt heterostructure [4]. The intrinsic broken mirror symmetry related SOT process is also reported in WTe2 [5]. The L11 CuPt deposited on SrTiO3 (111) substrate possesses a 3-fold symmetry, as shown in figure 1. The field-free switching emerges when the current is injected along the low symmetry axes ([1-10] and the other two equivalent axes).
In this work, we show the 3-fold symmetry unconventional out-of-plane torque is from the CuPt and it can be manipulated by the oxidation at the surface. Comparing to unoxidized sample, the oxidized sample approve a much larger switching ratio, since the large out-of-plane torque as the figure 2 shown. Regarding the oxidation degree of the copper is controllable by the time of oxidation treatment, thus a tuneable and efficient MRAM based on SOT induced magnetization switching is promised. 
**References** [1] K. Garello et al., 2018 IEEE Symposium on VLSI Circuits., p.81-82 (2018).
[2] F. Oboril, R. Bishnoi, M. Ebrahimi and M. B. Tahoori, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems., Vol. 34.3, p.367-380 (2015).
[3] G. Prenat et al., IEEE Transactions on Multi-Scale Computing Systems., Vol. 2.1, p.49-60 (2016).
[4] L. Liu et al., Nat. Nanotechnol., Vol. 16.3, p.277-282 (2021).
[5] MacNeill, D., Stiehl, G., Guimaraes, M. et al., Nature Phys., Vol. 13, p.300–305 (2017).
 
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Unconventional spin orbital torque enhanced magnetization switching by interface oxidation in CuPt/CoPt bilayer

Magnetic-tunnel-junction-based hard disk drive read-heads have been highly successful. They face pressing current challenges, however, due to high resistance-area product, which leads to impedance-mismatch-driven signal-to-noise issues as scaling continues [1]. Alternative all-metal spintronic devices are thus of high interest, including spin accumulation sensors based on non-local spin valves (NLSVs) [2]. Due to low output signals in such devices, and also for fundamental research, it is highly desired to improve the spin signal in metallic NLSVs. As this spin signal is essentially proportional to the square of the current spin polarization, α [3], we have explored integration of high-spin-polarization Co1-xFex alloy ferromagnetic injectors/detectors into NLSVs. Co1-xFex alloys are known to display a peak in α at x ≈ 0.25 and have been employed in other spintronic devices [4,5]. Otherwise identical Al-based NLSVs were fabricated with either conventional Co or Co75Fe25 ferromagnetic injectors/detectors via single-shot ultrahigh vacuum evaporation into electron-beam-lithographic masks (Fig 1, inset). X-ray and spectroscopic characterization indicates site-disordered BCC Co75Fe25 films. Comparing Co75Fe25 and Co, the non-local spin signal (ΔRNL) increases by factors of 3 and 4, respectively, at 275 and 5 K (Fig. 1), confirming significant enhancement. Full analysis of the temperature and injector/detector separation dependence reveal α values of ~60%, with a strikingly weak temperature dependence (Fig. 2). We thus establish a facile route to ~2-fold enhancement of spin polarization over conventional ferromagnets used in NLSVs (Fig. 2), thereby inducing ~4-fold enhancement in spin signal, of interest for both applied and fundamental purposes. This work is supported by the NSF and the Advanced Storage Research Consortium. 
**References** [1] T. Nakatani, Z. Gao, and K. Hono, MRS Bull., Vol. 43, p. 106 (2018) [2] H. Takagishi, K. Yamada, and H. Iwasaki, IEEE Trans. Mag., Vol. 46, p. 2086 (2010) [3] S. Takahashi, and S. Maekawa, PRB, Vol. 67(5), p. 052409 (2003) [4] D. J. Monsma, and S. S. P. Parkin. Appl. Phys. Lett., Vol. 77(5), p. 720 (2000) [5] S. V. Karthik, T. M. Nakatani, A. Rajanikanth, J. Appl. Phys., Vol. 105(7), p. 07C916 (2009) 
 
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Enhanced Spin Signal in Metallic Non Local Spin Valves with Highly

We present spin transport studies on a low-field, room-temperature magnetoelectric multiferroic polycrystalline Sr3Co2Fe24O41|Pt heterostructure wherein a highly tunable transverse conical magnetic phase is responsible for static and dynamic magnetoelectric coupling [1, 2]. We measured angular dependence of spin Hall magnetoresistance (SMR) at constant magnetic fields (H) in the range of 50 to 100 kOe. Application of field below the critical value (Hc1 ≈ 2.5 kOe), yielded negative SMR and the H-evolution of normalized SMR (△R/R0 × 100 %) exhibited a negative gradient. Further, an increase in the H resulted in the positive slope of △R/R0 × 100 % Vs. H and later at higher H around 14 kOe, a crossover from negative to positive SMR was observed. We employed a simple model for estimating the equilibrium magnetic configuration and computed the SMR modulation at various values of H. We argue that the tilting of the cone is dominant and in turn responsible for the observed nature of SMR below 2.5 kOe (Fig.1) while, the closing of the cone-angle is pronounced at higher fields causing a reversal in sign of the SMR from negative to positive (Fig.2). Importantly, SMR experiments revealed that a change in the helicity with a reversal of the magnetic field has no influence on the observed SMR. Longitudinal spin Seebeck effect (LSSE) signal was measured to be ≈ 500 nV at 280 K, under application of thermal gradient, △T = 23 K and field, 60 kOe. The observed LSSE signal, originating from pure magnon spin current, showed a similar H-dependent behavior as that of the magnetization of Sr3Co2Fe24O41. Our detailed spin transport studies on polycrystalline Sr3Co2Fe24O41|Pt heterostructure demonstrate high tunability of the amplitude and the sign of the SMR, highlighting its potential for novel spintronic devices such as SMR-based spin valves [3] and voltage-controlled spin transport devices. 
**References** [1] Y. Kitagawa, Y. Hiraoka, T. Honda, Nat. Mater., Vol. 9, p. 797 (2010)
[2] H. Ueda, Y. Tanaka, Y. Wakabayash, Phys. Rev. B, Vol. 100, p. 094444 (2019)
[3] Y.-T. Chen, S. Takahashi, H. Nakayama, Phys. Rev. B, Vol. 87, p. 144411 (2013) 
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Highly tunable spin Hall magnetoresistance in room temperature magnetoelectric multiferroic, Sr3Co2Fe24O41|Pt hybrids

In the post-Moore era, spintronic is one of the key technologies to break the bottleneck of high energy consumption of electronic devices1. However, as the process node
moves on, conventional ferromagnet-based spintronic devices meet the superparamagnetic size limit. Under such circumstance, perpendicular synthetic antiferromagnets with high
scalability and readability, strong immunity to external field and ultrafast dynamics, become a competitive choice for the next generation spintronics memory and logic devices2. Here, we propose a strategy to energy efficiently operate their magnetic order by spin orbit torque (SOT) under zero external field through the introduction of interlayer Dzyaloshinskii–Moriya interaction (DMI)3,4. By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Compared with previous field-free switching solutions, the performance of SOT device is well preserved. Our work pave the way for a wide range of potential high performance SOT devices5. 
**References** 
1 Z. Guo, J. Yin, Y. Bai et al., Proceedings of the IEEE., vol.109, p.8, (2021)
2 R. A. Duine, K. J. Lee, S. S. P. Parkin, M. D. Stiles, Nature Physics., Vol.14, p.217–219 (2018).
3 D. Han, K Lee, J Hanke et.al., Nature Materials., Vol.18, p.703–708 (2019)
4 A. Fernández-Pacheco, et al., Nature Materials., Vol.18, p.679–684 (2019).
5 Z. Wang, P. LI, Y. Yao et al., https://arxiv.org/abs/2205.04740, (2022) 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/377f489a894bf078aadba05a26cdde29.png) 
Schematic illustration of SAF field-free SOT switching through interlayer DMI. (A-D) Spin textures' evolution with time during the application of a SOT current pulse along -x. (E) A
sketch of the experimental setup where the switching mechanism under a domain nucleation and propagation regime is indicated. The probe laser is used to detect the MOKE signal in our
experiment. 
![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/7e7d043248771b0807a14e84b77ecab4.png) 
Field-free SOT switching detected by optical Kerr measurement. (A) Normalized p-MOKE signal of the studied film. (B) Kerr image after the application of a current pulse. The switching
area is counted from the composite image below. (C) Summarization of current induced switching behavior as a function of azimuthal direction.

Field free spin

Magnetic skyrmions are topological structures in magnetic materials such as ferromagnets (FMs) and antiferromagnets (AFMs). They are expected to become promising candidates of the logic gates in the next generation. Among them, the skyrmions in the FMs have been studied extensively. However, there exists main obstacle such as the skyrmion Hall effect when making the logic gates using skyrmions in the FMs. Recently, the skyrmions in the AFMs have been proposed in order to overcome the main obstacle. Moreover, the skyrmions in the AFMs move much faster than the skyrmions in the FMs. Therefore, it is very beneficial to make the logic gates based on the skyrmions in the AFMs. However, the logic gates based on the skyrmions in the AFMs have not been well studied. In this study, we propose the logic gates based on the skyrmions in the AFMs. We assume KMnF3 thin films on Pt as the AFMs [1-3]. Figures 1 and 2 show the micromagnetic simulation results of the logic AND gate for the input combinations (1, 0) and (1, 1), respectively. The black circles represent the input and the output positions of the logic gate. The black arrows represent the elapse of time. The existence or the non-existence of a skyrmion represents one bit of "1" or "0", respectively. As shown in Figs. 1 and 2, we can obtain the outputs 0 and 1 for input combinations (1, 0) and (1, 1), respectively. Similarly, we can obtain the outputs 0 for the input combinations (0, 0), (0,1). It is found that the antiferromagnetic systems in Figs. 1 and 2 act as the logic AND gates. Therefore, we have been able to realize the logic AND gate using the skyrmions in the AFMs. In our presentation, we are going to discuss the micromagnetic simulation results of not only "the logic AND gate" but also both "the logic OR gate" and "the logic NOT gate". Moreover, we are going to discuss how to transfer the output of one logic gate to the input of another logic gate. We consider that this study would be useful for making the logic gates using the skyrmions in the AFMs. 

**References** 
J. Barker and O. A. Tretiakov, Phys. Rev. Appl 116, 147203 (2016). 
N. Bindal, C. A. C. Ian, W. S. Lew, and B. K. Kaushik, Nanotechnol. 32, 215204 (2021). 
X. Zhang, Y. Zhou, and M. Ezawa, Sci. Rep. 6, 24795 (2016). 

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Fig. 1 The micromagnetic simulation results of the logic AND gate for the input combination (1, 0). 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/12038a4fbdeb62e4cefae3a0a735f21d.png) 

Fig. 2 The micromagnetic simulation results of the logic AND gate for the input combination (1, 1).

Theoretical Consideration of Logic Gates Based on Skyrmions in Antiferromagnets

The development of dual phase soft magnetic laminate for advanced electric machines at General Electric is summarized, including alloy development, properties, manufacturing trials, prototype experience, potential applications, and future material development. Dual phase soft magnetic laminates provide the flexibility to tune magnetic/non-magnetic state at the desired locations, using solution nitriding treatment with protective mask/coating. This enabling material technology benefits electric machine performance by reducing flux leakage in the laminates. It also decouples electromagnetic and mechanical design, which opens up the design space for advanced electric machines. Magnetic and mechanical properties of dual phase laminates were compared to commercial FeSi and FeCo soft magnetic laminates. Driven by the market needs for high power density and high-speed electric machines, a synchronous reluctance (SynRel) machine without permanent magnets and an interior permanent magnet machine using dual phase soft magnetic laminates were assessed in machine electromagnetic performance as well as rotor stress analysis by finite element simulation. Successful prototype build and testing further retired manufacturing risks and advanced the technology maturity level. Future material development with higher mechanical strength, higher saturation magnetization, higher permeability, and lower loss are highly desired for ground and air transportation electrification. 
**References:** 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/46e620f4bd7ba04d15e62e86fe52c5db.png) 
Figure 1. Dual phase laminate processing route for motor prototype.

Development of Dual Phase Soft Magnetic Laminate for Advanced Electric Machines

Ferrimagnets composed of two or multi antiferromagnetically coupled magnetic sublattices have attracted much attention recently due to the easily controlled and detected net magnetization and a fast magnetic dynamic behavior [1]. Especially, ferrimagnetic thin films with perpendicular magnetic anisotropy (PMA) show great potential for high-density spintronics devices [2]. Currently, most of work focus on the rare earth-transition metal ferrimagnetic alloys, such as GdFeCo and TbCo. However, the magnetization of these materials is sensitive to the temperature and composition [3]. The antiperovskite Mn4N compound is a rare-earth-free ferrimagnet showing a PMA, high thermal stability, high spin polarization and low saturation magnetization which make it promising for practical spintronics devices [4]. 
For the crystalline structure of Mn4N compound, Mn atoms occupy the corners (MnA) and face-centers (MnB) of the cubic unit cell, respectively, while N atom is located at the body center, as shown in Fig. 1(a). The magnetic moment of MnA and MnB are antiferromagnetically coupled with a high Curie temperature, 740 K. PMA in Mn4N thin films had been observed by epitaxially depositing it on the MgO substrate. However, the large lattice mismatch between Mn4N and MgO, −6%, induces a misfit dislocation of Mn4N resulting in a poor PMA. In this work, by inserting a thin Pd buffer layer with a very close lattice constant of Mn4N, we prepared the stacks MgO(substrate)/Pd(t = 0, 2 and 8 nm)/Mn4N(80 nm)/Ta(3 nm). We systematically studied the effect of Pd buffer layer on the crystalline structure and magnetization of Mn4N thin films. With inserting a Pd buffer layer, a good quality of crystalline structure can be formed which significantly improves the PMA, as shown in Fig. 1(b). 
**References:** [1] S. K. Kim et al., Nat. Mater. 21, 24–34 (2022) 
[2] B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017) 
[3] H. Bai et al., Adv. Electron. Mater. 8, 2100772 (2022) 
[4] Z. Zhang and W. Mi, J. Phys. D: Appl. Phys. 55 013001 (2022) 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/8c0e2564383234f67714a1850714808a.png) 
Fig. 1: (a) Crystalline structure of Mn4N. (b) Pd thickness dependence of magnetization of Mn4N under an external out-of-plane magnetic field.

Perpendicular Magnetic Anisotropy of Ferrimagnetic Mn4N Thin Film Improved by the Pd Buffer Layer

The family of 2D compounds has grown almost exponentially since the discovery of graphene and so too the rapid exploration of their vast range of electronic properties. Some family members include superconductors, Mott insulators with charge-density waves, semimetals with topological properties, and transition metal dichalcogenides with spin-valley coupling1. Among several compounds, the realization of long-range ferromagnetic order in van der Waals (vdW) layered materials has been elusive till very recently. Long searched but only now discovered 2D magnets are one of the select group of materials that retain or impart strongly spin correlated properties at the limit of atomic layer thickness. In this presentation I will discuss how different layered compounds (e.g., CrX3 (X=F, Cl, Br, I), VI3, MnPS3, Fe3GeTe2, FePS3, CrGeTe3) can provide new playgrounds for exploration of spin correlations involving quantum-effects, topological spin-excitations and higher-order exchange interactions. I will show that this new generation of vdW magnets can help to revolutionize several technological domain wall applications from sensing to data storage, which can lead to new magnetic, magnetoelectric and magneto-optic applications in industry2,3,4,5. Moreover, I will discuss some challenges at the forefront of 2D vdW magnets and new opportunities to understand fundamental problems. 

**References:** 
1. Q. Wang et al. ACS Nano 16, 6960 (2022). 
2. D. Wahab et al. Adv. Mater. 33, 2004138 (2021). 
3. D. Wahab et al. Appl. Phys. Rev. 8, 041411 (2021). 
4. M. Alliati et al. npj Comput. Mater. 8, 3 (2022). 
5. J. Macy et al., Appl. Phys. Rev. 8, 041401 (2021). 

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