France

The climate crisis calls for urgent actions towards sustainability as an integral component of businesses and regulations. With its large and growing environmental footprint, the Information and Communication Technology sector is arguably a large part of the problem, but also a part of the solution. Fabrication of integrated circuits is an energy and resource intensive process and the drive towards higher performance and increased functionality increases the process complexity dramatically from node to node. Traditionally, the improvement between technology nodes is evaluated using Power, Performance, Area and Cost (PPAC) metrics in a Design Technology Co-Optimization (DTCO) completely neglecting sustainability. However, this established framework provides an opportunity to do early sustainability assessments of future technologies all the way from material sourcing and fabrication to end of life. To demonstrate this approach, we evaluate the environmental impact, more specifically the energy and ultra-pure water (UPW) consumption as well as the greenhouse gas (GHG) emissions from manufacturing logic technology from past to future nodes. Our analysis shows a significant increase in the use of electricity (x3.46) and UPW (x2.3), as well as GHG emissions (x2.5) per wafer from iN28 to iN3. Together with improvements in performance and reduction in standard cell area, the environmental metrics normalized per transistor still reduce but the improvement is found to saturate at the most advanced nodes.

ESSCIRC ESSDERC Educational Events

The environmental footprint of logic CMOS technologies

lcia

sustainability

cmos

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021 
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021 
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021 
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021 
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

ESSCIRC ESSDERC 2021

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021 
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021 
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021 
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021 
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Please register for the ESSCIRC/ESSDERC Educational Events to join the event.

The Educational Events of ESSCIRC ESSDERC 2021. 

It is well known that, over a wide range of wavelengths, a graphene sheet absorbs 2.3% of the light passing through it. This value is directly related to the fine structure constant, which can be interpreted by the very particular band structure of this material. Remarkably, it has been shown experimentally that thin InAs films exhibit an aborption spectrum characterized by steps that can also be related to the fine structure constant. We present numerical simulations (TB, KP) showing that this phenomenon is very robust and is obtained for a very large number of semiconductor materials. We complement this work with analytical calculations to understand the physical origin of this behavior. The comparison with graphene is discussed.

Optical absorption quantization in nanolayers of semiconductors

Halide perovskite semiconductors, either fully inorganic or hybrid organic-inorganic, have attracted a lot of interest since 2012 owing to their excellent performances for photovoltaic applications. These low-cost semiconductors have attractive intrinsic physical properties for optoelectronics, including direct band gaps, small effective masses, large carrier mobilities, sizeable optical absorption and quantum yield for luminescence. Available tools, including commercial codes, for semiconductor device simulations provide reasonable descriptions of the perovskite device characteristics under operation. However such simulations are still hardly predictive. The aim of the presentation will be to give an overview of the current challenges for such simulations by comparison to classical semiconductors, including 1) the diversity of compositions, nanostructure dimensionalities, crystallographic structures or processing of the perovskite materials, 2) the unusual physical properties of this new class of soft and ionic semiconductors, 3) the primary importance and complexity of the interfaces in perovskite-based thin film heterostructures

Perovskite semiconductors: current challenges for predictive atomistic and device simulation.

Computer simulations are well established to support experimental R&D in OLED and OPV technology: On the molecular scale, quantum chemistry tools such as DFT are used to compute molecular properties such as HOMO or levels or excitation energies, while continuum models, e.g. drift diffusion, are efficient tools for virtual design on the device level. 
However, the application of quantum chemistry methods is limited to a few molecules at best, prohibiting the direct computation of material properties in thin films and their impact on device performance. Continuum models on the other hand rely on parametric models which often need to be calibrated with experiments due to the lack of predictive microscopic models. 
We bridge this gap of scales using a multiscale workflow that connects fundamental chemistry and device design: Using a physical vapor deposition protocol with customized force-fields and a quantum embedding scheme we generate digital twins of OLED layers and devices. For these digital twins we compute electrical properties such as electron affinity, ionization potential and permittivity. Using a kinetic Monte-Carlo protocol we conduct virtual experiments on the digital twins to simulate charge carrier and exciton dynamics in OLED devices to e.g. compute charge carrier mobility or device efficiency. These microscopic simulations generate a fundamental understanding on how molecular properties trigger and balance microscopic processes, thereby enabling materials and device designers to systematically eliminate bottlenecks in OLED performance. Further, the multiscale workflow can be used to parametrize continuum models from first principles, facilitating full virtual design.

Connecting quantum chemistry and device level simulations via multiscale simulation workflows

This tutorial will focus on how to determine the dielectric, electronic transport, and magnetic properties of two-dimensional (2D) materials from first principles using density functional theory (DFT). We will exhibit a simple yet robust methodology to extract the dielectric constant of a monolayer/few-layer structures from a DFT calculation. We will illustrate the dielectric constant methodology by determining the low- and high-frequency dielectric constant of hexagonal boron-nitride, transition metal dichalcogenides (TMDs), and novel unexplored dielectrics. Next, we will show how our open-source Plane-wave Electron TRAnsport (PETRA) quantum transport code can be used to simulate transport in nanowires and nanoribbons. Finally, we will show how from DFT calculations for various magnetic configurations, the exchange interaction can be described as a function of concentration. Once the exchange interaction description is determined, Monte Carlo simulations can be performed to determine the magnetic order and the Curie/Néel temperature, the magnetic properties of layered materials can be determined. We will illustrate the approach using monolayer MoSe2 and show that five different magnetic orderings in 2D materials are revealed.

Computing Dielectric, Electronic Transport, and Magnetic Properties of Two-Dimensional Materials from First Principles

/Users/paologargini/Documents/MS Office PP/2021/21 EUROPE/2021_-9_06_ESSDERC_IoT/2021_09_06_Paolo_Abstract.pdf

IoT: Promises, Challenges and Solutions

The presentation provides a short introduction to the sustainability issues related to minerals and, mainly, metals needed by the ICT industry. It contextualizes the ICT driven demand in a broader outlook for the coming decades, driven by demography, the rise of the global middle-class, urbanization, and the transition towards a low-carbon global economy.

ICT and mineral raw materials: sustainability issues

Can we cope with the upcoming massive deployment of IoT within environmental limits?

Europe is facing one of the biggest challenges of its history: that of preserving a viable environment for the decades to come. On human consciousness of its environmental impact, Prof Bartlet says “The greatest shortcoming of the human race is our inability to understand the exponential function” [1]. ICT was, and still is, driven by exponential functions (Moore’s law, Ops/ Watt, data exchanges volume worldwide, ...). But each exponential has its sustainability limits which are often reached sooner than expected. In ICT history to date, when those limits are reached, they are overcome by a technology breakthrough. By way of example, there was the CMOS (Complementary Metal-Oxide- Semiconductor) technology, a product of laboratory curiosity of the 1980s when bipolar transistor power consumption was too high. New integrated system (multi-core processor) and device (SOI, FinFET,...) architectures entered the market when energy consumption limits were reached by CPUs; CMOS is still today the much cheaper and reliably power efficient technology for the development and growth of the Internet of Things. Awareness of the rapid proliferation of wirelessly connected objects around us gives rise to questions and fears among the public. There is a need for more transparency on the environmental footprint of ICT and a need to establish an ambitious roadmap, at research and industrial levels, for moving into a virtuous cycle of eco- innovation.

In this presentation, we propose pathways to maintain or even reduce global (exponential) use of energy and materials for ICT.

HiPEAC Vision 2021: key recommendations and the importance of sustainability

Electronics is increasingly introduced in our society and the Internet-of-Things (IoT) contribute extensively to this trend. Indeed, their number is expected to boom in the next years (+10-30% per year). Although this could enable positive effects both on our society and our environment through optimization and monitoring, the massive deployment of IoT will come together with an undeniable environmental burden which is often overlooked. As it has been shown that the main environmental impacts of electronics do not reside necessary in the use phase but rather in the raw-material extraction and production phases (which is especially true for battery-powered devices), life cycle approaches are needed to better understand the impacts of the IoT in order to avoid worsening the current environmental situation.
In this talk, we first present a macroscopic analysis focusing mainly on the energy and carbon footprint of ICT sub-sectors. It shows that the following of exponential trends such as Moore’s law will very unlikely lead to an absolute decrease of GHG emissions if sobriety is not considered together with efficiency improvements. Then, we propose a framework based on hardware profiles to explore the environmental impacts of the production of IoT edge devices and discuss the coherence of the expected massive IoT deployment with respect to the Paris Agreement objectives. We also present eco-design use cases for IoT devices that are being developed in our labs, focusing on the environmental impacts of microelectronics pressure sensors and water quality monitoring applications. In order to showcase how LCA can be used to support the development of new eco-design guidelines in the electronics sector, we study the interest of new design paradigms such as hybrid electronics. Finally, we call engineers to integrate systemic considerations when developing technologies, and we offer some concrete perspectives and tools that can be applied by engineers to support the dissemination of more sustainable and appropriate electronics.

Towards a Green and Sustainable Digital Infrastructure: challenges and opportunities

This presentation motivates neuromorphic computing and memristive devices as a power efficient alternative for applications in artificial intelligence. It also covers recent device-level results of threshold and bipolar memristive switching in two-dimensional materials. finally, it provides an overview of the large scale Clusters4Future initiative "NeuroSys" in Germany, that is expected to launch in the Aachen region in Germany in January 2022.

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Optical absorption quantization in nanolayers of semiconductors

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A 4-31GHz Direct-Conversion Receiver Employing Frequency-Translated Feedback

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