Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/4by7-9031

technical paper

MMM 2022

November 07, 2022

Minneapolis, United States

Spintronic Physical Unclonable Functions in an Exchange biased Trilayer Structure

Physically unclonable function (PUF), harnessing inherent stochastic variation of physical properties originating from the manufacturing process, is a crucial part of hardware security primitives 1. PUF offers more robust information security than the conventional software-based ones. To date, owing to the compatibility to complementary-metal-oxide-semiconductor (CMOS) technology, silicon-based PUFs have been widely investigated 2. However, their reliability with environmental fluctuations and susceptibility to external machine learning attacks are yet to be ascertained. Recently, graphene- or memristor-based PUFs were proposed and found out to be effective in resolving such issues 3,4. However, their analog output inevitably involves additional circuit modules or analogue-to-digital converter, requiring significant power consumption and area overhead. Here, we demonstrate highly reliable spintronic PUFs based on field-free spin-orbit torque (SOT) switching in an IrMn/CoFeB/Ta/CoFeB structure. We show that the switching polarity of the perpendicular magnetization of the top CoFeB can be randomly distributed by manipulating the exchange bias directions of the bottom IrMn/CoFeB. Figure 1 shows stochastic field-free SOT switching polarity after the randomization process of the bottom exchange-biased layers. Ideal PUF properties are found in the spintronic PUFs: high entropy close to unity, uniqueness with an inter-Hamming distance of 0.5 and reconfigurability. Furthermore, the spintronic PUFs generate binary digital outputs, potentially eliminating the need for analog-to-digital converters and error correction codes. We observed a zero bit-error rate in 5×104 repetitive measurements which demonstrates the high reliability. Due to the exchange-biased bottom layers, robustness against external magnetic fields are secured. These, when integrated with magnetic random-access memory in particular, are expected to promote scalable and energy-efficient hardware information security

References 1 Y. Gao, S. F. Al-Sarawi, D. Abbott, Nat. Electron., 3, 81 (2020) 2 J. L. Zhang, G. Qu, Y. Q. Lv, Q. Zhou, J. Comput. Sci. Technol., 29, 664 (2014) 3 A. Dodda, S. Subbulakshmi Radhakrishnan, S. Das, Nat. Electron., 4, 364 (2021) 4 R. A. John, N. Shah, N. Mathews, Nat. Commun., 12, 3681 (2021)


Transcript English (automatic)

Next from MMM 2022

Magnetic nanoprecipitates and interfacial spin disorder in zero field
technical paper

Magnetic nanoprecipitates and interfacial spin disorder in zero field

MMM 2022

+5Mathias Bersweiler
Mathias Bersweiler and 7 other authors

07 November 2022

Stay up to date with the latest Underline news!

Select topic of interest (you can select more than one)


  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved