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poster

IRPS 2022

March 28, 2021

Dallas, TX, United States

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer

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Next from IRPS 2022

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs
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Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs

IRPS 2022

Tsunenobu Kimoto
Tsunenobu Kimoto

28 March 2021

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