VIDEO DOI: https://doi.org/10.48448/50nd-ps73

technical paper

DRC 2022

May 27, 2022

United States

Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM

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Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell Operation
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Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell Operation

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