France

Brain-machine interfaces (BMIS) of the future will be used to treat neurological disorders for which a cure does not exist yet. For this futuristic view to become a reality, we must overcome many technological challenges. A major goal is to increase the number of neurons that we can simultaneously interact with. To do so, future systems will record from more than a thousand channels at the same time. These systems will create a massive amount of raw data that needs to be compressed on the implant to lower the power consumption of the wireless link. As custom signal specifications for BMI applications become clearer and are diverging from those needed for basic neuroscience, there is an opportunity for application-specific lossy compression that improves further the power efficiency of these implants. In this workshop, we will cover the basic aspects of compression for BMIs and describe two different compression schemes for a motor BMI and an artificial retina.

ESSCIRC ESSDERC Educational Events

Near-sensor compression in high-bandwidth brain-computer interface

neural interface

brain-machine interface

compression

ICPR 2020 is the premier international conference on Pattern Recognition, gathering leading researchers from around the world to present their latest achievements in Pattern Analysis and Recognition, applied Artificial Intelligence and Machine Learning. The topic of the year is " Putting Artificial intelligence to work on Patterns". 
For the first time, ICPR has employed a two-round review process similar to journal submissions, with new papers allowed to be submitted in either the first or second round and papers submitted in the first round and not accepted allowed to be revised and re-submitted for second round review. 

In this edition of the **ICPR 2020** Conference, there are 1407 Oral/Poster presentations organized in five Tracks: 
- Artificial Intelligence, Machine Learning for Pattern Analysis; 
- Biometrics, Human Analysis and Behavior Understanding; Computer Vision, Robotics and Intelligent Systems; 
- Document and Media Analysis; and 
- Image and Signal Processing. 

The **ICPR 2020** Main Conference program also includes 7 Keynotes from prominent world-renowned scientists, 8 Tutorials, 28 Demos, 8 Challenges, 2 Panels, as well as an Industry/Sponsor Exhibition. In addition, 41 Workshops on a range of important current and emerging research topics complete the ICPR 2020 program. 


ICPR 2020

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Please register for the ESSCIRC/ESSDERC Educational Events to join the event.

The Educational Events of ESSCIRC ESSDERC 2021. 

The novel photo-acoustic CO2 sensor SCD4x launched by Sensirion in early 2021 represents a major innovation step in the miniaturization and cost-reduction of selective and long-term stable CO2 sensor technology. Being the first optical CO2 sensor compatible with surface-mounting technology and made for reflow soldering, the sensor allows for a broader adoption of indoor air quality monitoring both in residential air conditioning as well as internet of things devices. In my talk I will address how MEMS and CMOS technology combined with tailored assembly and packaging designs has enabled shrinking a measurement system previously reserved for scientific laboratories to an SMD component of the size smaller than a sugar cube.

Breaking the size barrier in CO2 sensing: the photo-acoustic CO2 sensor “SCD4x”

In recent years, an enormous surge of works is being carried out on developing new methods for magnetic devices for various kinds of healthcare applications. Miniaturising magnetic sensors offer the prospect to replace the bulky laboratory instruments with easy-to-use clinical platforms ranging from portable lab-on-a-chip diagnostics to wearable and implantable devices. It would bring down the cost, size and out-of-hospital use by several orders of magnitude. Implementation of such magnetic sensing microsystems using traditional CMOS technology is inefficient in terms of area, sensitivity and signal to noise ratio. Such inefficiencies have driven a significant effort to investigate the development of beyond-CMOS devices. Integration of magnetoresistive devices, e.g. Tunnelling Magnetoresistive (TMR), with CMOS technology provides an opportunity to produce and optimise powerful and low-power devices for low biomagnetic field applications. Such heterogeneously structure combining the CMOS circuitry interface and non-CMOS sensors higher performance electronics for detecting pico-Tesla magnetic field. 
The talk will introduce our research at the Microelectronics Lab (www.melabresearch.com) at the University of Glasgow on integrated electronic circuits and sensors with several different works addressing the development of architectures for the implementation of efficient biomedical wearable and implantable technologies. It presents findings and trends in magnetic sensing devices, including:
(i) Tunnelling magnetoresistive (TMR) sensors and circuit Interfaces for malaria parasite detection
(ii) Integrated micro–Nuclear Magnetic Resonance (micro-NMR) for point of care diagnostics
(iii) Implantable Magnetomyography (MMG) with magnetoelectric (ME) and TMR sensors 
(iv) Spintronic sensors based on Magnetic Tunnel Junction for wearable eye movements monitoring


Principles of Magnetic Sensing in Medical Microsystems

In less than a decade, optical sensing has become a key topic because of the growing potential in spectroscopy, chemical and biomolecular sensing, security and industry applications. This talk presents recent results on the chip level integration of the building blocks for chemical detection.

Challenges and Opportunities in the Miniaturization of the Optical Sensing

Photoplethysmography (PPG) is a non-invasive optical recording method to measure a number of vital signs in a very unobtrusive manner. While PPG has been employed in a clinical setting already for a few decades, it has regained popularity in the last decade specifically for wearable health applications. This talk will discuss the latest-state-of-the-art on ASIC readout architectures for low-power, high performance PPG readout circuits.

Photoplethysmography (PPG) readout interface circuit design techniques

While InP heterojunction bipolar transistor technologies show continuous improvement in terms of RF performances, the accurate characterization of these THz transistors is crucial to assess the cut-off frequencies as well as to precisely extract and validate the device compact model, thus enabling millimeter and sub-millimeter-wave IC design. On-wafer measurements are particularly difficult beyond 110 GHz since unwanted parasitic effects become predominant and may mask the intrinsic behavior of the nanoscale device. A such high frequencies, two strategies may be adopted and combined in order to perform accurate on-wafer device measurements at submillimeter-wave frequencies: i) optimizing the test structures’ design in order to minimize the parasitics, ii) developping on-wafer calibration standards on the same substrate as the device to characterize. Coupled with electromagnetic simulation for the test structures design optimization and the measurement's validation, these strategies proved to be efficient for the characterization of InP passive devices up to 500 GHz and InP DHBT up to 330 GHz.

On-Wafer TRL Calibration Kit Design for InP Technologies Characterization Up To 500 GHz

To meet the prerequisites of monolithic indium phosphide based integrated terahertz (THz) technologies that are capable of achieving beyond-5G wireless communications system, a single computationally efficient circuit design tool is essential. Through the implementation of accurate and SPICE-compatible compact models and development of associated process design kits (PDK) for InP double heterojunction bipolar transistors (DHBTs), we demonstrate that next generations of cutting-edge high speed electronic systems will benefit from (i) dedicated parameter extraction procedure,(ii) validation of model parameter set against on-wafer high-frequency measurements and deembedding methods using dedicated test structures in the beyond 110 GHz range,(iii) extrapolation of key figures of merits to scaled device dimensions leveraging a scalable model card.

For the parameter extraction procedure, we investigate the bias, temperature, and frequency dependence of two III-V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multi-geometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacitances show very good scaling, thereby allowing the separation of intrinsic and peripheral effects. 

Since thermal management is more critical in III-V technologies compared to Si-based ones, especially from the reliability point of view, for a more accurate description of electrothermal effects in InP HBTs, a new scalable model for the thermal impedance of III-V DHBTs that has been developed based on the physics of heat diffusion within the HBT architecture. The heat flow through both the emitter metal layers and toward the substrate are taken into account for the model development. The model constitutes of individual thermal contributions of the different regions of the intrinsic device and metal layers. On-wafer low-frequency S-parameters measurements have been performed on several device geometries to study the device dynamic self-heating. The model has been validated against the measurements showing good accuracy and scalability. Time-domain pulse measurements have also been performed to correlate with the frequency domain S-parameter measurements. Moreover, accuracy of the scalable model card has been validated against measurements up to 330 GHz on the InP DHBTs leveraging on-wafer measurements on passive devices (open/short) up to 500 GHz, achieved through TRL calibration and E-M simulation of designed test-structures. Finally, prediction of future III-V HBT technologies figures-of-merit for scaled device dimensions of a state-of-the-art InP DHBT is performed by using the generated scalable model card.

Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunction Bipolar Transistors

The paper presents briefly the software used in the Ultimate projet for HiCuM/L2 compact model scalable parameter extraction. The video explains the software functionnalities and the basic theory beyond scalable physics based compact model parameter extraction. An example is given for junction capacitances with a demo of the software operation.

SMACH: a tool for bipolar model parameter extraction

In this presentation we discuss the design, implementation and measurements of Tb/s/channel optical communication circuits realized in III-V Lab InP DHBT process. Realizations using InGaAs- and GaAsSb-base devices will be presented and compared, from transistor to circuit performances.
The design flow is detailed with specific focus on key trade-offs to reach >3-4 Vpp output swings conjugated with >100 GHz analog bandwidth as well as circuits’ design for electro-optical systems with new transmission formats using innovative DSP algorithms allowing higher transmission rates and increased spectral efficiency, like m-ary pulse-amplitude modulation (m-PAM) or quadrature amplitude modulation (m-QAM) formats. We also present the design and measurements of digital multiplexing selector operation at record 212-GBd speed and its system implementation for intra data-center communications.


Recent advances in high-speed and large-swing integrated circuits implemented in InGaAs and GaAsSb InP DHBT for terabit-class optical communications

In this talk, power amplifier MMICs developed for emerging D-band (110-170 GHz) wireless communication links using InP DHBT technology will be presented. Power amplifiers designed for millimeter-wave frequencies in general suffer from low gain of the transistors and high loss in the interconnect structures. To complicate matters, it is foreseen that higher order modulation formats will be employed to enhance the spectral efficiency in future mm-wave wireless communication links and this dictates strict linearity requirements to the power amplifiers. 
The talk will describe circuit topologies able to exhaust the potential of the InP DHBT technology used and present a low-loss interconnect strategy suitable for the implementation of matching networks and power combining structures. The experimental results of implemented D-band power amplifier MMICs will be presented.

InP DHBT based Power Amplifiers for D-band (110 – 170 GHz) Wireless Communication Links

High data rate communications and high bandwidth communication and sensing systems demand for wideband MMIC operating over a bandwidth with excess of 100 GHz. This talk will introduce such MMICs and their design and characterization challenges. The talk will focus on the widest bandwidth and bandwidth limits as well as the achievable output power, noise figure and gain, as well as constant time delay versus frequency of operation. FBH has demonstrated > 150 GHz bandwidth with output power levels > 12 dBm and concurrent noise-figures of < 9 dB, which allow for robust wideband receive modules and high power transmit modules. Results will also be shown on signal switches and preliminary results on wideband mixers. Routes towards even large bandwidths will be discussed and improvement in output power will be outlined.

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Next from ESSCIRC ESSDERC Educational Events

Breaking the size barrier in CO2 sensing: the photo-acoustic CO2 sensor “SCD4x”

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Compact CNN Structure Learning by Knowledge Distillation

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